RU2518845C2 - Устройство для осаждения атомного слоя и способ загрузки устройства для осаждения атомного слоя - Google Patents

Устройство для осаждения атомного слоя и способ загрузки устройства для осаждения атомного слоя Download PDF

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RU2518845C2
RU2518845C2 RU2011106286/02A RU2011106286A RU2518845C2 RU 2518845 C2 RU2518845 C2 RU 2518845C2 RU 2011106286/02 A RU2011106286/02 A RU 2011106286/02A RU 2011106286 A RU2011106286 A RU 2011106286A RU 2518845 C2 RU2518845 C2 RU 2518845C2
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ald
loading
substrates
reaction chamber
batch
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RU2011106286/02A
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Russian (ru)
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RU2011106286A (ru
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Свен ЛИНДФОРС
Юха Аллан Кустаа-Адолф ПОУТИАЙНЕН
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Пикосан Ой
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Robotics (AREA)
RU2011106286/02A 2008-08-01 2009-07-07 Устройство для осаждения атомного слоя и способ загрузки устройства для осаждения атомного слоя RU2518845C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/221,268 US8282334B2 (en) 2008-08-01 2008-08-01 Atomic layer deposition apparatus and loading methods
US12/221,268 2008-08-01
PCT/FI2009/050616 WO2010012863A1 (en) 2008-08-01 2009-07-07 Atomic layer deposition apparatus and loading methods

Publications (2)

Publication Number Publication Date
RU2011106286A RU2011106286A (ru) 2012-09-10
RU2518845C2 true RU2518845C2 (ru) 2014-06-10

Family

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Family Applications (1)

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RU2011106286/02A RU2518845C2 (ru) 2008-08-01 2009-07-07 Устройство для осаждения атомного слоя и способ загрузки устройства для осаждения атомного слоя

Country Status (7)

Country Link
US (2) US8282334B2 (https=)
EP (1) EP2310553B1 (https=)
JP (1) JP5683463B2 (https=)
KR (1) KR101614026B1 (https=)
CN (1) CN102112655B (https=)
RU (1) RU2518845C2 (https=)
WO (1) WO2010012863A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2752059C1 (ru) * 2020-07-14 2021-07-22 Пикосан Ой Устройство для атомно-слоевого осаждения (ald)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
JP2010528567A (ja) * 2007-05-25 2010-08-19 インターデイジタル テクノロジー コーポレーション 無線通信におけるアクセスモビリティのためのプロトコルアーキテクチャ
US10041169B2 (en) 2008-05-27 2018-08-07 Picosun Oy System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor
US8282334B2 (en) 2008-08-01 2012-10-09 Picosun Oy Atomic layer deposition apparatus and loading methods
FI123487B (fi) * 2009-06-15 2013-05-31 Beneq Oy Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle
JP5885830B2 (ja) 2011-04-07 2016-03-16 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ プラズマ源を有する堆積反応炉
TWI461566B (zh) 2011-07-01 2014-11-21 Ind Tech Res Inst 鍍膜用噴灑頭以及鍍膜裝置
CN102354675A (zh) * 2011-11-02 2012-02-15 上海宏力半导体制造有限公司 晶圆垂直加工设备及方法
RU2600047C2 (ru) * 2012-03-23 2016-10-20 Пикосан Ой Способ и устройство для осаждения атомных слоев
CN102618848A (zh) * 2012-05-04 2012-08-01 嘉兴科民电子设备技术有限公司 一种立式原子层沉积设备
FR2993555B1 (fr) * 2012-07-19 2015-02-20 Herakles Installation d'infiltration chimique en phase vapeur a haute capacite de chargement
RU2620230C2 (ru) * 2012-11-23 2017-05-23 Пикосан Ой Способ загрузки подложки в реактор асо
CN105463406A (zh) * 2014-09-04 2016-04-06 沈阳拓荆科技有限公司 原子层沉积设备
US20190194809A1 (en) * 2016-09-16 2019-06-27 Picosun Oy Apparatus and methods for atomic layer deposition
JP6445603B2 (ja) * 2017-03-07 2018-12-26 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ Ａｌｄ反応炉における基板の装填
KR20190002415A (ko) * 2017-05-16 2019-01-08 어플라이드 머티어리얼스, 인코포레이티드 기판을 프로세싱하기 위한 장치, 기판을 프로세싱하기 위한 프로세싱 시스템 및 기판을 프로세싱하기 위한 장치를 서비싱하기 위한 방법
CN109333487A (zh) * 2018-11-28 2019-02-15 江苏晶成光学有限公司 一种单晶硅片成品存放架
FI130051B (en) * 2019-04-25 2023-01-13 Beneq Oy DEVICE AND METHOD
CN111676465A (zh) * 2020-07-15 2020-09-18 武汉华星光电半导体显示技术有限公司 Ald沉积装置及ald沉积方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6648974B1 (en) * 1999-02-12 2003-11-18 Lpe Spa Device and method for handling substrates by means of a self-leveling vacuum system in epitaxial induction
US20040065258A1 (en) * 2002-10-08 2004-04-08 Sandhu Gurtej S. Atomic layer deposition methods and atomic layer deposition tools
WO2006011169A1 (en) * 2004-07-30 2006-02-02 Lpe Spa Epitaxial reactor with susceptor controlled positioning
US20060156979A1 (en) * 2004-11-22 2006-07-20 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU954513A1 (ru) 1980-12-25 1982-08-30 Всесоюзный научно-исследовательский и проектный институт тугоплавких металлов и твердых сплавов Установка дл нанесени покрытий из газовой фазы
US4582720A (en) * 1982-09-20 1986-04-15 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for forming non-single-crystal layer
JPS61251118A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 化学気相成長処理方法
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
US20020064440A1 (en) * 1994-07-07 2002-05-30 Minoru Ikeda Production line constructing system
US5658028A (en) * 1996-02-02 1997-08-19 Micron Technology, Inc. Vertical wafer carrier handling apparatus
JPH09216180A (ja) 1996-02-08 1997-08-19 Hitachi Ltd 半導体ウェハカセット搬送システム
US5674039A (en) * 1996-07-12 1997-10-07 Fusion Systems Corporation System for transferring articles between controlled environments
US6413355B1 (en) * 1996-09-27 2002-07-02 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
US6050446A (en) * 1997-07-11 2000-04-18 Applied Materials, Inc. Pivoting lid assembly for a chamber
US6145397A (en) * 1998-10-01 2000-11-14 Applied Materials, Inc. Simple lift assist module
US6610150B1 (en) * 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
US6395101B1 (en) * 1999-10-08 2002-05-28 Semitool, Inc. Single semiconductor wafer processor
FI118474B (fi) * 1999-12-28 2007-11-30 Asm Int Laite ohutkalvojen valmistamiseksi
US6517634B2 (en) * 2000-02-28 2003-02-11 Applied Materials, Inc. Chemical vapor deposition chamber lid assembly
JP4211185B2 (ja) 2000-02-29 2009-01-21 株式会社デンソー Ｃｖｄ，ａｌｅ装置用ガラス基板収納治具
TW496907B (en) * 2000-04-14 2002-08-01 Asm Microchemistry Oy Method and apparatus of growing a thin film onto a substrate
US6585823B1 (en) * 2000-07-07 2003-07-01 Asm International, N.V. Atomic layer deposition
US6719851B1 (en) * 2000-09-26 2004-04-13 Applied Materials, Inc. Lid assembly for opening a process chamber lid and uses therefor
US6609632B2 (en) * 2001-01-17 2003-08-26 Simplus Systems Corporation Removable lid and floating pivot
US6682703B2 (en) * 2001-09-05 2004-01-27 Irm, Llc Parallel reaction devices
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
KR20030081144A (ko) * 2002-04-11 2003-10-17 가부시키가이샤 히다치 고쿠사이 덴키 종형 반도체 제조 장치
US7002134B2 (en) * 2003-05-09 2006-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Dryer lid/robot collision prevention system
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7654221B2 (en) * 2003-10-06 2010-02-02 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
KR100541559B1 (ko) * 2004-01-29 2006-01-11 삼성전자주식회사 글랜드부를 갖는 배치형 증착 장비
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
JPWO2006088082A1 (ja) * 2005-02-18 2008-07-03 三菱電機株式会社 マルチバンド無線通信方法および基地局
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US7798096B2 (en) * 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20080213479A1 (en) * 2007-02-16 2008-09-04 Tokyo Electron Limited SiCN film formation method and apparatus
US10041169B2 (en) 2008-05-27 2018-08-07 Picosun Oy System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor
US8282334B2 (en) 2008-08-01 2012-10-09 Picosun Oy Atomic layer deposition apparatus and loading methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6648974B1 (en) * 1999-02-12 2003-11-18 Lpe Spa Device and method for handling substrates by means of a self-leveling vacuum system in epitaxial induction
US20040065258A1 (en) * 2002-10-08 2004-04-08 Sandhu Gurtej S. Atomic layer deposition methods and atomic layer deposition tools
WO2006011169A1 (en) * 2004-07-30 2006-02-02 Lpe Spa Epitaxial reactor with susceptor controlled positioning
US20060156979A1 (en) * 2004-11-22 2006-07-20 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2752059C1 (ru) * 2020-07-14 2021-07-22 Пикосан Ой Устройство для атомно-слоевого осаждения (ald)

Also Published As

Publication number Publication date
KR20110041547A (ko) 2011-04-21
CN102112655A (zh) 2011-06-29
JP5683463B2 (ja) 2015-03-11
RU2011106286A (ru) 2012-09-10
JP2011530003A (ja) 2011-12-15
US20130029042A1 (en) 2013-01-31
KR101614026B1 (ko) 2016-04-20
US10011904B2 (en) 2018-07-03
EP2310553B1 (en) 2018-09-05
EP2310553A1 (en) 2011-04-20
WO2010012863A1 (en) 2010-02-04
CN102112655B (zh) 2014-05-07
US20100028122A1 (en) 2010-02-04
EP2310553A4 (en) 2011-12-28
US8282334B2 (en) 2012-10-09

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