CN105164310B - 用于在批量处理中处理两个或更多基板的装置 - Google Patents
用于在批量处理中处理两个或更多基板的装置 Download PDFInfo
- Publication number
- CN105164310B CN105164310B CN201480024683.2A CN201480024683A CN105164310B CN 105164310 B CN105164310 B CN 105164310B CN 201480024683 A CN201480024683 A CN 201480024683A CN 105164310 B CN105164310 B CN 105164310B
- Authority
- CN
- China
- Prior art keywords
- substrate
- substrate holder
- reaction chamber
- loaded
- actuator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20135280A FI125222B (en) | 2013-03-22 | 2013-03-22 | Apparatus for processing two or more substrates in a batch process |
FI20135280 | 2013-03-22 | ||
PCT/FI2014/050151 WO2014147290A1 (en) | 2013-03-22 | 2014-02-28 | An apparatus for processing two or more substrates in a batch process |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105164310A CN105164310A (zh) | 2015-12-16 |
CN105164310B true CN105164310B (zh) | 2017-05-31 |
Family
ID=51579351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480024683.2A Active CN105164310B (zh) | 2013-03-22 | 2014-02-28 | 用于在批量处理中处理两个或更多基板的装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10273579B2 (zh) |
CN (1) | CN105164310B (zh) |
DE (1) | DE112014001586B4 (zh) |
FI (1) | FI125222B (zh) |
WO (1) | WO2014147290A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10727374B2 (en) | 2015-09-04 | 2020-07-28 | Seoul Semiconductor Co., Ltd. | Transparent conductive structure and formation thereof |
US10741724B2 (en) | 2015-10-02 | 2020-08-11 | Seoul Viosys Co., Ltd. | Light emitting diode devices with zinc oxide layer |
US10981800B2 (en) | 2016-04-14 | 2021-04-20 | Seoul Semiconductor Co., Ltd. | Chamber enclosure and/or wafer holder for synthesis of zinc oxide |
US10981801B2 (en) | 2016-04-14 | 2021-04-20 | Seoul Semiconductor Co., Ltd. | Fluid handling system for synthesis of zinc oxide |
KR20190056349A (ko) * | 2016-04-14 | 2019-05-24 | 서울반도체 주식회사 | 산화아연(ZnO)의 합성을 위한 방법 및/또는 시스템 |
US10407315B2 (en) | 2016-04-14 | 2019-09-10 | Seoul Semiconductor Co., Ltd. | Method and/or system for synthesis of zinc oxide (ZnO) |
EP3559307B1 (en) * | 2017-02-08 | 2022-08-03 | Picosun Oy | Deposition or cleaning apparatus with movable structure and method of operation |
US10755955B2 (en) * | 2018-02-12 | 2020-08-25 | Applied Materials, Inc. | Substrate transfer mechanism to reduce back-side substrate contact |
FI130051B (en) * | 2019-04-25 | 2023-01-13 | Beneq Oy | DEVICE AND METHOD |
US20220372621A1 (en) * | 2021-05-18 | 2022-11-24 | Mellanox Technologies, Ltd. | Cvd system with substrate carrier and associated mechanisms for moving substrate therethrough |
FI130543B (en) * | 2021-08-13 | 2023-11-08 | Beneq Oy | Atomic layer growth device and method |
WO2024104582A1 (en) | 2022-11-17 | 2024-05-23 | Swiss Cluster Ag | Single-chamber atomic layer deposition apparatus with dual-lid closure system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101438387A (zh) * | 2006-06-26 | 2009-05-20 | 应用材料股份有限公司 | 用于ald和cvd的批式处理平台 |
CN100541711C (zh) * | 2006-03-14 | 2009-09-16 | 东京毅力科创株式会社 | 基板缓冲装置及方法和处理装置 |
CN102046856A (zh) * | 2008-05-27 | 2011-05-04 | 皮考逊公司 | 用于沉积反应器的方法和装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2555895B2 (ja) * | 1989-12-14 | 1996-11-20 | 日本電気株式会社 | 半導体ウェハー熱処理装置 |
JP3215599B2 (ja) | 1995-06-02 | 2001-10-09 | 東芝セラミックス株式会社 | 熱処理用基板保持具、熱処理方法および熱処理装置 |
US20050188923A1 (en) | 1997-08-11 | 2005-09-01 | Cook Robert C. | Substrate carrier for parallel wafer processing reactor |
JP2000311862A (ja) * | 1999-04-28 | 2000-11-07 | Kokusai Electric Co Ltd | 基板処理装置 |
WO2000070666A1 (fr) | 1999-05-14 | 2000-11-23 | Tokyo Electron Limited | Technique de traitement et dispositif correspondant |
TW200527513A (en) * | 2003-11-20 | 2005-08-16 | Hitachi Int Electric Inc | Method for manufacturing semiconductor device and substrate processing apparatus |
US8211235B2 (en) | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
JP4719070B2 (ja) * | 2006-04-27 | 2011-07-06 | 株式会社日立国際電気 | 半導体製造装置及び半導体製造方法及びボート |
KR101060633B1 (ko) | 2006-07-20 | 2011-08-31 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 반도체 디바이스의 제조 방법 및 기판 처리 장치 |
US20080226842A1 (en) * | 2006-09-29 | 2008-09-18 | Tokyo Electron Limited | Lazy Susan Tool Layout for Light-Activated ALD |
JP4313401B2 (ja) * | 2007-04-24 | 2009-08-12 | 東京エレクトロン株式会社 | 縦型熱処理装置及び被処理基板移載方法 |
JP5878813B2 (ja) * | 2011-06-21 | 2016-03-08 | 東京エレクトロン株式会社 | バッチ式処理装置 |
-
2013
- 2013-03-22 FI FI20135280A patent/FI125222B/en active IP Right Grant
-
2014
- 2014-02-28 WO PCT/FI2014/050151 patent/WO2014147290A1/en active Application Filing
- 2014-02-28 CN CN201480024683.2A patent/CN105164310B/zh active Active
- 2014-02-28 DE DE112014001586.5T patent/DE112014001586B4/de active Active
- 2014-02-28 US US14/777,613 patent/US10273579B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100541711C (zh) * | 2006-03-14 | 2009-09-16 | 东京毅力科创株式会社 | 基板缓冲装置及方法和处理装置 |
CN101438387A (zh) * | 2006-06-26 | 2009-05-20 | 应用材料股份有限公司 | 用于ald和cvd的批式处理平台 |
CN102046856A (zh) * | 2008-05-27 | 2011-05-04 | 皮考逊公司 | 用于沉积反应器的方法和装置 |
Also Published As
Publication number | Publication date |
---|---|
FI125222B (en) | 2015-07-15 |
DE112014001586B4 (de) | 2023-10-05 |
DE112014001586T5 (de) | 2016-01-21 |
WO2014147290A1 (en) | 2014-09-25 |
US10273579B2 (en) | 2019-04-30 |
US20160281228A1 (en) | 2016-09-29 |
CN105164310A (zh) | 2015-12-16 |
FI20135280A (fi) | 2014-09-23 |
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Address after: Espoo, Finland Patentee after: BENEQ Group Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |
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Effective date of registration: 20220825 Address after: Espoo, Finland Patentee after: BENEQ OY Address before: Espoo, Finland Patentee before: BENEQ Group Ltd. |
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Effective date of registration: 20230427 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Patentee after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |