RU2013143202A - Комплексы металлов с n-аминоамидинатными лигандами - Google Patents

Комплексы металлов с n-аминоамидинатными лигандами Download PDF

Info

Publication number
RU2013143202A
RU2013143202A RU2013143202/04A RU2013143202A RU2013143202A RU 2013143202 A RU2013143202 A RU 2013143202A RU 2013143202/04 A RU2013143202/04 A RU 2013143202/04A RU 2013143202 A RU2013143202 A RU 2013143202A RU 2013143202 A RU2013143202 A RU 2013143202A
Authority
RU
Russia
Prior art keywords
group
metal complexes
atoms
denotes
ligands
Prior art date
Application number
RU2013143202/04A
Other languages
English (en)
Inventor
Йёрг ЗУНДЕРМЕЙЕР
Волф ШОРН
Ральф КАРХ
Original Assignee
Умикоре Аг Унд Ко. Кг
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Умикоре Аг Унд Ко. Кг filed Critical Умикоре Аг Унд Ко. Кг
Publication of RU2013143202A publication Critical patent/RU2013143202A/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
    • B01J31/16—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes
    • B01J31/18—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony as complexing atoms, e.g. in pyridine ligands, or in resonance therewith, e.g. in isocyanide ligands C=N-R or as complexed central atoms
    • B01J31/1805—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony as complexing atoms, e.g. in pyridine ligands, or in resonance therewith, e.g. in isocyanide ligands C=N-R or as complexed central atoms the ligands containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/12—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to hydrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/006—Palladium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/062—Al linked exclusively to C
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/069—Aluminium compounds without C-aluminium linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2231/00—Catalytic reactions performed with catalysts classified in B01J31/00
    • B01J2231/30—Addition reactions at carbon centres, i.e. to either C-C or C-X multiple bonds
    • B01J2231/32—Addition reactions to C=C or C-C triple bonds
    • B01J2231/321—Hydroformylation, metalformylation, carbonylation or hydroaminomethylation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
    • B01J2531/02—Compositional aspects of complexes used, e.g. polynuclearity
    • B01J2531/0238—Complexes comprising multidentate ligands, i.e. more than 2 ionic or coordinative bonds from the central metal to the ligand, the latter having at least two donor atoms, e.g. N, O, S, P
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
    • B01J2531/10—Complexes comprising metals of Group I (IA or IB) as the central metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
    • B01J2531/30—Complexes comprising metals of Group III (IIIA or IIIB) as the central metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
    • B01J2531/40—Complexes comprising metals of Group IV (IVA or IVB) as the central metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
    • B01J2531/50—Complexes comprising metals of Group V (VA or VB) as the central metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Polymerization Catalysts (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1. Комплексы металлов, содержащие по меньшей мере один N-аминоамидинатный лиганд, где строение этих комплексов металлов соответствует общей формуле 1в которой M обозначает металл групп 1-15 Периодической системы элементов (ПСЭ),Rобозначает водород или циклический, линейный или разветвленный алкильный радикал, содержащий до 8 атомов C, или замещенный или незамещенный арильный радикал, содержащий до 20 атомов C,Rи Rнезависимо друг от друга обозначают водород, CHили CH,Rобозначает водород, CH, NH, N(CH)или N(CH),X обозначает моноанионный солиганд, выбранный из группы, включающей гидрид-ион (H), галогениды, из группы, включающей циклические, линейные или разветвленные алкилидные радикалы, содержащие до 8 атомов C, из группы, включающей замещенные или незамещенные аренидные или гетероаренидные радикалы, содержащие до 10 атомов C, из группы, включающей алкоксилатные лиганды, из группы, включающей алкилтиолатные или алкилселенатные лиганды, или из группы, включающей вторичные амидные лиганды,Y обозначает дианионный солиганд, выбранный из группы, включающей оксогруппу [O]или имидную группу [NR], где Rобозначает циклический, линейный или разветвленный алкильный радикал, содержащий до 8 атомов C, или замещенный или незамещенный арильный радикал, содержащий до 20 атомов C,L обозначает нейтральный лиганд, являющийся донором 2 электронов,а обозначает целое число, равное от 1 до 4, иn, m, и p все независимо друг от друга равны 0, 1, 2, 3 или 4.2. Комплексы металлов по п.1, в которых Rобозначает CH, CH, CH, толил, 2,6-диизопропилфенил или 2,4,6-триметилфенил (мезитил),Rи Rнезависимо друг от друга обозначают водород, CHили CH,Rобозначает водород, CH, NH, N(CH)или N(CH),X обозначает метил�

Claims (11)

1. Комплексы металлов, содержащие по меньшей мере один N-аминоамидинатный лиганд, где строение этих комплексов металлов соответствует общей формуле 1
Figure 00000001
в которой M обозначает металл групп 1-15 Периодической системы элементов (ПСЭ),
R1 обозначает водород или циклический, линейный или разветвленный алкильный радикал, содержащий до 8 атомов C, или замещенный или незамещенный арильный радикал, содержащий до 20 атомов C,
R2 и R3 независимо друг от друга обозначают водород, CH3 или C2H5,
R4 обозначает водород, CH3, NH2, N(CH3)2 или N(C2H5)2,
X обозначает моноанионный солиганд, выбранный из группы, включающей гидрид-ион (H-), галогениды, из группы, включающей циклические, линейные или разветвленные алкилидные радикалы, содержащие до 8 атомов C, из группы, включающей замещенные или незамещенные аренидные или гетероаренидные радикалы, содержащие до 10 атомов C, из группы, включающей алкоксилатные лиганды, из группы, включающей алкилтиолатные или алкилселенатные лиганды, или из группы, включающей вторичные амидные лиганды,
Y обозначает дианионный солиганд, выбранный из группы, включающей оксогруппу [O]2- или имидную группу [NR5]2-, где R5 обозначает циклический, линейный или разветвленный алкильный радикал, содержащий до 8 атомов C, или замещенный или незамещенный арильный радикал, содержащий до 20 атомов C,
L обозначает нейтральный лиганд, являющийся донором 2 электронов,
а обозначает целое число, равное от 1 до 4, и
n, m, и p все независимо друг от друга равны 0, 1, 2, 3 или 4.
2. Комплексы металлов по п.1, в которых R1 обозначает CH3, C2H5, C6H5, толил, 2,6-диизопропилфенил или 2,4,6-триметилфенил (мезитил),
R2 и R3 независимо друг от друга обозначают водород, CH3 или C2H5,
R4 обозначает водород, CH3, NH2, N(CH3)2 или N(C2H5)2,
X обозначает метилид (CH3 -), этилид (C2H5 -), изопропилид (изо-C3H7 -), трет-бутилид (трет-C4H9 -), фенилид-анион (C6H5 -), орто-, мета- или пара-толилид-анион [C6H4(CH3)]-, тиофен-2-илид-анион (C4H3S-), метилат (MeO-), этилат (EtO-), трет-бутилат (трет-BuO-), MeS-, MeSe-, (трет-Bu)S-, (трет-Bu)Se-, диметиламид (NMe2 -), диэтиламид (NEt2 -), метилэтиламид (NMeEt-) или N-пирролилид [NC4H8]-,
Y обозначает имидную группу [NtBu]2-.
3. Комплексы металлов по п.1 или 2, в которых радикал X обозначает гидрид-ион (H-), хлорид (Cl-), бромид (Br-), метилид (CH3 -), этилид (C2H5 -), диметиламид (NMe2 -) или диэтиламид (NEt2 -).
4. Комплексы металлов по п.1 или 2, в которых пиридин, диоксан, NH3, ТГФ, CO, алкилфосфины, такие как PMe3 или PCy3, или арилфосфины, такие как PPh3, используют в качестве нейтрального лиганда L, являющегося донором 2 электронов.
5. Комплексы металлов по п.1 или 2, отличающиеся тем, что они содержат 5-членное хелатное кольцо.
6. Комплексы металлов по п.1 или 2, в которых используют металл, выбранный из группы, включающей алюминий (Al), галлий (Ga), индий (In), кремний (Si), германий (Ge), олово (Sn), мышьяк (As) и сурьма (Sb), титан (Ti), цирконий (Zr), гафний (Hf), хром (Cr), марганец (Mn), железо (Fe), кобальт (Co), никель (Ni), медь (Cu) и цинк (Zn).
7. Комплексы металлов по п.1 или 2, в которых используют благородный металл, выбранный из группы, включающей рутений (Ru), родий (Rh), палладий (Pd) и платина (Pt).
8. Комплексы металлов по п.1 или 2, в которых по меньшей мере одним из лигандов является N-аминоамидинатный лиганд, выбранный из группы, включающей N,N′-бис(диметиламино)ацетамидинат ("bdma"), N-моно(диметиламино)ацетамидинат ("dama"), моно(диметиламино)ацетамидинат ("mdma") и N,N′-бис(диметиламино)формамидинат ("bdmf").
9. Комплексы металлов по п.1 или 2, в которых по меньшей мере одним из N-аминоамидинатных лигандов является N,N′-бис(диметиламино)ацетамидинат ("bdma").
10. Комплексы металлов по п.1 или 2, отличающиеся тем, что они обладают димерной структурой и содержат мостики для соединения лигандов, группы X, Y или L.
11. Комплексы металлов, содержащие по меньшей мере один нейтральный N-аминоамидиновый лиганд, где строение этих комплексов металлов соответствует общей формуле 2
Figure 00000002
в которой M обозначает металл групп 1-15 Периодической системы элементов (ПСЭ).
RU2013143202/04A 2011-02-25 2012-02-20 Комплексы металлов с n-аминоамидинатными лигандами RU2013143202A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011012515.9 2011-02-25
DE102011012515A DE102011012515A1 (de) 2011-02-25 2011-02-25 Metallkomplexe mit N-Amino-Amidinat-Liganden
PCT/EP2012/052878 WO2012113761A1 (en) 2011-02-25 2012-02-20 Metal complexes with n-aminoamidinate ligands

Publications (1)

Publication Number Publication Date
RU2013143202A true RU2013143202A (ru) 2015-04-10

Family

ID=45774174

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2013143202/04A RU2013143202A (ru) 2011-02-25 2012-02-20 Комплексы металлов с n-аминоамидинатными лигандами

Country Status (9)

Country Link
US (1) US9353139B2 (ru)
EP (1) EP2681229B1 (ru)
JP (1) JP5964865B2 (ru)
KR (1) KR101950671B1 (ru)
CN (1) CN103380139B (ru)
DE (1) DE102011012515A1 (ru)
RU (1) RU2013143202A (ru)
TW (1) TWI607012B (ru)
WO (1) WO2012113761A1 (ru)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9099301B1 (en) * 2013-12-18 2015-08-04 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Preparation of lanthanum-containing precursors and deposition of lanthanum-containing films
TWI661072B (zh) 2014-02-04 2019-06-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沈積
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
CN105503928B (zh) * 2014-10-10 2017-09-15 江南大学 用于薄膜沉积的铝前驱体及其制备方法
EP3026055A1 (en) * 2014-11-28 2016-06-01 Umicore AG & Co. KG New metal N-aminoguanidinate complexes for use in thin film fabrication and catalysis
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
EP3173507A1 (de) * 2015-11-25 2017-05-31 Umicore AG & Co. KG Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US10453701B2 (en) 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
KR102592325B1 (ko) * 2016-07-14 2023-10-20 삼성전자주식회사 알루미늄 화합물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
EP3539973A4 (en) 2016-11-08 2020-05-06 Adeka Corporation COMPOUND, STARTING MATERIAL FOR THIN FILM FORMATION, METHOD FOR PRODUCING THIN FILM, AND AMIDINE COMPOUND
US11430656B2 (en) 2016-11-29 2022-08-30 Asm Ip Holding B.V. Deposition of oxide thin films
US10145009B2 (en) 2017-01-26 2018-12-04 Asm Ip Holding B.V. Vapor deposition of thin films comprising gold
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
US11170993B2 (en) 2017-05-16 2021-11-09 Asm Ip Holding B.V. Selective PEALD of oxide on dielectric
TWI729285B (zh) * 2017-06-14 2021-06-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬薄膜的選擇性沈積
EP3498721A1 (de) * 2017-12-15 2019-06-19 Umicore Ag & Co. Kg Metallkomplexe mit triazenidoliganden und deren verwendungen zur abscheidung von metallen aus der gasphase
JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
EP3680247A1 (de) 2019-01-08 2020-07-15 Umicore Ag & Co. Kg Metallorganische verbindungen
CN111485221B (zh) * 2019-01-28 2022-03-08 江苏迈纳德微纳技术有限公司 一种基于原子层沉积技术的泡沫铜制备方法
US11965238B2 (en) 2019-04-12 2024-04-23 Asm Ip Holding B.V. Selective deposition of metal oxides on metal surfaces
KR102182245B1 (ko) * 2019-04-24 2020-11-24 한국화학연구원 구리 알콕시알킬아미드 화합물, 이의 제조방법, 및 이를 이용하여 박막을 형성하는 방법
KR20210052305A (ko) * 2019-10-30 2021-05-10 솔브레인 주식회사 인듐 전구체 화합물, 이를 이용한 박막의 제조 방법 및 이로부터 제조된 기판
US11139163B2 (en) 2019-10-31 2021-10-05 Asm Ip Holding B.V. Selective deposition of SiOC thin films
TW202140833A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
TW202204658A (zh) 2020-03-30 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 在兩不同表面上同時選擇性沉積兩不同材料
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0210291A1 (en) * 1985-07-27 1987-02-04 American Cyanamid Company Platinum complexes of antitumor agents
US4544759A (en) * 1983-07-29 1985-10-01 American Cyanamid Company Platinum complexes of antitumor agents
US5502128A (en) 1994-12-12 1996-03-26 University Of Massachusetts Group 4 metal amidinate catalysts and addition polymerization process using same
US6545108B1 (en) * 1999-02-22 2003-04-08 Eastman Chemical Company Catalysts containing N-pyrrolyl substituted nitrogen donors
EP1192189B1 (en) * 1999-02-22 2004-09-29 Eastman Chemical Company Catalysts containing n-pyrrolyl substituted nitrogen donors
DE10206113A1 (de) * 2002-02-13 2003-08-21 Basf Ag Metallkomplexe von Iminohydroxamsäuren als Polymerisationskatalysatoren
DE10206116A1 (de) * 2002-02-13 2003-08-21 Basf Ag Metallkomplexe von Iminohydroxamsäuren als Polymerisationskatalysatoren
US7816550B2 (en) * 2005-02-10 2010-10-19 Praxair Technology, Inc. Processes for the production of organometallic compounds
US20090156660A1 (en) 2006-05-03 2009-06-18 Michal Svoboda Pharmaceutical composition containing taxane derivative destined for the preparation of an infusion solution, method of preparation thereof and use thereof
WO2007142700A1 (en) 2006-06-02 2007-12-13 Advanced Technology Materials, Inc. Copper (i) amidinates and guanidinates for forming copper thin films
KR20100071463A (ko) 2008-12-19 2010-06-29 주식회사 유피케미칼 금속 박막 또는 금속 산화물 박막 증착용 유기금속 전구체 화합물 및 이를 이용한 박막 증착 방법
WO2010132871A1 (en) 2009-05-15 2010-11-18 Wayne State University Thermally stable volatile film precursors

Also Published As

Publication number Publication date
EP2681229B1 (en) 2018-09-12
JP2014511380A (ja) 2014-05-15
KR20140015404A (ko) 2014-02-06
TWI607012B (zh) 2017-12-01
CN103380139B (zh) 2016-08-10
DE102011012515A1 (de) 2012-08-30
KR101950671B1 (ko) 2019-02-21
CN103380139A (zh) 2013-10-30
US9353139B2 (en) 2016-05-31
JP5964865B2 (ja) 2016-08-03
WO2012113761A1 (en) 2012-08-30
TW201247687A (en) 2012-12-01
US20140051878A1 (en) 2014-02-20
EP2681229A1 (en) 2014-01-08

Similar Documents

Publication Publication Date Title
RU2013143202A (ru) Комплексы металлов с n-аминоамидинатными лигандами
RU2017122605A (ru) Новые комплексы металлов с n-аминогуанидинатом, предназначенные для применения для изготовления тонких пленок и для катализа
Cupertino et al. Preparation and Single-Crystal Characterization of i Pr2P (S) NHP (S) i Pr2 and Homoleptic [i Pr2P (S) NP (S) i Pr2]-Complexes of Zinc, Cadmium, and Nickel
Avent et al. Synthesis and characterisation of bis (amino) silylene–nickel (0),–palladium (II),–platinum (0),–platinum (II) and copper (I) complexes
Akita et al. Synthesis and Structure Determination of the Linear Conjugated Polyynyl and Polyynediyl Iron Complexes Fp*−(C⋮ C) n− X (X= H (n= 1, 2); X= Fp*(n= 1, 2, 4); Fp*=(η5-C5Me5) Fe (CO) 2)
Levy et al. Synthesis and characterization of group 14− platinum (IV) complexes
Tschersich et al. PBiP Pincer Complexes of Platinum, Palladium, and Iridium Featuring Metal–Metal Bonds Synthesized by Oxidative Addition of Bismuth–Halide Bonds
Chauhan et al. Reactivity of hemilabile pyridyl-and methyl-substituted pyrimidylselenolates with [MCl2 (dppf)](M= Pd, Pt; dppf= bis (diphenylphisphino) ferrocene)
Raghavan et al. Structurally characterized α-diimine complexes of s-and p-block elements
Li et al. Dihalogen-templated synthesis of dodecanuclear silver dichalcogenophosphate clusters
Raja et al. Arene ruthenium and pentamethylcyclopentadienyl rhodium and iridium complexes containing N, O-chelating ligands derived from piroxicam: Synthesis, molecular structure and cytotoxicity
Alegria et al. Syntheses and properties of Re (III) complexes derived from hydrotris (1-pyrazolyl) methanes: molecular structure of [ReCl2 (HCpz3)(PPh3)][BF4]
Crespo et al. Reactions of [C, N, N′]-cyclometallated platinum compounds with phosphines: transphobia and effect of the chloro substituents: Crystal structure of [PtCl (3, 5-C6H2Cl2CHNCH2CH2NMe2)(PPh3) 2]
Niklas et al. Ni (II), Cu (II) and Zn (II) complexes of a bifunctional bis (picolyl) amine (bpa) ligand derived from glycine
Batsanov et al. Saccharinate–metal complexes with 1, 10-phenanthroline (phen) or 2, 2′-bipyridine (bipy) as co-ligands; the synthesis, crystal and molecular structures of five new compounds of divalent metals
Kochnev et al. Theoretical study of dodecahydro-closo-decaborane B 10 H 12, the diprotonated boron cluster B 10 H 10 2−
Molon et al. The Organozinc Rich Compounds [Cp* M (ZnR) 5](M= Fe, Ru; R= Cp*, Me, Cl, Br)
Srivastav et al. Diverse Molecular Architectures of Si and Sn [4.4. 3.01, 6] Tridecane Cages Derived from a Mannich Base Possessing Semi‐Rigid Unsymmetrical Podands
Carpenter-Warren et al. Synthesis, metal coordination and structural studies of trisubstituted P {CH2-1-N (H) naphthyl} 3 ligands
Yogi et al. Synthesis and structural characterization of novel ruthenium (II) complexes featuring an N, N, O-scorpionate ligand: A versatile synthetic precursor for open-face scorpionatoruthenium (II) complexes
Cavarzan et al. The first P–N containing RuCl3NO complex: fac-[RuCl3 (NO)(P–N)](P–N=[o-(N, N-dimethylamino) phenyl] diphenylphosphine)
Cucciolito et al. Coordination modes of cis-P, P′-diphenyl-1, 4-diphospha-cyclohexane to metal ions of Groups 9 and 10
Aucott et al. Coordination chemistry of o-Ph2PNHC6H4P (S) Ph2 a P, S-donor ligand: synthesis of new Ru, Rh and Ir complexes
Han et al. μ3-SH dicapped triangular copper (I) complex of bis (diphenylphosphino) amine
Oke et al. Heterobinuclear methyl complexes of rhodium/iridium: Reactivity with nucleophiles and subsequent ligand rearrangements

Legal Events

Date Code Title Description
FA93 Acknowledgement of application withdrawn (no request for examination)

Effective date: 20150224