RU2007117152A - Высокоэффективные светоизлучающие диоды - Google Patents

Высокоэффективные светоизлучающие диоды Download PDF

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RU2007117152A
RU2007117152A RU2007117152/28A RU2007117152A RU2007117152A RU 2007117152 A RU2007117152 A RU 2007117152A RU 2007117152/28 A RU2007117152/28 A RU 2007117152/28A RU 2007117152 A RU2007117152 A RU 2007117152A RU 2007117152 A RU2007117152 A RU 2007117152A
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RU2007117152/28A
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Чарльз ТУ (US)
Чарльз ТУ
Владимир ОДНОБЛЮДОВ (US)
Владимир ОДНОБЛЮДОВ
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Дзе Риджентс Оф Дзе Юниверсити Оф Калифорния (Us)
Дзе Риджентс Оф Дзе Юниверсити Оф Калифорния
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Publication of RU2007117152A publication Critical patent/RU2007117152A/ru

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Claims (11)

1. Структура СИД, включающая в себя следующие слои:
a) подложка GaP n-типа;
b) буферный слой AlxGa1-xP, n-типа или беспримесный;
c) предотвращающий утечку дырок слой AlyGa1-yP, n-типа или беспримесный;
d) множество следующих слоев:
запирающий слой AlzGa1-zP/активный слой AlnInmGa1-m-nNcAsvSbkP1-c-v-k, n- или p-типа или беспримесный; и
e) верхний защитный/контактный слой InwAlsGa1-s-wP, p-типа или беспримесный.
2. Структура СИД по п.1 с такими составами x, y, z, n, m, c, v, s, w, k, что: 0≤x≤y≤1, 0≤z, n, m, c, v, s, w, k≤1.
3. Структура СИД, включающая в себя следующие слои:
a) подложка GaP p-типа;
b) буферный слой AlxGa1-xP, p-типа или беспримесный;
c) множество следующих слоев:
запирающий слой AlzGa1-zP/активный слой AlnInmGa1-m-nNcAsvSbkP1-c-v-k, n- или p-типа или беспримесный;
d) предотвращающий утечку дырок слой AlyGa1-yP, n-типа или беспримесный;
e) верхний защитный/контактный слой InwAlsGa1-s-wP, n-типа или беспримесный.
4. Структура СИД по п.1, в которой до, внутри или после верхнего защитного/контактного слоя InwAlsGa1-s-wP лежит слой растекания/запирания тока AltGa1-tP, n-типа, p-типа или беспримесный.
5. Структура СИД по п.3, в которой до, внутри или после буферного слоя AlxGa1-xP лежит слой растекания/запирания тока AltGa1-tP, n-типа, p-типа или беспримесный.
6. Структура СИД по п.1, дополнительно включающая в себя дельта-легированные слои n-типа или p-типа, осажденные на границах раздела между слоями или в любом месте внутри указанных слоев.
7. Структура СИД по п.3, дополнительно включающая в себя дельта-легированные слои n-типа или p-типа, осажденные на границах раздела между слоями или в любом месте внутри указанных слоев.
8. Структура СИД по п.4, дополнительно включающая в себя дельта-легированные слои n-типа или p-типа, осажденные на границах раздела между слоями или в любом месте внутри указанных слоев.
9. Структура СИД по п.5, дополнительно включающая в себя дельта-легированные слои n-типа или p-типа, осажденные на границах раздела между слоями или в любом месте внутри указанных слоев.
10. Структуры СИД по пп.1, 3, 4 или 5, в которых слои или части слоев выращены с использованием технологии сверхрешеток или «дискретных сплавов».
11. Структуры СИД по пп.1, 3, 4 или 5, в которых улучшение оптических характеристик достигнуто путем применения отжига этих структур во время или после роста при температуре отжига более высокой, чем наивысшая используемая температура роста.
RU2007117152/28A 2004-10-08 2005-10-08 Высокоэффективные светоизлучающие диоды RU2007117152A (ru)

Applications Claiming Priority (2)

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US61746504P 2004-10-08 2004-10-08
US60/617,465 2004-10-08

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US (2) US20080111123A1 (ru)
EP (1) EP1805805A4 (ru)
JP (1) JP2008516456A (ru)
KR (1) KR20070093051A (ru)
CN (1) CN101390214A (ru)
AU (1) AU2005322570A1 (ru)
CA (1) CA2583504A1 (ru)
RU (1) RU2007117152A (ru)
WO (1) WO2006071328A2 (ru)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101438806B1 (ko) 2007-08-28 2014-09-12 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102009004895A1 (de) * 2009-01-16 2010-07-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
EP2427924A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
GB0911134D0 (en) * 2009-06-26 2009-08-12 Univ Surrey Optoelectronic devices
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
WO2011008474A1 (en) 2009-06-30 2011-01-20 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
TWM388109U (en) * 2009-10-15 2010-09-01 Intematix Tech Center Corp Light emitting diode apparatus
CN102254954A (zh) * 2011-08-19 2011-11-23 中国科学院上海微系统与信息技术研究所 含有数字合金位错隔离层的大失配外延缓冲层结构及制备
KR101376976B1 (ko) * 2012-06-29 2014-03-21 인텔렉추얼디스커버리 주식회사 반도체 발광 디바이스
KR102068379B1 (ko) * 2012-07-05 2020-01-20 루미리즈 홀딩 비.브이. 질소 및 인을 포함하는 발광 층을 갖는 발광 다이오드
CN103633217B (zh) * 2012-08-27 2018-07-27 晶元光电股份有限公司 发光装置
RU2547383C2 (ru) * 2013-08-28 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Способ нанесения эмиссионного слоя
KR102294202B1 (ko) * 2017-07-28 2021-08-25 루미레즈 엘엘씨 발광 디바이스들에서의 효율적인 전자 및 정공 차단을 위한 변형된 AlGaInP 층들
US11322650B2 (en) 2017-07-28 2022-05-03 Lumileds Llc Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
US10141477B1 (en) 2017-07-28 2018-11-27 Lumileds Llc Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
US10874876B2 (en) * 2018-01-26 2020-12-29 International Business Machines Corporation Multiple light sources integrated in a neural probe for multi-wavelength activation
CN109217109B (zh) * 2018-08-29 2020-05-26 中国科学院半导体研究所 基于数字合金势垒的量子阱结构、外延结构及其制备方法
US11424376B2 (en) * 2019-04-09 2022-08-23 Peng DU Superlattice absorber for detector

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103271A (en) * 1989-09-28 1992-04-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating the same
JP2773597B2 (ja) * 1993-03-25 1998-07-09 信越半導体株式会社 半導体発光装置及びその製造方法
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
JP4097232B2 (ja) * 1996-09-05 2008-06-11 株式会社リコー 半導体レーザ素子
KR19990014304A (ko) * 1997-07-30 1999-02-25 아사구사 나오유끼 반도체 레이저, 반도체 발광 소자 및 그 제조 방법
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US20020104997A1 (en) * 2001-02-05 2002-08-08 Li-Hsin Kuo Semiconductor light emitting diode on a misoriented substrate
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
JP2003229600A (ja) * 2001-11-27 2003-08-15 Sharp Corp 半導体発光素子
US7919791B2 (en) * 2002-03-25 2011-04-05 Cree, Inc. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US6987286B2 (en) * 2002-08-02 2006-01-17 Massachusetts Institute Of Technology Yellow-green epitaxial transparent substrate-LEDs and lasers based on a strained-InGaP quantum well grown on an indirect bandgap substrate

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Publication number Publication date
JP2008516456A (ja) 2008-05-15
EP1805805A4 (en) 2011-05-04
WO2006071328A2 (en) 2006-07-06
WO2006071328A3 (en) 2008-07-17
US20080111123A1 (en) 2008-05-15
US20090108276A1 (en) 2009-04-30
KR20070093051A (ko) 2007-09-17
EP1805805A2 (en) 2007-07-11
AU2005322570A1 (en) 2006-07-06
CA2583504A1 (en) 2006-07-06
CN101390214A (zh) 2009-03-18

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