RU2007105817A - Химическое осаждение из паровой фазы при атмосферном давлении - Google Patents

Химическое осаждение из паровой фазы при атмосферном давлении Download PDF

Info

Publication number
RU2007105817A
RU2007105817A RU2007105817/03A RU2007105817A RU2007105817A RU 2007105817 A RU2007105817 A RU 2007105817A RU 2007105817/03 A RU2007105817/03 A RU 2007105817/03A RU 2007105817 A RU2007105817 A RU 2007105817A RU 2007105817 A RU2007105817 A RU 2007105817A
Authority
RU
Russia
Prior art keywords
substrate
semiconductor material
atmospheric pressure
temperature
fluid mixture
Prior art date
Application number
RU2007105817/03A
Other languages
English (en)
Other versions
RU2421418C2 (ru
Inventor
Норман В. ДЖОНСТОН (US)
Норман В. ДЖОНСТОН
Original Assignee
Солар Филдс Ллк (Us)
Солар Филдс Ллк
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Солар Филдс Ллк (Us), Солар Филдс Ллк filed Critical Солар Филдс Ллк (Us)
Publication of RU2007105817A publication Critical patent/RU2007105817A/ru
Application granted granted Critical
Publication of RU2421418C2 publication Critical patent/RU2421418C2/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Claims (11)

1. Способ нанесения покрытия на подложку при атмосферном давлении, включающий следующие операции:
испарение практически при атмосферном давлении контролируемой массы полупроводникового материала внутри нагретого потока инертного газа для получения текучей смеси, температура которой превышает температуру конденсации полупроводникового материала;
направление текучей смеси практически при атмосферном давлении на подложку, температура которой находится ниже температуры конденсации полупроводникового материала; и
осаждение слоя полупроводникового материала на поверхность подложки.
2. Способ по п.1, в котором полупроводниковый материал включает сульфид кадмия или теллурид кадмия.
3. Способ по п.1, в котором инертный газ представляет собой азот.
4. Способ по п.1, в котором температура текучей смеси находится в диапазоне приблизительно от 800 до 1100°.
5. Способ по п.1, в котором подложка включает стекло.
6. Способ по п.5, в котором на стекло нанесено прозрачное, электропроводящее покрытие, имеющее низкую излучательную (эмиссионную) способность.
7. Способ по п.1, в котором температура подложки находится в диапазоне приблизительно от 585 до 650°.
8. Способ по п.1, в котором операции испарения, направления и осаждения повторяют по меньшей мере один раз с целью осаждения по меньшей мере одного дополнительного слоя полупроводникового материала на подложку.
9. Способ нанесения покрытия на подложку при атмосферном давлении, включающий следующие операции:
испарение практически при атмосферном давлении контролируемой массы полупроводникового материала, включающего сульфид кадмия или теллурид кадмия, внутри нагретого потока газообразного азота, для получения текучей смеси, температура которой находится в диапазоне приблизительно от 800 до 1100°;
направление текучей смеси практически при атмосферном давлении на стеклянную подложку, на которую нанесено прозрачное, электропроводящее покрытие, имеющее низкую излучательную (эмиссионную) способность, находящуюся при температуре в диапазоне приблизительно от 585 до 650°; и
осаждение слоя полупроводникового материала на поверхность подложки.
10. Способ по п.9, в котором операции испарения, направления и осаждения повторяют по меньшей мере один раз с целью осаждения по меньшей мере одного дополнительного слоя полупроводникового материала на подложку.
11. Способ нанесения покрытия на подложку при атмосферном давлении, включающий следующие операции:
испарение практически при атмосферном давлении контролируемой массы полупроводникового материала, включающего сульфид кадмия или теллурид кадмия, внутри нагретого потока газообразного азота, для получения текучей смеси, температура которой находится в диапазоне приблизительно от 800 до 1100°;
направление текучей смеси практически при атмосферном давлении на стеклянную подложку, на которую нанесено прозрачное, электропроводящее покрытие, имеющее низкую излучательную (эмиссионную) способность, находящуюся при температуре в диапазоне приблизительно от 585 до 650°;
осаждение слоя полупроводникового материала на поверхность подложки; и
повторение операций испарения, направления и осаждения по меньшей мере один раз с целью осаждения по меньшей мере одного дополнительного слоя полупроводникового материала на подложку.
RU2007105817/03A 2004-08-18 2005-08-02 Химическое осаждение из паровой фазы при атмосферном давлении RU2421418C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60240504P 2004-08-18 2004-08-18
US60/602,405 2004-08-18

Publications (2)

Publication Number Publication Date
RU2007105817A true RU2007105817A (ru) 2008-09-27
RU2421418C2 RU2421418C2 (ru) 2011-06-20

Family

ID=35968050

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2007105817/03A RU2421418C2 (ru) 2004-08-18 2005-08-02 Химическое осаждение из паровой фазы при атмосферном давлении

Country Status (17)

Country Link
US (2) US7674713B2 (ru)
EP (2) EP1794349A2 (ru)
JP (3) JP5026971B2 (ru)
KR (1) KR101119863B1 (ru)
CN (2) CN101432457B (ru)
BR (1) BRPI0514490A (ru)
CA (2) CA2577307A1 (ru)
ES (1) ES2467161T3 (ru)
IL (1) IL181394A (ru)
MA (1) MA29364B1 (ru)
MX (2) MX2007001909A (ru)
PL (1) PL1799878T3 (ru)
PT (1) PT1799878E (ru)
RU (1) RU2421418C2 (ru)
TN (1) TNSN07064A1 (ru)
WO (2) WO2006023263A2 (ru)
ZA (1) ZA200701374B (ru)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2257970A4 (en) 2008-03-05 2015-09-02 Hanergy Hi Tech Power Hk Ltd BUFFER LAYER DEPOSITION FOR THIN FILM SOLAR CELLS
US20100087015A1 (en) * 2008-03-05 2010-04-08 Global Solar Energy, Inc. Feedback for buffer layer deposition
US8609182B2 (en) * 2008-03-05 2013-12-17 Global Solar Energy, Inc. Solution containment during buffer layer deposition
JP5738600B2 (ja) * 2008-03-05 2015-06-24 ハナジー・ハイ−テク・パワー・（エイチケー）・リミテッド 緩衝層蒸着のための加熱
US9252318B2 (en) 2008-03-05 2016-02-02 Hanergy Hi-Tech Power (Hk) Limited Solution containment during buffer layer deposition
CA2649322C (en) * 2008-09-30 2011-02-01 5N Plus Inc. Cadmium telluride production process
US8076224B2 (en) * 2008-12-08 2011-12-13 Calyxo Gmbh Thin-film deposition and recirculation of a semi-conductor material
US20110207301A1 (en) * 2010-02-19 2011-08-25 Kormanyos Kenneth R Atmospheric pressure chemical vapor deposition with saturation control
DE102010028277B4 (de) 2010-04-27 2013-04-18 Calyxo Gmbh Verfahren und Vorrichtung zur Herstellung einer mit einem Halbleitermaterial beschichteten Glasscheibe und nach dem Verfahren erhältliche Solarzelle oder Solarmodul
CN103329245B (zh) * 2010-12-17 2016-09-07 第一太阳能有限公司 光伏装置
WO2012158443A2 (en) 2011-05-13 2012-11-22 Sheperak Thomas J Plasma directed electron beam wound care system apparatus and method
DE102012102492A1 (de) 2012-03-22 2013-09-26 Calyxo Gmbh Solarzelle mit dispergierter Halbleiterschicht
US9324898B2 (en) 2012-09-25 2016-04-26 Alliance For Sustainable Energy, Llc Varying cadmium telluride growth temperature during deposition to increase solar cell reliability
TWI485276B (zh) * 2013-12-05 2015-05-21 Nat Inst Chung Shan Science & Technology 提升硒化物薄膜成長品質之蒸鍍裝置
CN106319479B (zh) * 2015-07-06 2018-07-13 北大方正集团有限公司 皮带定位装置及常压化学气相沉积设备
DE102017107836A1 (de) * 2017-04-11 2018-10-11 Calyxo Gmbh Verfahren und Einrichtung zur Gasphasen-Abscheidung von Schichten
RU2683177C1 (ru) * 2017-10-05 2019-03-26 Российская Федерация, от имени которой выступает Государственная корпорация по космической деятельности "РОСКОСМОС" Способ плазменного нанесения наноструктурированного теплозащитного покрытия

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504526A (en) * 1983-09-26 1985-03-12 Libbey-Owens-Ford Company Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
JPH10303445A (ja) * 1997-04-28 1998-11-13 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の製造方法とそれを用いた太陽電池
WO1997045880A1 (en) * 1996-05-28 1997-12-04 Matsushita Battery Industrial Co., Ltd. METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM
US6037241A (en) * 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
JP2001223209A (ja) * 2000-02-08 2001-08-17 Seiko Epson Corp 絶縁性，半導電性，および導電性薄膜の製造方法
ATE381785T1 (de) * 2000-07-26 2008-01-15 Antec Solar Energy Ag Verfahren zum aktivieren von cdte- dünnschichtsolarzellen
ES2331606T3 (es) * 2001-10-05 2010-01-11 SOLAR SYSTEMS & EQUIPMENTS S.R.L. Procedimiento para la produccion a gran escala de celulas solares de pelicula delgada de cdte/cds.
US7927659B2 (en) * 2005-04-26 2011-04-19 First Solar, Inc. System and method for depositing a material on a substrate
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate

Also Published As

Publication number Publication date
TNSN07064A1 (en) 2008-06-02
MA29364B1 (fr) 2008-04-01
WO2006023262A3 (en) 2009-04-02
ES2467161T3 (es) 2014-06-12
US20080311729A1 (en) 2008-12-18
KR20070074545A (ko) 2007-07-12
CN101432457B (zh) 2013-06-12
US20080153268A1 (en) 2008-06-26
MX2007001914A (es) 2008-10-24
EP1799878A2 (en) 2007-06-27
WO2006023262A2 (en) 2006-03-02
KR101119863B1 (ko) 2012-02-22
IL181394A0 (en) 2008-04-13
ZA200701374B (en) 2008-04-30
BRPI0514490A (pt) 2008-06-17
EP1799878A4 (en) 2011-10-12
CA2577307A1 (en) 2006-03-02
CA2577304A1 (en) 2006-03-02
JP5026971B2 (ja) 2012-09-19
IL181394A (en) 2013-05-30
PT1799878E (pt) 2014-06-09
PL1799878T3 (pl) 2014-08-29
EP1794349A2 (en) 2007-06-13
MX2007001909A (es) 2008-10-24
EP1799878B1 (en) 2014-03-05
WO2006023263A2 (en) 2006-03-02
JP2011233920A (ja) 2011-11-17
US7674713B2 (en) 2010-03-09
CA2577304C (en) 2012-04-03
US7635647B2 (en) 2009-12-22
CN101432457A (zh) 2009-05-13
WO2006023263A3 (en) 2009-04-02
RU2421418C2 (ru) 2011-06-20
JP2008514808A (ja) 2008-05-08
JP2008514809A (ja) 2008-05-08
CN101432458A (zh) 2009-05-13

Similar Documents

Publication Publication Date Title
RU2007105817A (ru) Химическое осаждение из паровой фазы при атмосферном давлении
KR101146267B1 (ko) 필름을 형성하기 위해 유기 물질을 표면상으로 증기화하는 장치 및 방법
TW574387B (en) Method of manufacturing high-mobility organic thin films using organic vapor phase deposition
JP3187417U (ja) 封入されたグラファイト加熱器および方法
US8535759B2 (en) Method and apparatus for depositing material using a dynamic pressure
CN110241400B (zh) 无胶转移制备单层过渡金属硫族化合物纵向异质结的方法
KR910019113A (ko) 집적 공정 시스템에서 티타늄과 질소함유 가스의 반응에 의해 반도체 웨이퍼상에 질화티타늄을 형성시키는 방법
WO2006057711A3 (en) Method for preparing solid precursor tray for use in solid precursor evaporation system
TW200628619A (en) Vacuum coating system
EP1596428A4 (en) ORGANIC THIN FILM TRANSISTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
CN103606514B (zh) 基于GaN衬底CVD外延生长石墨烯的化学腐蚀转移方法
CN108767050B (zh) 基于氧化亚铜/氧化镓pn结的柔性紫外光电探测器及其制备方法
RU2009134480A (ru) Устойчивые к воздействию воздуха распределители щелочных и щелочноземельных металлов
WO2011084292A3 (en) Silicon thin film solar cell having improved haze and methods of making the same
WO2003021690A3 (fr) Procede de depot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat
Verardi et al. AlN thin films deposition by laser ablation of Al target in nitrogen reactive atmosphere
DE102004034103A1 (de) Verfahren zur Abscheidung von Silizium und Germanium enthaltenen Schichten und Schichtfolgen unter Verwendung von nicht-kontinuierlicher Injektion von flüssigen und gelösten Ausgangssubstanzen über eine Mehrkanalinjektionseinheit
CN108603277A (zh) 用于将CdTe-层沉积在基材上的方法
WO2000060135A3 (de) Verfahren zur herstellung dünner, schwer löslicher beschichtungen
RU2347298C1 (ru) СПОСОБ ПОЛУЧЕНИЯ Cu(In, Ga)(S, Se)2 ТОНКИХ ПЛЕНОК
McCandless et al. High throughput processing of CdTe/CdS solar cells
Yase et al. Formation Mechanism of Thin Solid Films of Alq3 on Several Substrates
Marotta et al. Sensors based on pulsed laser deposition of multilayers of metal oxides
Mubin et al. Nitrogen oxide gas sensor based on metal oxide thin film
CN108598266B (zh) 基于隧穿效应的钙钛矿光电器件及其制备方法

Legal Events

Date Code Title Description
PC41 Official registration of the transfer of exclusive right

Effective date: 20191204

MM4A The patent is invalid due to non-payment of fees

Effective date: 20200803