RO91160B1 - Procedeu de depunere a sursei locale pentru doparea cu zinc a plachetelor semiconductoare - Google Patents
Procedeu de depunere a sursei locale pentru doparea cu zinc a plachetelor semiconductoareInfo
- Publication number
- RO91160B1 RO91160B1 RO118951A RO11895185A RO91160B1 RO 91160 B1 RO91160 B1 RO 91160B1 RO 118951 A RO118951 A RO 118951A RO 11895185 A RO11895185 A RO 11895185A RO 91160 B1 RO91160 B1 RO 91160B1
- Authority
- RO
- Romania
- Prior art keywords
- zinc
- deposition
- local source
- doping
- cathode
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 235000012431 wafers Nutrition 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 3
- 239000011701 zinc Substances 0.000 abstract 3
- 229910052725 zinc Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Inventia se refera la un procedeu de depunere a sursei locale pentru doparea cu zinc a plachetelor semiconductoare utilizat pentru obtinerea de dispozitive optoelectronice si de microunde. Procedeul conform inventiei prevede depunerea unui strat subtire de bioxid de siliciu în ferestrele pentru difuzie taiate pe suprafata plachetelor semiconductoare si apoi depunerea la rece cca 450 degree K a unui strat de sursa locala de zinc în/si pe suprafata stratului de SiO2 folosind ca tinta un disc de zinc de puritate electronica fixat la catodul instalatiei de pulverizare catodica, în curenti de radiofrecventa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO118951A RO91160B1 (ro) | 1985-05-28 | 1985-05-28 | Procedeu de depunere a sursei locale pentru doparea cu zinc a plachetelor semiconductoare |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO118951A RO91160B1 (ro) | 1985-05-28 | 1985-05-28 | Procedeu de depunere a sursei locale pentru doparea cu zinc a plachetelor semiconductoare |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO91160A2 RO91160A2 (ro) | 1987-03-30 |
| RO91160B1 true RO91160B1 (ro) | 1987-03-31 |
Family
ID=20117295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO118951A RO91160B1 (ro) | 1985-05-28 | 1985-05-28 | Procedeu de depunere a sursei locale pentru doparea cu zinc a plachetelor semiconductoare |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO91160B1 (ro) |
-
1985
- 1985-05-28 RO RO118951A patent/RO91160B1/ro unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RO91160A2 (ro) | 1987-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54161268A (en) | Method of manufacturing semiconductor device growing silicon layer on sapphire substrate | |
| FR2283550B1 (ro) | ||
| GB753140A (en) | Improvements in or relating to electric semi-conducting devices | |
| JPS54157485A (en) | Planar semiconductor device | |
| GB1465830A (en) | Reducing boundary charges in semiconductor layers grown on a substrate | |
| GB1386762A (en) | Method of forming impurity diffused junctions in a semiconductor wafer | |
| EP0170560A3 (en) | Backside gettering of silicon wafers | |
| GB1342544A (en) | Method of forming glass layers | |
| GB1529081A (en) | Gallium arsenide impatt diodes | |
| RO91547B (ro) | Procedeu pentru fabricarea unui dispozitiv semiconductor | |
| EP0193298A3 (en) | Method for the formation of epitaxial layers for integrated circuits | |
| JPS5364471A (en) | Method of producing silicon nitride barrier on semiconductor substrate | |
| GB1228819A (ro) | ||
| FR2377703A1 (fr) | Procede de fabrication de dispositif semi-conducteur | |
| GB1467145A (en) | Method of forming a wafer of semiconductor material and the wafer so formed | |
| IE33385B1 (en) | Semiconductor device and fabrication of same | |
| JPS57102053A (en) | Semiconductor device | |
| JPS57126172A (en) | Schottky barrier diode | |
| JPS5633845A (en) | Manufacture of semiconductor device | |
| JPS54159886A (en) | Production of semiconductor device | |
| JPS57159017A (en) | Manufacture of semiconductor single crystal film | |
| JPS5717167A (en) | Mesa type semiconductor device | |
| JPS5727078A (en) | Semiconductor device having light receiving element | |
| JPS54102869A (en) | Manufacture for semiconductor device | |
| JPS54157496A (en) | Manufacture of tunnel junction |