PT3121652T - Composição de resina sensível a radiação e componente eletrónica - Google Patents

Composição de resina sensível a radiação e componente eletrónica

Info

Publication number
PT3121652T
PT3121652T PT157653049T PT15765304T PT3121652T PT 3121652 T PT3121652 T PT 3121652T PT 157653049 T PT157653049 T PT 157653049T PT 15765304 T PT15765304 T PT 15765304T PT 3121652 T PT3121652 T PT 3121652T
Authority
PT
Portugal
Prior art keywords
radiation
resin composition
electronic component
sensitive resin
sensitive
Prior art date
Application number
PT157653049T
Other languages
English (en)
Inventor
Tsutsumi Takashi
Original Assignee
Zeon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeon Corp filed Critical Zeon Corp
Publication of PT3121652T publication Critical patent/PT3121652T/pt

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
PT157653049T 2014-03-20 2015-03-18 Composição de resina sensível a radiação e componente eletrónica PT3121652T (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014058526 2014-03-20

Publications (1)

Publication Number Publication Date
PT3121652T true PT3121652T (pt) 2019-11-05

Family

ID=54144683

Family Applications (1)

Application Number Title Priority Date Filing Date
PT157653049T PT3121652T (pt) 2014-03-20 2015-03-18 Composição de resina sensível a radiação e componente eletrónica

Country Status (8)

Country Link
US (1) US9880468B2 (pt)
EP (1) EP3121652B1 (pt)
JP (1) JP6524996B2 (pt)
KR (1) KR102377464B1 (pt)
CN (1) CN106062631B (pt)
PT (1) PT3121652T (pt)
TW (1) TWI664501B (pt)
WO (1) WO2015141719A1 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190079396A1 (en) * 2016-03-28 2019-03-14 Zeon Corporation Radiation sensitive resin composition and electronic component
WO2018097625A2 (ko) * 2016-11-28 2018-05-31 주식회사 엘지화학 액정 배향막, 이의 제조방법 및 이를 이용한 액정표시소자
JP6988121B2 (ja) * 2017-03-23 2022-01-05 住友ベークライト株式会社 感光性樹脂組成物及び半導体装置
KR102473325B1 (ko) * 2017-03-30 2022-12-01 니폰 제온 가부시키가이샤 감방사선 수지 조성물 및 전자 부품
KR102065718B1 (ko) * 2017-10-17 2020-02-11 주식회사 엘지화학 액정 배향막 및 이를 이용한 액정표시소자
KR102238704B1 (ko) 2018-12-21 2021-04-08 주식회사 엘지화학 가교제 화합물, 이를 포함하는 감광성 조성물, 및 이를 이용한 감광 재료
KR20220069932A (ko) 2019-09-27 2022-05-27 니폰 제온 가부시키가이샤 감방사선성 수지 조성물
JP7201132B2 (ja) * 2020-12-25 2023-01-10 昭和電工マテリアルズ株式会社 積層板及び配線基板の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2706859B2 (ja) * 1991-07-30 1998-01-28 富士写真フイルム株式会社 光硬化性樹脂組成物、保護層の形成方法及びカラーフイルター
TW200604226A (en) * 2004-03-31 2006-02-01 Zeon Corp Radiation-sensitive composition, multilayer body and method for producing same, and electronic component
JP4613763B2 (ja) 2005-09-12 2011-01-19 住友ベークライト株式会社 ポジ型感光性樹脂組成物、およびそれを用いたパターン形成方法、半導体装置、半導体装置の製造方法、表示体装置、表示体装置の製造方法
JP4935272B2 (ja) 2006-09-26 2012-05-23 東レ株式会社 ポジ型感光性樹脂組成物
EP2110708B1 (en) 2007-02-13 2012-12-05 Toray Industries, Inc. Positive-type photosensitive resin composition
CN102132212B (zh) 2008-09-04 2013-08-28 日立化成株式会社 正型感光性树脂组合物、抗蚀图形的制造方法以及电子部件
JP2009301056A (ja) * 2009-09-17 2009-12-24 Sumitomo Bakelite Co Ltd 半導体表面保護膜用樹脂組成物、及びそれを用いた半導体装置
CN102668046B (zh) * 2009-09-29 2014-12-10 日本瑞翁株式会社 半导体元件基板
US8883391B2 (en) 2009-12-28 2014-11-11 Toray Industries, Inc. Positive type photosensitive resin composition
JP5661293B2 (ja) 2010-02-08 2015-01-28 太陽ホールディングス株式会社 光硬化性樹脂組成物、ドライフィルム、硬化物及びプリント配線板
JPWO2012133617A1 (ja) * 2011-03-30 2014-07-28 日本ゼオン株式会社 樹脂組成物および半導体素子基板
JP5981738B2 (ja) 2012-03-14 2016-08-31 旭化成株式会社 感光性樹脂組成物、及び硬化レリーフパターンの製造方法
JP2013217954A (ja) 2012-04-04 2013-10-24 Hitachi Chemical Co Ltd レジストパターンの形成方法、永久マスクレジスト及び感光性樹脂組成物
JPWO2014087957A1 (ja) 2012-12-03 2017-01-05 Jsr株式会社 電解質膜アセンブリー、膜−電極接合体、燃料電池、水電解セルおよび水電解装置
JP5966972B2 (ja) * 2013-03-01 2016-08-10 Jsr株式会社 感放射線性樹脂組成物、絶縁膜および有機ｅｌ素子
JP6303588B2 (ja) * 2013-08-08 2018-04-04 Jsr株式会社 感放射線性樹脂組成物、絶縁膜及びその形成方法並びに有機ｅｌ素子
JP5613851B1 (ja) 2014-02-28 2014-10-29 Jsr株式会社 表示又は照明装置

Also Published As

Publication number Publication date
EP3121652A1 (en) 2017-01-25
KR20160137527A (ko) 2016-11-30
US9880468B2 (en) 2018-01-30
EP3121652B1 (en) 2019-09-04
CN106062631A (zh) 2016-10-26
CN106062631B (zh) 2019-11-22
WO2015141719A1 (ja) 2015-09-24
US20170017155A1 (en) 2017-01-19
TW201539140A (zh) 2015-10-16
KR102377464B1 (ko) 2022-03-21
JPWO2015141719A1 (ja) 2017-04-13
TWI664501B (zh) 2019-07-01
JP6524996B2 (ja) 2019-06-05
EP3121652A4 (en) 2017-10-18

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