PT1005089E - Dispositivo electrónico de potência - Google Patents
Dispositivo electrónico de potência Download PDFInfo
- Publication number
- PT1005089E PT1005089E PT99402889T PT99402889T PT1005089E PT 1005089 E PT1005089 E PT 1005089E PT 99402889 T PT99402889 T PT 99402889T PT 99402889 T PT99402889 T PT 99402889T PT 1005089 E PT1005089 E PT 1005089E
- Authority
- PT
- Portugal
- Prior art keywords
- conducting
- circuits
- bar
- layout
- contacts
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9815157A FR2786655B1 (fr) | 1998-11-27 | 1998-11-27 | Dispositif electronique de puissance |
Publications (1)
Publication Number | Publication Date |
---|---|
PT1005089E true PT1005089E (pt) | 2008-03-27 |
Family
ID=9533443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PT99402889T PT1005089E (pt) | 1998-11-27 | 1999-11-22 | Dispositivo electrónico de potência |
Country Status (13)
Country | Link |
---|---|
US (1) | US6278179B1 (pt) |
EP (1) | EP1005089B1 (pt) |
JP (1) | JP2000164798A (pt) |
KR (1) | KR100578441B1 (pt) |
CN (1) | CN1187821C (pt) |
AT (1) | ATE381781T1 (pt) |
AU (1) | AU764576B2 (pt) |
CA (1) | CA2290801C (pt) |
DE (1) | DE69937781T2 (pt) |
DK (1) | DK1005089T3 (pt) |
ES (1) | ES2299235T3 (pt) |
FR (1) | FR2786655B1 (pt) |
PT (1) | PT1005089E (pt) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
JP2002026251A (ja) * | 2000-07-11 | 2002-01-25 | Toshiba Corp | 半導体装置 |
JP2002324875A (ja) * | 2001-04-26 | 2002-11-08 | Fuji Photo Film Co Ltd | 半導体パッケージ基台および半導体パッケージ |
JP3809346B2 (ja) | 2001-06-15 | 2006-08-16 | トヨタ自動車株式会社 | スイッチング回路 |
FR2834829B1 (fr) * | 2002-01-17 | 2005-04-29 | Alstom | Convertisseur matriciel pour la transformation d'energie electrique |
DE10202095A1 (de) * | 2002-01-21 | 2003-07-24 | Siemens Ag | Elektrisches Gerät |
CN1653297B (zh) * | 2002-05-08 | 2010-09-29 | 佛森技术公司 | 高效固态光源及其使用和制造方法 |
US6680532B1 (en) * | 2002-10-07 | 2004-01-20 | Lsi Logic Corporation | Multi chip module |
US7042086B2 (en) | 2002-10-16 | 2006-05-09 | Nissan Motor Co., Ltd. | Stacked semiconductor module and assembling method of the same |
JP2005094842A (ja) * | 2003-09-12 | 2005-04-07 | Toshiba Corp | インバータ装置及びその製造方法 |
JP4491244B2 (ja) * | 2004-01-07 | 2010-06-30 | 三菱電機株式会社 | 電力半導体装置 |
US7210304B2 (en) * | 2005-02-09 | 2007-05-01 | General Motors Corporation | Cooling arrangements for integrated electric motor-inverters |
JP4478049B2 (ja) * | 2005-03-15 | 2010-06-09 | 三菱電機株式会社 | 半導体装置 |
JP2008218688A (ja) * | 2007-03-05 | 2008-09-18 | Denso Corp | 半導体装置 |
JP4580036B1 (ja) * | 2009-06-12 | 2010-11-10 | 株式会社神戸製鋼所 | バスバーおよびコネクタ |
CN101944835B (zh) * | 2009-07-03 | 2013-08-28 | 王小云 | 高功率大电流输出的模块电源 |
JP5242629B2 (ja) * | 2010-05-10 | 2013-07-24 | 株式会社東芝 | 電力用半導体素子 |
CN102264200B (zh) * | 2011-07-01 | 2014-03-26 | 江苏宏微科技有限公司 | 智能功率模块 |
US8987777B2 (en) * | 2011-07-11 | 2015-03-24 | International Rectifier Corporation | Stacked half-bridge power module |
CN102435428A (zh) * | 2011-09-30 | 2012-05-02 | 广州高澜节能技术股份有限公司 | 一种模拟igbt模块发热的测试模块 |
US8752875B1 (en) | 2011-12-22 | 2014-06-17 | Michael J. Gerhardt | Electronic device holding system |
CN202799522U (zh) * | 2012-07-28 | 2013-03-13 | 中山大洋电机制造有限公司 | 一种电机控制器结构 |
US9673162B2 (en) * | 2012-09-13 | 2017-06-06 | Nxp Usa, Inc. | High power semiconductor package subsystems |
JP6102297B2 (ja) * | 2013-02-06 | 2017-03-29 | 富士電機株式会社 | 半導体装置 |
US9825437B2 (en) | 2014-06-04 | 2017-11-21 | Hamilton Sundstrand Corporation | Three-dimensional power distribution interconnect structure |
US9532448B1 (en) * | 2016-03-03 | 2016-12-27 | Ford Global Technologies, Llc | Power electronics modules |
FR3060845B1 (fr) * | 2016-12-19 | 2019-05-24 | Institut Vedecom | Circuits electroniques de puissance equipes de bus barres formant dissipateurs thermiques et procede d’integration |
GB2563186A (en) | 2017-01-30 | 2018-12-12 | Yasa Motors Ltd | Semiconductor arrangement |
GB2559180B (en) | 2017-01-30 | 2020-09-09 | Yasa Ltd | Semiconductor cooling arrangement |
WO2022088179A1 (en) * | 2020-11-02 | 2022-05-05 | Dynex Semiconductor Limited | High power density 3d semiconductor module packaging |
DE102021206935B4 (de) * | 2021-07-01 | 2024-01-25 | Vitesco Technologies Germany Gmbh | Leistungshalbbrückenmodul, Leistungsinverter, Verfahren zur Herstellung eines Leistungshalbbrückenmoduls |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019946A (en) * | 1988-09-27 | 1991-05-28 | General Electric Company | High density interconnect with high volumetric efficiency |
DE4403996A1 (de) * | 1994-02-09 | 1995-08-10 | Bosch Gmbh Robert | Gleichrichteranordnung für einen Drehstromgenerator |
US5532512A (en) * | 1994-10-03 | 1996-07-02 | General Electric Company | Direct stacked and flip chip power semiconductor device structures |
WO1998015005A1 (de) * | 1996-09-30 | 1998-04-09 | Siemens Aktiengesellschaft | Mikroelektronisches bauteil in sandwich-bauweise |
-
1998
- 1998-11-27 FR FR9815157A patent/FR2786655B1/fr not_active Expired - Lifetime
-
1999
- 1999-11-22 ES ES99402889T patent/ES2299235T3/es not_active Expired - Lifetime
- 1999-11-22 PT PT99402889T patent/PT1005089E/pt unknown
- 1999-11-22 EP EP99402889A patent/EP1005089B1/fr not_active Expired - Lifetime
- 1999-11-22 AT AT99402889T patent/ATE381781T1/de active
- 1999-11-22 DE DE69937781T patent/DE69937781T2/de not_active Expired - Lifetime
- 1999-11-22 DK DK99402889T patent/DK1005089T3/da active
- 1999-11-23 US US09/444,998 patent/US6278179B1/en not_active Expired - Lifetime
- 1999-11-23 AU AU59609/99A patent/AU764576B2/en not_active Expired
- 1999-11-24 CA CA002290801A patent/CA2290801C/fr not_active Expired - Lifetime
- 1999-11-26 CN CNB991243854A patent/CN1187821C/zh not_active Expired - Lifetime
- 1999-11-26 JP JP11335770A patent/JP2000164798A/ja active Pending
- 1999-11-26 KR KR1019990052867A patent/KR100578441B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DK1005089T3 (da) | 2008-05-05 |
EP1005089B1 (fr) | 2007-12-19 |
DE69937781T2 (de) | 2008-12-04 |
KR100578441B1 (ko) | 2006-05-11 |
ATE381781T1 (de) | 2008-01-15 |
AU5960999A (en) | 2000-06-01 |
ES2299235T3 (es) | 2008-05-16 |
EP1005089A1 (fr) | 2000-05-31 |
CN1187821C (zh) | 2005-02-02 |
KR20000035704A (ko) | 2000-06-26 |
CN1255749A (zh) | 2000-06-07 |
US6278179B1 (en) | 2001-08-21 |
AU764576B2 (en) | 2003-08-21 |
FR2786655B1 (fr) | 2001-11-23 |
DE69937781D1 (de) | 2008-01-31 |
FR2786655A1 (fr) | 2000-06-02 |
JP2000164798A (ja) | 2000-06-16 |
CA2290801A1 (fr) | 2000-05-27 |
CA2290801C (fr) | 2006-11-14 |
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