KR100578441B1 - 파워 전자 장치 - Google Patents
파워 전자 장치 Download PDFInfo
- Publication number
- KR100578441B1 KR100578441B1 KR1019990052867A KR19990052867A KR100578441B1 KR 100578441 B1 KR100578441 B1 KR 100578441B1 KR 1019990052867 A KR1019990052867 A KR 1019990052867A KR 19990052867 A KR19990052867 A KR 19990052867A KR 100578441 B1 KR100578441 B1 KR 100578441B1
- Authority
- KR
- South Korea
- Prior art keywords
- busbar
- conductive
- electronic device
- power electronic
- substrate
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inverter Devices (AREA)
- Emergency Protection Circuit Devices (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Power Conversion In General (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electronic Switches (AREA)
- Noodles (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (10)
- 다이오드와 절연 게이트형 바이폴라 트랜지스터로 형성되고 접속 단자를 갖는 반도체 회로의 제1 면 구성부(plane arrangement)가 그 상부에 배치되어 있는 도전성 기판을 포함하는 파워 전자 장치에 있어서,상기 장치는 적어도 하나의 반도체 회로의 제2 면 구성부를 포함하고, 2개의 인접한 면 구성부들은 상기 제1 면 구성부의 회로의 단자에 접속된 적어도 하나의 도전성 및 열 소산성 버스바를 포함하는 평면 도체 어레이에 의해 분리되고, 상기 버스바는 또한 상기 기판에 대향하는 면에서 제2 면 구성부의 회로를 지지하고, 버스바로부터 전기적으로 절연된 적어도 하나의 도전성 부재가 상기 제1 구성부의 회로의 다른 단자에 접속되고 버스바의 체적 내에 배치되는 것을 특징으로 하는 파워 전자 장치.
- 제1항에 있어서, 반도체 회로의 단면 구성부(end plane arrangement)는, 상기 단면 구성부의 회로의 단자를 접속하는 적어도 하나의 도전성 및 열 소산성 단부 버스바 및 상기 단면 구성부의 회로의 다른 단자에 접속된 상기 단면 버스바로부터 전기적으로 절연되고 상기 버스바의 체적 내에 있는 적어도 하나의 단부 도체 부재를 포함하는 단면 도체 어레이에 의해 덮여지는 것을 특징으로 하는 파워 전자 장치.
- 제1항에 있어서, 상기 면 구성부의 단자는 적어도 하나의 주석-납-은 보스를 쏠더링함으로써 각 면 어레이에 고정되는 것을 특징으로 하는 파워 전자 장치.
- 제3항에 있어서, 상기 단자들은 보스 또는 각 보스에 고착된, 특히 티타늄-니켈-골드 퇴적물로된 코팅에 의해 보스 또는 각 보스로부터 분리되는 것을 특징으로 하는 파워 전자 장치.
- 제1항에 있어서, 상기 적어도 하나의 도전성 버스바는 적어도 하나의 숄더를 가짐으로써 상기 기판과 평행만 면에서 포괄적으로 연장되는 것을 특징으로 하는 파워 전자 장치.
- 제2항에 있어서, 상기 기판 및 상기 단부 버스바는 각 열 전달 및 절연 복합 구조물의 일부인 것을 특징으로 하는 파워 전자 장치.
- 제1항에 있어서, 상기 도전성 버스바는 상기 도전성 부재를 수용하는 노치를 갖는 것을 특징으로 하는 파워 전자 장치.
- 제2항에 있어서, 인버터 아암을 형성하고 동일한 제1 및 제2 면 구성부와 제1 및 제2 면 도체 어레이를 포함하는 것을 특징으로 하는 파워 전자 장치.
- 제8항에 있어서, 각각의 상기 면 어레이들은 일련의 절연 게이트형 바이폴라 트랜지스터의 행에 공통인 적어도 하나의 게이트를 포함하는 것을 특징으로 하는 파워 전자 장치.
- 제8항에 있어서, 상기 제1면 어레이와 상기 제2면 어레이의 상기 도전성 버스바는 상기 제1면 구성부와 상기 제2면 구성부 각각의 절연 게이트형 바이폴라 트랜지스터에 공통인 에미터를 형성하는 것을 특징으로 하는 파워 전자 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9815157 | 1998-11-27 | ||
FR9815157A FR2786655B1 (fr) | 1998-11-27 | 1998-11-27 | Dispositif electronique de puissance |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000035704A KR20000035704A (ko) | 2000-06-26 |
KR100578441B1 true KR100578441B1 (ko) | 2006-05-11 |
Family
ID=9533443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990052867A KR100578441B1 (ko) | 1998-11-27 | 1999-11-26 | 파워 전자 장치 |
Country Status (13)
Country | Link |
---|---|
US (1) | US6278179B1 (ko) |
EP (1) | EP1005089B1 (ko) |
JP (1) | JP2000164798A (ko) |
KR (1) | KR100578441B1 (ko) |
CN (1) | CN1187821C (ko) |
AT (1) | ATE381781T1 (ko) |
AU (1) | AU764576B2 (ko) |
CA (1) | CA2290801C (ko) |
DE (1) | DE69937781T2 (ko) |
DK (1) | DK1005089T3 (ko) |
ES (1) | ES2299235T3 (ko) |
FR (1) | FR2786655B1 (ko) |
PT (1) | PT1005089E (ko) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
JP2002026251A (ja) * | 2000-07-11 | 2002-01-25 | Toshiba Corp | 半導体装置 |
JP2002324875A (ja) * | 2001-04-26 | 2002-11-08 | Fuji Photo Film Co Ltd | 半導体パッケージ基台および半導体パッケージ |
JP3809346B2 (ja) * | 2001-06-15 | 2006-08-16 | トヨタ自動車株式会社 | スイッチング回路 |
FR2834829B1 (fr) * | 2002-01-17 | 2005-04-29 | Alstom | Convertisseur matriciel pour la transformation d'energie electrique |
DE10202095A1 (de) * | 2002-01-21 | 2003-07-24 | Siemens Ag | Elektrisches Gerät |
EP1508157B1 (en) * | 2002-05-08 | 2011-11-23 | Phoseon Technology, Inc. | High efficiency solid-state light source and methods of use and manufacture |
US6680532B1 (en) * | 2002-10-07 | 2004-01-20 | Lsi Logic Corporation | Multi chip module |
US7042086B2 (en) | 2002-10-16 | 2006-05-09 | Nissan Motor Co., Ltd. | Stacked semiconductor module and assembling method of the same |
JP2005094842A (ja) * | 2003-09-12 | 2005-04-07 | Toshiba Corp | インバータ装置及びその製造方法 |
JP4491244B2 (ja) * | 2004-01-07 | 2010-06-30 | 三菱電機株式会社 | 電力半導体装置 |
US7210304B2 (en) * | 2005-02-09 | 2007-05-01 | General Motors Corporation | Cooling arrangements for integrated electric motor-inverters |
JP4478049B2 (ja) * | 2005-03-15 | 2010-06-09 | 三菱電機株式会社 | 半導体装置 |
JP2008218688A (ja) * | 2007-03-05 | 2008-09-18 | Denso Corp | 半導体装置 |
JP4580036B1 (ja) * | 2009-06-12 | 2010-11-10 | 株式会社神戸製鋼所 | バスバーおよびコネクタ |
CN101944835B (zh) * | 2009-07-03 | 2013-08-28 | 王小云 | 高功率大电流输出的模块电源 |
JP5242629B2 (ja) * | 2010-05-10 | 2013-07-24 | 株式会社東芝 | 電力用半導体素子 |
CN102264200B (zh) * | 2011-07-01 | 2014-03-26 | 江苏宏微科技有限公司 | 智能功率模块 |
US8987777B2 (en) * | 2011-07-11 | 2015-03-24 | International Rectifier Corporation | Stacked half-bridge power module |
CN102435428A (zh) * | 2011-09-30 | 2012-05-02 | 广州高澜节能技术股份有限公司 | 一种模拟igbt模块发热的测试模块 |
US8752875B1 (en) | 2011-12-22 | 2014-06-17 | Michael J. Gerhardt | Electronic device holding system |
CN202799522U (zh) * | 2012-07-28 | 2013-03-13 | 中山大洋电机制造有限公司 | 一种电机控制器结构 |
US9673162B2 (en) * | 2012-09-13 | 2017-06-06 | Nxp Usa, Inc. | High power semiconductor package subsystems |
JP6102297B2 (ja) * | 2013-02-06 | 2017-03-29 | 富士電機株式会社 | 半導体装置 |
US9825437B2 (en) | 2014-06-04 | 2017-11-21 | Hamilton Sundstrand Corporation | Three-dimensional power distribution interconnect structure |
US9532448B1 (en) * | 2016-03-03 | 2016-12-27 | Ford Global Technologies, Llc | Power electronics modules |
FR3060845B1 (fr) * | 2016-12-19 | 2019-05-24 | Institut Vedecom | Circuits electroniques de puissance equipes de bus barres formant dissipateurs thermiques et procede d’integration |
GB2559180B (en) | 2017-01-30 | 2020-09-09 | Yasa Ltd | Semiconductor cooling arrangement |
GB2563186A (en) * | 2017-01-30 | 2018-12-12 | Yasa Motors Ltd | Semiconductor arrangement |
US20220352137A1 (en) * | 2020-11-02 | 2022-11-03 | Dynex Semiconductor Limited | High power density 3d semiconductor module packaging |
DE102021206935B4 (de) * | 2021-07-01 | 2024-01-25 | Vitesco Technologies Germany Gmbh | Leistungshalbbrückenmodul, Leistungsinverter, Verfahren zur Herstellung eines Leistungshalbbrückenmoduls |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019946A (en) * | 1988-09-27 | 1991-05-28 | General Electric Company | High density interconnect with high volumetric efficiency |
DE4403996A1 (de) * | 1994-02-09 | 1995-08-10 | Bosch Gmbh Robert | Gleichrichteranordnung für einen Drehstromgenerator |
US5532512A (en) * | 1994-10-03 | 1996-07-02 | General Electric Company | Direct stacked and flip chip power semiconductor device structures |
WO1998015005A1 (de) * | 1996-09-30 | 1998-04-09 | Siemens Aktiengesellschaft | Mikroelektronisches bauteil in sandwich-bauweise |
-
1998
- 1998-11-27 FR FR9815157A patent/FR2786655B1/fr not_active Expired - Lifetime
-
1999
- 1999-11-22 DE DE69937781T patent/DE69937781T2/de not_active Expired - Lifetime
- 1999-11-22 AT AT99402889T patent/ATE381781T1/de active
- 1999-11-22 PT PT99402889T patent/PT1005089E/pt unknown
- 1999-11-22 DK DK99402889T patent/DK1005089T3/da active
- 1999-11-22 EP EP99402889A patent/EP1005089B1/fr not_active Expired - Lifetime
- 1999-11-22 ES ES99402889T patent/ES2299235T3/es not_active Expired - Lifetime
- 1999-11-23 US US09/444,998 patent/US6278179B1/en not_active Expired - Lifetime
- 1999-11-23 AU AU59609/99A patent/AU764576B2/en not_active Expired
- 1999-11-24 CA CA002290801A patent/CA2290801C/fr not_active Expired - Lifetime
- 1999-11-26 CN CNB991243854A patent/CN1187821C/zh not_active Expired - Lifetime
- 1999-11-26 KR KR1019990052867A patent/KR100578441B1/ko active IP Right Grant
- 1999-11-26 JP JP11335770A patent/JP2000164798A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1187821C (zh) | 2005-02-02 |
CA2290801C (fr) | 2006-11-14 |
US6278179B1 (en) | 2001-08-21 |
KR20000035704A (ko) | 2000-06-26 |
AU764576B2 (en) | 2003-08-21 |
FR2786655A1 (fr) | 2000-06-02 |
DK1005089T3 (da) | 2008-05-05 |
JP2000164798A (ja) | 2000-06-16 |
ATE381781T1 (de) | 2008-01-15 |
CN1255749A (zh) | 2000-06-07 |
AU5960999A (en) | 2000-06-01 |
DE69937781D1 (de) | 2008-01-31 |
FR2786655B1 (fr) | 2001-11-23 |
ES2299235T3 (es) | 2008-05-16 |
PT1005089E (pt) | 2008-03-27 |
EP1005089A1 (fr) | 2000-05-31 |
DE69937781T2 (de) | 2008-12-04 |
CA2290801A1 (fr) | 2000-05-27 |
EP1005089B1 (fr) | 2007-12-19 |
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