PL3092323T3 - Sposób osadzania z fazy gazowej do wytwarzania amorficznych związków zawierających lit - Google Patents

Sposób osadzania z fazy gazowej do wytwarzania amorficznych związków zawierających lit

Info

Publication number
PL3092323T3
PL3092323T3 PL15700152T PL15700152T PL3092323T3 PL 3092323 T3 PL3092323 T3 PL 3092323T3 PL 15700152 T PL15700152 T PL 15700152T PL 15700152 T PL15700152 T PL 15700152T PL 3092323 T3 PL3092323 T3 PL 3092323T3
Authority
PL
Poland
Prior art keywords
deposition method
containing compounds
vapour deposition
preparing amorphous
amorphous lithium
Prior art date
Application number
PL15700152T
Other languages
English (en)
Inventor
Brian Elliott Hayden
Duncan Clifford Alan Smith
Christopher Edward Lee
Alexandros Anastasopoulos
Chihiro Yada
Laura Mary PERKINS
David Michael LAUGHMAN
Original Assignee
Ilika Technologies Limited
Toyota Motor Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ilika Technologies Limited, Toyota Motor Corporation filed Critical Ilika Technologies Limited
Publication of PL3092323T3 publication Critical patent/PL3092323T3/pl

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/18—Compositions for glass with special properties for ion-sensitive glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562—Solid materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2300/00—Electrolytes
    • H01M2300/0017—Non-aqueous electrolytes
    • H01M2300/0065—Solid electrolytes
    • H01M2300/0068—Solid electrolytes inorganic
    • H01M2300/0071—Oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Electrochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Secondary Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Physical Vapour Deposition (AREA)
PL15700152T 2014-01-08 2015-01-07 Sposób osadzania z fazy gazowej do wytwarzania amorficznych związków zawierających lit PL3092323T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1400274.5A GB201400274D0 (en) 2014-01-08 2014-01-08 Vapour deposition method for preparing amorphous lithium-containing compounds
PCT/GB2015/050015 WO2015104540A1 (en) 2014-01-08 2015-01-07 Vapour deposition method for preparing amorphous lithium-containing compounds
EP15700152.0A EP3092323B1 (en) 2014-01-08 2015-01-07 Vapour deposition method for preparing amorphous lithium-containing compounds

Publications (1)

Publication Number Publication Date
PL3092323T3 true PL3092323T3 (pl) 2018-04-30

Family

ID=50191044

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15700152T PL3092323T3 (pl) 2014-01-08 2015-01-07 Sposób osadzania z fazy gazowej do wytwarzania amorficznych związków zawierających lit

Country Status (11)

Country Link
US (1) US10865480B2 (pl)
EP (3) EP3092323B1 (pl)
JP (1) JP6234594B2 (pl)
KR (2) KR102186449B1 (pl)
CN (2) CN105917018B (pl)
DK (1) DK3092323T3 (pl)
ES (1) ES2655288T3 (pl)
GB (1) GB201400274D0 (pl)
NO (1) NO3092323T3 (pl)
PL (1) PL3092323T3 (pl)
WO (1) WO2015104540A1 (pl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201400274D0 (en) 2014-01-08 2014-02-26 Ilika Technologies Ltd Vapour deposition method for preparing amorphous lithium-containing compounds
GB201400276D0 (en) 2014-01-08 2014-02-26 Ilika Technologies Ltd Vapour deposition method for fabricating lithium-containing thin film layered structures
KR102435872B1 (ko) * 2016-06-15 2022-08-23 이리카 테크놀로지스 리미티드 전해질 및 전극 보호층으로서의 리튬 보로실리케이트 유리
US11152613B2 (en) * 2018-01-19 2021-10-19 Amprius, Inc. Stabilized, prelithiated silicon oxide particles for lithium ion battery anodes
GB2572608A (en) 2018-04-03 2019-10-09 Ilika Tech Ltd Laser processing method for thin film structures
GB201814039D0 (en) * 2018-08-29 2018-10-10 Ilika Tech Ltd Method
TW202120432A (zh) * 2019-10-08 2021-06-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於沉積含鋰層、島或簇的鋰前驅體
GB2589626A (en) * 2019-12-05 2021-06-09 Ilika Tech Ltd Method
KR102529895B1 (ko) * 2021-06-28 2023-05-08 주식회사 비이아이랩 우수한 이온 전도도를 나타내는 비정질 황화물의 제조방법

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210869A (en) 1975-07-15 1977-01-27 Toshinori Takagi Thin film forming method
US4933058A (en) 1986-01-23 1990-06-12 The Gillette Company Formation of hard coatings on cutting edges
JPS6335493A (ja) 1986-07-31 1988-02-16 Nippon Telegr & Teleph Corp <Ntt> 複合酸化物薄膜の製造方法
US4888202A (en) 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
JPH0637351B2 (ja) 1988-06-14 1994-05-18 シャープ株式会社 強誘電体薄膜の製造方法
JPH049748A (ja) 1990-04-27 1992-01-14 Sharp Corp ニオブ酸リチウム薄膜の評価方法およびその製造装置
JPH0784646B2 (ja) 1990-11-20 1995-09-13 日本電気株式会社 誘電体薄膜の成膜方法
US5338625A (en) * 1992-07-29 1994-08-16 Martin Marietta Energy Systems, Inc. Thin film battery and method for making same
JPH08329944A (ja) 1995-05-31 1996-12-13 Nippondenso Co Ltd 非水電解質二次電池用正極活物質の製造方法
US5730852A (en) 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
US6017654A (en) 1997-08-04 2000-01-25 Carnegie Mellon University Cathode materials for lithium-ion secondary cells
US6982132B1 (en) 1997-10-15 2006-01-03 Trustees Of Tufts College Rechargeable thin film battery and method for making the same
WO2001073865A2 (en) 2000-03-24 2001-10-04 Cymbet Corporation Continuous processing of thin-film batteries and like devices
US6632563B1 (en) 2000-09-07 2003-10-14 Front Edge Technology, Inc. Thin film battery and method of manufacture
US6863699B1 (en) 2000-11-03 2005-03-08 Front Edge Technology, Inc. Sputter deposition of lithium phosphorous oxynitride material
JP4249616B2 (ja) * 2001-09-03 2009-04-02 パナソニック株式会社 電気化学素子の製造方法
JP2003277915A (ja) 2002-03-26 2003-10-02 Matsushita Electric Ind Co Ltd 薄膜の製造方法及び製造装置
US20030186128A1 (en) 2002-03-29 2003-10-02 Deepika Singh Lithium-based rechargeable batteries
KR100533934B1 (ko) 2002-06-07 2005-12-06 강원대학교산학협력단 리튬 이차 전지용 고체 전해질 및 그 제조 방법
WO2004093223A2 (en) 2003-04-14 2004-10-28 Massachusetts Institute Of Technology Integrated thin film batteries on silicon integrated circuits
KR20040098139A (ko) * 2003-05-13 2004-11-20 강원대학교산학협력단 박막 고체 전해질 및 그 제조 방법
JP3677509B2 (ja) 2003-06-27 2005-08-03 松下電器産業株式会社 固体電解質およびそれを用いた全固体電池
US6886240B2 (en) 2003-07-11 2005-05-03 Excellatron Solid State, Llc Apparatus for producing thin-film electrolyte
GB2406860A (en) 2003-10-09 2005-04-13 Univ Southampton Vapour deposition method
JP2006120437A (ja) * 2004-10-21 2006-05-11 Matsushita Electric Ind Co Ltd 固体電解質電池
EP1900845B1 (en) 2004-12-08 2016-05-04 Sapurast Research LLC Deposition of LiCoO2
US7883800B2 (en) * 2005-01-27 2011-02-08 Centre National De La Recherche Scientifique Lithium ion conducting lithium sulphur oxynitride thin film, and a process for the preparation thereof
US7993782B2 (en) * 2005-07-01 2011-08-09 National Institute For Materials Science All-solid lithium battery
CN101479403A (zh) 2006-04-14 2009-07-08 硅石技术责任有限公司 用于制作太阳能电池的等离子沉积设备和方法
KR100836256B1 (ko) * 2006-07-03 2008-06-10 (주)누리셀 엘비더블유오계 리튬 이온 전도성 산화물 고체전해질
KR20090125256A (ko) * 2007-03-26 2009-12-04 사임베트 코퍼레이션 리튬 막박 전지용 기재
US8372250B2 (en) * 2007-07-23 2013-02-12 National Science And Technology Development Agency Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering
US8628645B2 (en) 2007-09-04 2014-01-14 Front Edge Technology, Inc. Manufacturing method for thin film battery
US20100261071A1 (en) 2009-04-13 2010-10-14 Applied Materials, Inc. Metallized fibers for electrochemical energy storage
JP2011113796A (ja) * 2009-11-26 2011-06-09 Nippon Chem Ind Co Ltd リチウム二次電池用活物質およびこれを用いたリチウム二次電池
CN102859779B (zh) 2010-04-13 2016-10-19 丰田自动车株式会社 固体电解质材料、锂电池以及固体电解质材料的制造方法
US10770745B2 (en) 2011-11-09 2020-09-08 Sakti3, Inc. Monolithically integrated thin-film solid state lithium battery device having multiple layers of lithium electrochemical cells
CN102867949B (zh) 2011-07-04 2015-09-30 微宏动力系统（湖州）有限公司 锂离子二次电池正极材料及其制备方法
GB2493022B (en) 2011-07-21 2014-04-23 Ilika Technologies Ltd Vapour deposition process for the preparation of a phosphate compound
GB2493020B (en) 2011-07-21 2014-04-23 Ilika Technologies Ltd Vapour deposition process for the preparation of a chemical compound
US9127344B2 (en) 2011-11-08 2015-09-08 Sakti3, Inc. Thermal evaporation process for manufacture of solid state battery devices
JP2013151721A (ja) * 2012-01-25 2013-08-08 Toyota Motor Corp 固体電解質膜の製造方法
JP6156713B2 (ja) 2012-03-07 2017-07-05 日産自動車株式会社 正極活物質、電気デバイス用正極及び電気デバイス
DE102012015802A1 (de) 2012-08-10 2014-02-13 Thyssenkrupp Uhde Gmbh Verfahren zur Herstellung von Elektrolysezellen-Kontaktstreifen
GB201400277D0 (en) 2014-01-08 2014-02-26 Ilika Technologies Ltd Vapour deposition method for preparing crystalline lithium-containing compounds
GB201400274D0 (en) 2014-01-08 2014-02-26 Ilika Technologies Ltd Vapour deposition method for preparing amorphous lithium-containing compounds

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US20160340784A1 (en) 2016-11-24
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