PL229786A1 - - Google Patents

Info

Publication number
PL229786A1
PL229786A1 PL22978681A PL22978681A PL229786A1 PL 229786 A1 PL229786 A1 PL 229786A1 PL 22978681 A PL22978681 A PL 22978681A PL 22978681 A PL22978681 A PL 22978681A PL 229786 A1 PL229786 A1 PL 229786A1
Authority
PL
Poland
Application number
PL22978681A
Other versions
PL136606B1 (en
Inventor
Alvin M Goodman
Ramon U Martinelii
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of PL229786A1 publication Critical patent/PL229786A1/xx
Publication of PL136606B1 publication Critical patent/PL136606B1/pl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
PL1981229786A 1980-02-22 1981-02-20 Mosfet device of vertical structure PL136606B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
PL229786A1 true PL229786A1 (de) 1981-09-18
PL136606B1 PL136606B1 (en) 1986-03-31

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1981229786A PL136606B1 (en) 1980-02-22 1981-02-20 Mosfet device of vertical structure

Country Status (8)

Country Link
JP (1) JPS56131961A (de)
DE (1) DE3105693A1 (de)
FR (1) FR2476914B1 (de)
GB (1) GB2070331B (de)
IT (1) IT1135091B (de)
PL (1) PL136606B1 (de)
SE (1) SE456291B (de)
YU (1) YU41520B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
DE3210353A1 (de) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte darlingtonschaltung
EP0205639A1 (de) * 1985-06-25 1986-12-30 Eaton Corporation Bidirektionaler Leistungsfeldeffekttransistor mit substratbezogener Feldplatte
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
EP0207178A1 (de) * 1985-06-25 1987-01-07 Eaton Corporation Bidirektionaler Leistungsfeldeffekttransistor mit Feldstaltung
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
EP0205640A1 (de) * 1985-06-25 1986-12-30 Eaton Corporation Lateraler bidirektionaler Feldeffekttransistor mit einem Einschnitt und einer Feldplatte
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
CN100508211C (zh) * 2003-01-21 2009-07-01 西北大学 快速开关功率绝缘栅半导体器件
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
CN102569385B (zh) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos结构及其制备方法
CN102569386B (zh) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (de) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
YU42481A (en) 1983-06-30
YU41520B (en) 1987-08-31
IT8119216A0 (it) 1981-01-20
IT1135091B (it) 1986-08-20
GB2070331A (en) 1981-09-03
JPS56131961A (en) 1981-10-15
SE8100148L (sv) 1981-08-23
SE456291B (sv) 1988-09-19
PL136606B1 (en) 1986-03-31
DE3105693C2 (de) 1992-12-10
GB2070331B (en) 1984-05-23
JPH0213830B2 (de) 1990-04-05
FR2476914B1 (fr) 1985-10-18
DE3105693A1 (de) 1981-11-26
FR2476914A1 (fr) 1981-08-28

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