PL1704599T3 - Metoda obróbki ziaren proszku - Google Patents

Metoda obróbki ziaren proszku

Info

Publication number
PL1704599T3
PL1704599T3 PL04803855T PL04803855T PL1704599T3 PL 1704599 T3 PL1704599 T3 PL 1704599T3 PL 04803855 T PL04803855 T PL 04803855T PL 04803855 T PL04803855 T PL 04803855T PL 1704599 T3 PL1704599 T3 PL 1704599T3
Authority
PL
Poland
Prior art keywords
powder grains
processing powder
sulfur
compound
powder
Prior art date
Application number
PL04803855T
Other languages
English (en)
Inventor
Volker Geyer
Marit Kauk
Jaan Raudoja
Tiit Varema
Mare Altosaar
Original Assignee
Scheuten Glasgroep Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Scheuten Glasgroep Bv filed Critical Scheuten Glasgroep Bv
Publication of PL1704599T3 publication Critical patent/PL1704599T3/pl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Glanulating (AREA)
  • Cereal-Derived Products (AREA)
  • Nonmetallic Welding Materials (AREA)
  • Seeds, Soups, And Other Foods (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
PL04803855T 2003-12-22 2004-12-14 Metoda obróbki ziaren proszku PL1704599T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP03029577A EP1548845B1 (de) 2003-12-22 2003-12-22 Verfahren zur Behandlung von Pulverkörner
EP04803855A EP1704599B1 (de) 2003-12-22 2004-12-14 Verfahren zur behandlung von pulverkörnern
PCT/EP2004/014232 WO2005064691A1 (de) 2003-12-22 2004-12-14 Verfahren zur behandlung von pulverkörnern

Publications (1)

Publication Number Publication Date
PL1704599T3 true PL1704599T3 (pl) 2008-03-31

Family

ID=34530696

Family Applications (1)

Application Number Title Priority Date Filing Date
PL04803855T PL1704599T3 (pl) 2003-12-22 2004-12-14 Metoda obróbki ziaren proszku

Country Status (14)

Country Link
US (1) US20070113888A1 (pl)
EP (2) EP1548845B1 (pl)
JP (1) JP2007515371A (pl)
KR (1) KR100851043B1 (pl)
CN (1) CN100461460C (pl)
AT (1) ATE348408T1 (pl)
CA (1) CA2547352A1 (pl)
DE (1) DE50305977D1 (pl)
DK (1) DK1548845T3 (pl)
ES (1) ES2279057T3 (pl)
PL (1) PL1704599T3 (pl)
PT (1) PT1548845E (pl)
SI (1) SI1548845T1 (pl)
WO (1) WO2005064691A1 (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008040147A1 (de) 2008-07-03 2010-01-28 Crystalsol Og Verfahren zur Herstellung einer Monokornmembran für eine Solarzelle sowie Monokornmembran nebst Solarzelle

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2071287A5 (pl) * 1969-12-23 1971-09-17 Rhone Poulenc Sa
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
JPS61263286A (ja) * 1985-05-10 1986-11-21 ハ−ン − マイトネル − インスチツ−ト・ベルリン・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング CuInS2−半導体材料をベ−スとするホトアノ−ドを有する太陽電池及びその製法
KR960003800B1 (ko) * 1988-02-19 1996-03-22 가와사끼 세이데쓰 가부시끼가이샤 고순도 금속 규소의 제조방법
JPH04326526A (ja) * 1991-04-25 1992-11-16 Dowa Mining Co Ltd CuIn(Se1−xSx)2混晶薄膜の製造法
US5356839A (en) * 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
WO1994027328A1 (en) * 1993-05-07 1994-11-24 Siemens Solar Industries International, Inc. Process for at least partially converting semi-conductor films of the i-iii-vi2-type
JPH0789719A (ja) * 1993-09-20 1995-04-04 Hitachi Maxell Ltd 銅インジウム硫化物またはセレン化物の製造法
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
JP3589380B2 (ja) * 1997-06-05 2004-11-17 松下電器産業株式会社 半導体薄膜の製造方法および薄膜太陽電池の製造方法
JP2001517493A (ja) * 1997-09-26 2001-10-09 ノーヴェン ファーマシューティカルズ インコーポレイテッド 生体接着剤組成物及び活性薬剤の局所投与方法
DE19828310C2 (de) * 1998-06-25 2000-08-31 Forschungszentrum Juelich Gmbh Einkristallpulver- und Monokornmembranherstellung
US7019208B2 (en) * 2001-11-20 2006-03-28 Energy Photovoltaics Method of junction formation for CIGS photovoltaic devices

Also Published As

Publication number Publication date
KR20070015510A (ko) 2007-02-05
CN1890817A (zh) 2007-01-03
CA2547352A1 (en) 2005-07-14
JP2007515371A (ja) 2007-06-14
PT1548845E (pt) 2007-03-30
EP1704599B1 (de) 2007-10-31
ES2279057T3 (es) 2007-08-16
DE50305977D1 (de) 2007-01-25
EP1548845A1 (de) 2005-06-29
DK1548845T3 (da) 2008-05-19
CN100461460C (zh) 2009-02-11
KR100851043B1 (ko) 2008-08-12
SI1548845T1 (sl) 2007-06-30
ATE348408T1 (de) 2007-01-15
EP1548845B1 (de) 2006-12-13
WO2005064691A1 (de) 2005-07-14
US20070113888A1 (en) 2007-05-24
EP1704599A1 (de) 2006-09-27

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