PL1704599T3 - Metoda obróbki ziaren proszku - Google Patents
Metoda obróbki ziaren proszkuInfo
- Publication number
- PL1704599T3 PL1704599T3 PL04803855T PL04803855T PL1704599T3 PL 1704599 T3 PL1704599 T3 PL 1704599T3 PL 04803855 T PL04803855 T PL 04803855T PL 04803855 T PL04803855 T PL 04803855T PL 1704599 T3 PL1704599 T3 PL 1704599T3
- Authority
- PL
- Poland
- Prior art keywords
- powder particles
- treating powder
- sulfur
- compound
- treating
- Prior art date
Links
- 239000000843 powder Substances 0.000 title abstract 3
- 239000002245 particle Substances 0.000 title 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910052717 sulfur Inorganic materials 0.000 abstract 2
- 239000011593 sulfur Substances 0.000 abstract 2
- 239000008187 granular material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03029577A EP1548845B1 (de) | 2003-12-22 | 2003-12-22 | Verfahren zur Behandlung von Pulverkörner |
| PCT/EP2004/014232 WO2005064691A1 (de) | 2003-12-22 | 2004-12-14 | Verfahren zur behandlung von pulverkörnern |
| EP04803855A EP1704599B1 (de) | 2003-12-22 | 2004-12-14 | Verfahren zur behandlung von pulverkörnern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL1704599T3 true PL1704599T3 (pl) | 2008-03-31 |
Family
ID=34530696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL04803855T PL1704599T3 (pl) | 2003-12-22 | 2004-12-14 | Metoda obróbki ziaren proszku |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US20070113888A1 (pl) |
| EP (2) | EP1548845B1 (pl) |
| JP (1) | JP2007515371A (pl) |
| KR (1) | KR100851043B1 (pl) |
| CN (1) | CN100461460C (pl) |
| AT (1) | ATE348408T1 (pl) |
| CA (1) | CA2547352A1 (pl) |
| DE (1) | DE50305977D1 (pl) |
| DK (1) | DK1548845T3 (pl) |
| ES (1) | ES2279057T3 (pl) |
| PL (1) | PL1704599T3 (pl) |
| PT (1) | PT1548845E (pl) |
| SI (1) | SI1548845T1 (pl) |
| WO (1) | WO2005064691A1 (pl) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008040147A1 (de) | 2008-07-03 | 2010-01-28 | Crystalsol Og | Verfahren zur Herstellung einer Monokornmembran für eine Solarzelle sowie Monokornmembran nebst Solarzelle |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2071287A5 (pl) * | 1969-12-23 | 1971-09-17 | Rhone Poulenc Sa | |
| US4335266A (en) * | 1980-12-31 | 1982-06-15 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
| US4581108A (en) * | 1984-01-06 | 1986-04-08 | Atlantic Richfield Company | Process of forming a compound semiconductive material |
| JPS61263286A (ja) * | 1985-05-10 | 1986-11-21 | ハ−ン − マイトネル − インスチツ−ト・ベルリン・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | ＣｕＩｎＳ２−半導体材料をベ−スとするホトアノ−ドを有する太陽電池及びその製法 |
| KR960003800B1 (ko) * | 1988-02-19 | 1996-03-22 | 가와사끼 세이데쓰 가부시끼가이샤 | 고순도 금속 규소의 제조방법 |
| JPH04326526A (ja) * | 1991-04-25 | 1992-11-16 | Dowa Mining Co Ltd | ＣｕＩｎ（Ｓｅ１−ｘＳｘ）２混晶薄膜の製造法 |
| US5356839A (en) * | 1993-04-12 | 1994-10-18 | Midwest Research Institute | Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization |
| WO1994027328A1 (en) * | 1993-05-07 | 1994-11-24 | Siemens Solar Industries International, Inc. | Process for at least partially converting semi-conductor films of the i-iii-vi2-type |
| JPH0789719A (ja) * | 1993-09-20 | 1995-04-04 | Hitachi Maxell Ltd | 銅インジウム硫化物またはセレン化物の製造法 |
| US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
| JP3589380B2 (ja) * | 1997-06-05 | 2004-11-17 | 松下電器産業株式会社 | 半導体薄膜の製造方法および薄膜太陽電池の製造方法 |
| EP1021204B1 (en) * | 1997-09-26 | 2005-12-28 | Noven Pharmaceuticals, Inc. | Bioadhesive compositions and methods for topical administration of active agents |
| DE19828310C2 (de) * | 1998-06-25 | 2000-08-31 | Forschungszentrum Juelich Gmbh | Einkristallpulver- und Monokornmembranherstellung |
| US7019208B2 (en) * | 2001-11-20 | 2006-03-28 | Energy Photovoltaics | Method of junction formation for CIGS photovoltaic devices |
-
2003
- 2003-12-22 AT AT03029577T patent/ATE348408T1/de active
- 2003-12-22 EP EP03029577A patent/EP1548845B1/de not_active Expired - Lifetime
- 2003-12-22 ES ES03029577T patent/ES2279057T3/es not_active Expired - Lifetime
- 2003-12-22 DE DE50305977T patent/DE50305977D1/de not_active Expired - Lifetime
- 2003-12-22 SI SI200330667T patent/SI1548845T1/sl unknown
- 2003-12-22 PT PT03029577T patent/PT1548845E/pt unknown
- 2003-12-22 DK DK03029577T patent/DK1548845T3/da active
-
2004
- 2004-12-14 WO PCT/EP2004/014232 patent/WO2005064691A1/de active IP Right Grant
- 2004-12-14 JP JP2006544314A patent/JP2007515371A/ja active Pending
- 2004-12-14 KR KR1020067014667A patent/KR100851043B1/ko not_active IP Right Cessation
- 2004-12-14 PL PL04803855T patent/PL1704599T3/pl unknown
- 2004-12-14 EP EP04803855A patent/EP1704599B1/de not_active Expired - Fee Related
- 2004-12-14 US US10/582,571 patent/US20070113888A1/en not_active Abandoned
- 2004-12-14 CN CNB200480036244XA patent/CN100461460C/zh not_active Expired - Fee Related
- 2004-12-14 CA CA002547352A patent/CA2547352A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007515371A (ja) | 2007-06-14 |
| EP1548845A1 (de) | 2005-06-29 |
| DE50305977D1 (de) | 2007-01-25 |
| DK1548845T3 (da) | 2008-05-19 |
| EP1548845B1 (de) | 2006-12-13 |
| WO2005064691A1 (de) | 2005-07-14 |
| CN100461460C (zh) | 2009-02-11 |
| EP1704599A1 (de) | 2006-09-27 |
| ES2279057T3 (es) | 2007-08-16 |
| EP1704599B1 (de) | 2007-10-31 |
| US20070113888A1 (en) | 2007-05-24 |
| PT1548845E (pt) | 2007-03-30 |
| KR20070015510A (ko) | 2007-02-05 |
| CA2547352A1 (en) | 2005-07-14 |
| ATE348408T1 (de) | 2007-01-15 |
| KR100851043B1 (ko) | 2008-08-12 |
| SI1548845T1 (sl) | 2007-06-30 |
| CN1890817A (zh) | 2007-01-03 |
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