PL120630B1 - Ccd control method and circuit therefortema upravlenija priborom so svjaz'ju po zarjadu - Google Patents

Ccd control method and circuit therefortema upravlenija priborom so svjaz'ju po zarjadu Download PDF

Info

Publication number
PL120630B1
PL120630B1 PL1978203913A PL20391378A PL120630B1 PL 120630 B1 PL120630 B1 PL 120630B1 PL 1978203913 A PL1978203913 A PL 1978203913A PL 20391378 A PL20391378 A PL 20391378A PL 120630 B1 PL120630 B1 PL 120630B1
Authority
PL
Poland
Prior art keywords
charge
potential
input
channel
region
Prior art date
Application number
PL1978203913A
Other languages
English (en)
Polish (pl)
Other versions
PL203913A1 (pl
Inventor
James E Carnes
Peter A Levine
Donald J Sauer
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of PL203913A1 publication Critical patent/PL203913A1/xx
Publication of PL120630B1 publication Critical patent/PL120630B1/pl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
PL1978203913A 1977-01-10 1978-01-10 Ccd control method and circuit therefortema upravlenija priborom so svjaz'ju po zarjadu PL120630B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75818477A 1977-01-10 1977-01-10

Publications (2)

Publication Number Publication Date
PL203913A1 PL203913A1 (pl) 1978-07-17
PL120630B1 true PL120630B1 (en) 1982-03-31

Family

ID=25050832

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1978203913A PL120630B1 (en) 1977-01-10 1978-01-10 Ccd control method and circuit therefortema upravlenija priborom so svjaz'ju po zarjadu

Country Status (16)

Country Link
JP (2) JPS5387675A (US06623731-20030923-C00012.png)
AU (1) AU511885B2 (US06623731-20030923-C00012.png)
BE (1) BE862760A (US06623731-20030923-C00012.png)
CA (1) CA1101994A (US06623731-20030923-C00012.png)
DE (1) DE2800893C2 (US06623731-20030923-C00012.png)
DK (1) DK149674C (US06623731-20030923-C00012.png)
ES (1) ES465682A1 (US06623731-20030923-C00012.png)
FI (1) FI72410C (US06623731-20030923-C00012.png)
FR (1) FR2377127A1 (US06623731-20030923-C00012.png)
GB (1) GB1579033A (US06623731-20030923-C00012.png)
IT (1) IT1089179B (US06623731-20030923-C00012.png)
NL (1) NL7800272A (US06623731-20030923-C00012.png)
NZ (1) NZ186177A (US06623731-20030923-C00012.png)
PL (1) PL120630B1 (US06623731-20030923-C00012.png)
SE (1) SE437438B (US06623731-20030923-C00012.png)
ZA (1) ZA7810B (US06623731-20030923-C00012.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139784A (en) * 1977-08-02 1979-02-13 Rca Corporation CCD Input circuits
US4158209A (en) * 1977-08-02 1979-06-12 Rca Corporation CCD comb filters
US4217605A (en) * 1978-08-02 1980-08-12 Rca Corporation Comb filter employing a charge transfer device with plural mutually proportioned signal charge inputs
JPS5528523A (en) * 1978-08-17 1980-02-29 Toshiba Corp Signal charge input system for charge transfer element
DE2836473A1 (de) * 1978-08-21 1980-03-06 Siemens Ag Ccd-eingangsschaltung nach dem fill and spill-prinzip
DE3138946A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum betrieb einer mit einem vorschalt-tiefpass versehenen ladungsverschiebeanordnung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986198A (en) * 1973-06-13 1976-10-12 Rca Corporation Introducing signal at low noise level to charge-coupled circuit
JPS5416838B2 (US06623731-20030923-C00012.png) * 1973-11-29 1979-06-25

Also Published As

Publication number Publication date
DE2800893A1 (de) 1978-07-13
FR2377127A1 (fr) 1978-08-04
AU3216678A (en) 1979-07-12
BE862760A (fr) 1978-05-02
NL7800272A (nl) 1978-07-12
FI780012A (fi) 1978-07-11
DK149674B (da) 1986-09-01
GB1579033A (en) 1980-11-12
IT1089179B (it) 1985-06-18
JPS5387675A (en) 1978-08-02
AU511885B2 (en) 1980-09-11
DE2800893C2 (de) 1982-10-14
JPS5829634B2 (ja) 1983-06-23
DK8878A (da) 1978-07-11
JPS56142670A (en) 1981-11-07
FI72410B (fi) 1987-01-30
ZA7810B (en) 1978-10-25
DK149674C (da) 1987-04-13
ES465682A1 (es) 1978-10-01
SE7800104L (sv) 1978-07-11
JPS5649460B2 (US06623731-20030923-C00012.png) 1981-11-21
FI72410C (fi) 1987-05-11
NZ186177A (en) 1981-03-16
PL203913A1 (pl) 1978-07-17
FR2377127B1 (US06623731-20030923-C00012.png) 1982-04-30
CA1101994A (en) 1981-05-26
SE437438B (sv) 1985-02-25

Similar Documents

Publication Publication Date Title
US4945393A (en) Floating gate memory circuit and apparatus
US4905063A (en) Floating gate memories
US4104675A (en) Moderate field hole and electron injection from one interface of MIM or MIS structures
Hynecek Virtual phase technology: A new approach to fabrication of large-area CCD's
US4074302A (en) Bulk channel charge coupled semiconductor devices
US4197469A (en) Capacitively coupled array of photodetectors
US5677637A (en) Logic device using single electron coulomb blockade techniques
PL120630B1 (en) Ccd control method and circuit therefortema upravlenija priborom so svjaz'ju po zarjadu
DE2455798A1 (de) Speichervorrichtung mit strahlungs- ladungsuebertragung
EP0674798A1 (en) Memory device
JPH033391B2 (US06623731-20030923-C00012.png)
EP0280097A2 (en) Charge transfer device with booster circuit
US4165537A (en) Analog charge transfer apparatus
Engeler et al. A memory system based on surface-charge transport
US4374334A (en) Signal comparator apparatus
EP0001146B1 (en) Charge coupled device
US5146480A (en) Sampling an analog signal voltage using fill and spill input in charge transfer device
Kulkarni-Kohli et al. An integrable MOS neuristor line
US4350902A (en) Input stage for a monolithically integrated charge transfer device which generates two complementary charge packets
Sasaki et al. Charge pumping SOS-MOS transistor memory
Alj et al. Total Ionizing Dose Effects on a CDTI based CCD-on-CMOS through Buildup of Interface Traps and Oxide Charges
US5132656A (en) Floating-gate charge-balance ccd
EP0447917B1 (en) Charge transfer device
US5612554A (en) Charge detection device and driver thereof
Anderson et al. The surface generation hump in irradiated power MOSFETs