PL112654B1 - Method of removal of isolated areas of materials from the substrate,especially during manufacture of photolitographic masks - Google Patents
Method of removal of isolated areas of materials from the substrate,especially during manufacture of photolitographic masks Download PDFInfo
- Publication number
- PL112654B1 PL112654B1 PL1977197962A PL19796277A PL112654B1 PL 112654 B1 PL112654 B1 PL 112654B1 PL 1977197962 A PL1977197962 A PL 1977197962A PL 19796277 A PL19796277 A PL 19796277A PL 112654 B1 PL112654 B1 PL 112654B1
- Authority
- PL
- Poland
- Prior art keywords
- areas
- acid
- contact
- area
- substrate
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000002253 acid Substances 0.000 claims description 48
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 239000011651 chromium Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 27
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 24
- 229910052804 chromium Inorganic materials 0.000 claims description 24
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 15
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003153 chemical reaction reagent Substances 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 235000011007 phosphoric acid Nutrition 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 241000209504 Poaceae Species 0.000 claims 1
- 230000007547 defect Effects 0.000 description 47
- 239000011521 glass Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68496576A | 1976-05-10 | 1976-05-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL197962A1 PL197962A1 (pl) | 1978-01-02 |
| PL112654B1 true PL112654B1 (en) | 1980-10-31 |
Family
ID=24750240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL1977197962A PL112654B1 (en) | 1976-05-10 | 1977-05-07 | Method of removal of isolated areas of materials from the substrate,especially during manufacture of photolitographic masks |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4105468A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5310975A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2719902A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1530978A (cg-RX-API-DMAC7.html) |
| PL (1) | PL112654B1 (cg-RX-API-DMAC7.html) |
| SE (1) | SE7705053L (cg-RX-API-DMAC7.html) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4350564A (en) * | 1980-10-27 | 1982-09-21 | General Electric Company | Method of etching metallic materials including a major percentage of chromium |
| JPS57104141A (en) * | 1980-12-22 | 1982-06-29 | Dainippon Printing Co Ltd | Photomask and photomask substrate |
| DE3249518T1 (de) * | 1982-08-23 | 1984-09-06 | Gravure Research Institute, Inc. (n.d.Ges.d. Staates Illinois), Port Washington, N.Y. | Verfahren und Vorrichtung zur Herstellung von Tiefdruckzellen in einem Tiefdruckzylinder |
| GB2132789A (en) * | 1982-11-24 | 1984-07-11 | Western Electric Co | Method of pattern generation |
| US4569695A (en) * | 1983-04-21 | 1986-02-11 | Nec Corporation | Method of cleaning a photo-mask |
| US4778532A (en) * | 1985-06-24 | 1988-10-18 | Cfm Technologies Limited Partnership | Process and apparatus for treating wafers with process fluids |
| US4984597B1 (en) * | 1984-05-21 | 1999-10-26 | Cfmt Inc | Apparatus for rinsing and drying surfaces |
| US4911761A (en) * | 1984-05-21 | 1990-03-27 | Cfm Technologies Research Associates | Process and apparatus for drying surfaces |
| US4713518A (en) * | 1984-06-08 | 1987-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device manufacturing methods |
| US5090432A (en) * | 1990-10-16 | 1992-02-25 | Verteq, Inc. | Single wafer megasonic semiconductor wafer processing system |
| DE69233293T2 (de) * | 1991-10-04 | 2004-11-18 | CFMT, Inc., Wilmington | Superreinigung von komplizierten Mikroteilchen |
| US6039059A (en) | 1996-09-30 | 2000-03-21 | Verteq, Inc. | Wafer cleaning system |
| US6165649A (en) * | 1997-01-21 | 2000-12-26 | International Business Machines Corporation | Methods for repair of photomasks |
| US6843929B1 (en) * | 2000-02-28 | 2005-01-18 | International Business Machines Corporation | Accelerated etching of chromium |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3539408A (en) * | 1967-08-11 | 1970-11-10 | Western Electric Co | Methods of etching chromium patterns and photolithographic masks so produced |
| US3673018A (en) * | 1969-05-08 | 1972-06-27 | Rca Corp | Method of fabrication of photomasks |
| US3947801A (en) * | 1975-01-23 | 1976-03-30 | Rca Corporation | Laser-trimmed resistor |
-
1977
- 1977-04-28 GB GB17777/77A patent/GB1530978A/en not_active Expired
- 1977-05-02 SE SE7705053A patent/SE7705053L/xx unknown
- 1977-05-04 DE DE19772719902 patent/DE2719902A1/de not_active Withdrawn
- 1977-05-07 PL PL1977197962A patent/PL112654B1/pl unknown
- 1977-05-09 JP JP5302277A patent/JPS5310975A/ja active Granted
- 1977-06-09 US US05/805,153 patent/US4105468A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5310975A (en) | 1978-01-31 |
| SE7705053L (sv) | 1977-11-11 |
| GB1530978A (en) | 1978-11-01 |
| PL197962A1 (pl) | 1978-01-02 |
| JPS5337707B2 (cg-RX-API-DMAC7.html) | 1978-10-11 |
| US4105468A (en) | 1978-08-08 |
| DE2719902A1 (de) | 1977-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RECP | Rectifications of patent specification |