PH12016000032B1 - Palladium (pd)-coated copper wire for ball bonding - Google Patents
Palladium (pd)-coated copper wire for ball bonding Download PDFInfo
- Publication number
- PH12016000032B1 PH12016000032B1 PH12016000032A PH12016000032A PH12016000032B1 PH 12016000032 B1 PH12016000032 B1 PH 12016000032B1 PH 12016000032 A PH12016000032 A PH 12016000032A PH 12016000032 A PH12016000032 A PH 12016000032A PH 12016000032 B1 PH12016000032 B1 PH 12016000032B1
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- Philippines
- Prior art keywords
- palladium
- wire
- copper
- layer
- coating
- Prior art date
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 474
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 160
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 153
- 239000010949 copper Substances 0.000 claims abstract description 156
- 238000000576 coating method Methods 0.000 claims abstract description 81
- 229910052802 copper Inorganic materials 0.000 claims abstract description 81
- 239000011248 coating agent Substances 0.000 claims abstract description 77
- 239000007787 solid Substances 0.000 claims abstract description 46
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 18
- 239000010931 gold Substances 0.000 claims description 62
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 31
- 229910052737 gold Inorganic materials 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 90
- 238000012360 testing method Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 14
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 13
- 239000005751 Copper oxide Substances 0.000 description 13
- 229910000431 copper oxide Inorganic materials 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 230000035515 penetration Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 238000005496 tempering Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000001788 irregular Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000000306 component Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010265 fast atom bombardment Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
- H01L2224/78601—Storing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015033170A JP5807992B1 (ja) | 2015-02-23 | 2015-02-23 | ボールボンディング用パラジウム(Pd)被覆銅ワイヤ |
Publications (2)
Publication Number | Publication Date |
---|---|
PH12016000032B1 true PH12016000032B1 (en) | 2017-07-31 |
PH12016000032A1 PH12016000032A1 (en) | 2017-07-31 |
Family
ID=54545812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PH12016000032A PH12016000032A1 (en) | 2015-02-23 | 2016-01-21 | Palladium (pd)-coated copper wire for ball bonding |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5807992B1 (ja) |
CN (1) | CN105914195B (ja) |
PH (1) | PH12016000032A1 (ja) |
SG (1) | SG10201510489VA (ja) |
TW (2) | TWI553130B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107004610B (zh) * | 2015-07-23 | 2020-07-17 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
TWI721518B (zh) * | 2015-12-15 | 2021-03-11 | 日商日鐵化學材料股份有限公司 | 半導體裝置用接合線 |
SG10201600329SA (en) * | 2016-01-15 | 2017-08-30 | Heraeus Materials Singapore Pte Ltd | Coated wire |
JP6507329B1 (ja) | 2019-02-08 | 2019-04-24 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040245320A1 (en) * | 2001-10-23 | 2004-12-09 | Mesato Fukagaya | Bonding wire |
JP4349641B1 (ja) * | 2009-03-23 | 2009-10-21 | 田中電子工業株式会社 | ボールボンディング用被覆銅ワイヤ |
EP2447380B1 (en) * | 2009-06-24 | 2015-02-25 | Nippon Steel & Sumikin Materials Co., Ltd. | Copper alloy bonding wire for semiconductor |
MY164643A (en) * | 2009-07-30 | 2018-01-30 | Nippon Steel & Sumikin Mat Co | Bonding wire for semiconductor |
CN101707194B (zh) * | 2009-11-11 | 2011-11-23 | 宁波康强电子股份有限公司 | 一种镀钯键合铜丝的制造方法 |
WO2013111642A1 (ja) * | 2012-01-25 | 2013-08-01 | 日鉄住金マイクロメタル株式会社 | ボンディングワイヤ及びその製造方法 |
-
2015
- 2015-02-23 JP JP2015033170A patent/JP5807992B1/ja active Active
- 2015-09-18 TW TW104130903A patent/TWI553130B/zh active
- 2015-09-18 TW TW105103242A patent/TW201631215A/zh unknown
- 2015-12-21 SG SG10201510489VA patent/SG10201510489VA/en unknown
-
2016
- 2016-01-14 CN CN201610024309.3A patent/CN105914195B/zh active Active
- 2016-01-21 PH PH12016000032A patent/PH12016000032A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
TWI553130B (zh) | 2016-10-11 |
TW201631164A (zh) | 2016-09-01 |
SG10201510489VA (en) | 2016-09-29 |
JP2016157745A (ja) | 2016-09-01 |
JP5807992B1 (ja) | 2015-11-10 |
TW201631215A (zh) | 2016-09-01 |
CN105914195A (zh) | 2016-08-31 |
CN105914195B (zh) | 2018-09-28 |
PH12016000032A1 (en) | 2017-07-31 |
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