NO970220L - Transduktor med tynnfilmsjikt av metall, for akustiske overflatebölger - Google Patents

Transduktor med tynnfilmsjikt av metall, for akustiske overflatebölger

Info

Publication number
NO970220L
NO970220L NO970220A NO970220A NO970220L NO 970220 L NO970220 L NO 970220L NO 970220 A NO970220 A NO 970220A NO 970220 A NO970220 A NO 970220A NO 970220 L NO970220 L NO 970220L
Authority
NO
Norway
Prior art keywords
transducer
thin film
film layer
metal thin
surface waves
Prior art date
Application number
NO970220A
Other languages
English (en)
Other versions
NO970220D0 (no
Inventor
Hidefumi Nakanishi
Atsushi Sakurai
Masato Kobayashi
Yukio Yoshino
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8006963A external-priority patent/JPH09194293A/ja
Priority claimed from JP8006964A external-priority patent/JPH09199968A/ja
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of NO970220D0 publication Critical patent/NO970220D0/no
Publication of NO970220L publication Critical patent/NO970220L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
NO970220A 1996-01-19 1997-01-17 Transduktor med tynnfilmsjikt av metall, for akustiske overflatebölger NO970220L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8006963A JPH09194293A (ja) 1996-01-19 1996-01-19 金属薄膜及びその形成方法
JP8006964A JPH09199968A (ja) 1996-01-19 1996-01-19 弾性表面波素子用薄膜電極及びその形成方法

Publications (2)

Publication Number Publication Date
NO970220D0 NO970220D0 (no) 1997-01-17
NO970220L true NO970220L (no) 1997-07-21

Family

ID=26341181

Family Applications (1)

Application Number Title Priority Date Filing Date
NO970220A NO970220L (no) 1996-01-19 1997-01-17 Transduktor med tynnfilmsjikt av metall, for akustiske overflatebölger

Country Status (7)

Country Link
US (2) US6033471A (no)
EP (1) EP0785299A1 (no)
KR (1) KR100249935B1 (no)
CN (1) CN1317875A (no)
CA (1) CA2195486C (no)
NO (1) NO970220L (no)
TW (1) TW330341B (no)

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WO2000015884A1 (fr) * 1998-09-11 2000-03-23 Japan Science And Technology Corporation Dispositif combinatoire d'épitaxie de couche moléculaire
AU2001250958A1 (en) * 2000-03-24 2001-10-08 Cymbet Corporation Continuous processing of thin-film batteries and like devices
US6821338B2 (en) * 2000-12-15 2004-11-23 The Regents Of The University Of California Particle beam biaxial orientation of a substrate for epitaxial crystal growth
WO2002097835A1 (fr) * 2001-05-31 2002-12-05 Nippon Chemi-Con Corporation Condensateur electrolytique solide
US7054140B2 (en) * 2001-05-31 2006-05-30 Nippon Chemi-Con Corp. Electrolytic capacitor and electrode foil used for electrolytic capacitor
US6809066B2 (en) * 2001-07-30 2004-10-26 The Regents Of The University Of California Ion texturing methods and articles
JP3735550B2 (ja) 2001-09-21 2006-01-18 Ｔｄｋ株式会社 弾性表面波装置およびその製造方法
US6660136B2 (en) * 2002-03-27 2003-12-09 Micron Technology, Inc. Method of forming a non-volatile resistance variable device and method of forming a metal layer comprising silver and tungsten
US6548937B1 (en) * 2002-05-01 2003-04-15 Koninklijke Philips Electronics N.V. Array of membrane ultrasound transducers
US6784600B2 (en) * 2002-05-01 2004-08-31 Koninklijke Philips Electronics N.V. Ultrasonic membrane transducer for an ultrasonic diagnostic probe
US7268472B2 (en) * 2002-11-11 2007-09-11 Seiko Epson Corporation Piezoelectric device, liquid jetting head, ferroelectric device, electronic device and methods for manufacturing these devices
US20040131760A1 (en) * 2003-01-02 2004-07-08 Stuart Shakespeare Apparatus and method for depositing material onto multiple independently moving substrates in a chamber
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7603144B2 (en) * 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
FR2856677B1 (fr) * 2003-06-27 2006-12-01 Saint Gobain Substrat revetu d'une couche dielectrique et procede pour sa fabrication
US7250386B2 (en) * 2003-07-18 2007-07-31 Energy Conversion Devices, Inc. Quantum limit catalysts and hydrogen storage materials
JP3767589B2 (ja) * 2003-09-04 2006-04-19 セイコーエプソン株式会社 無機配向膜の形成方法、無機配向膜、電子デバイス用基板、液晶パネルおよび電子機器
US7494742B2 (en) * 2004-01-06 2009-02-24 Cymbet Corporation Layered barrier structure having one or more definable layers and method
US7229533B2 (en) * 2004-06-25 2007-06-12 Guardian Industries Corp. Method of making coated article having low-E coating with ion beam treated and/or formed IR reflecting layer
US7563347B2 (en) * 2004-06-25 2009-07-21 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Method of forming coated article using sputtering target(s) and ion source(s) and corresponding apparatus
US7311975B2 (en) * 2004-06-25 2007-12-25 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Coated article having low-E coating with ion beam treated IR reflecting layer and corresponding method
US7776478B2 (en) * 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
US20070012244A1 (en) * 2005-07-15 2007-01-18 Cymbet Corporation Apparatus and method for making thin-film batteries with soft and hard electrolyte layers
WO2007011900A1 (en) * 2005-07-15 2007-01-25 Cymbet Corporation Thin-film batteries with soft and hard electrolyte layers and method
DE102006053930B4 (de) * 2006-11-15 2008-10-02 Qimonda Ag Herstellungsverfahren für eine Transistor-Gatestruktur
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US10658705B2 (en) 2018-03-07 2020-05-19 Space Charge, LLC Thin-film solid-state energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
KR101511001B1 (ko) * 2012-11-14 2015-04-10 엔지케이 인슐레이터 엘티디 복합 기판
US10472274B2 (en) 2017-07-17 2019-11-12 Guardian Europe S.A.R.L. Coated article having ceramic paint modified surface(s), and/or associated methods
JP2020092321A (ja) 2018-12-05 2020-06-11 太陽誘電株式会社 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ
KR20220156019A (ko) * 2020-03-18 2022-11-24 비코 인스트루먼츠 인코포레이티드 저항률이 낮은 금속의 이온빔 증착
CN112564662B (zh) * 2020-12-11 2023-01-20 济南晶正电子科技有限公司 复合衬底及其制备方法、电子元器件

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US3736045A (en) * 1971-12-27 1973-05-29 Ibm Fast optical guided wave modulator and digital deflector
US4325776A (en) * 1977-06-20 1982-04-20 Siemens Aktiengesellschaft Method for preparing coarse-crystal or single-crystal metal films
JPS6115319A (ja) * 1984-07-02 1986-01-23 Sharp Corp 半導体装置の製造方法
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US4684841A (en) * 1985-04-01 1987-08-04 Northern Telecom Limited Saw devices including resistive films
JPS63137158A (ja) * 1986-11-27 1988-06-09 Nissin Electric Co Ltd アルミ薄膜の作製方法
JPH0314305A (ja) * 1989-06-13 1991-01-23 Murata Mfg Co Ltd 弾性表面波装置の製造方法
EP0534354A1 (en) * 1991-09-25 1993-03-31 Sumitomo Electric Industries, Limited Surface acoustic wave device and manufacturing method thereof
JPH05152884A (ja) * 1991-11-30 1993-06-18 Murata Mfg Co Ltd 表面弾性波素子用基板の製造方法
US5262361A (en) * 1992-01-07 1993-11-16 Texas Instruments Incorporated Via filling by single crystal aluminum
JPH06268083A (ja) * 1993-03-11 1994-09-22 Sony Corp 半導体装置の配線
EP0616426B1 (en) * 1993-03-15 1998-09-16 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device having a lamination structure
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US5747360A (en) * 1993-09-17 1998-05-05 Applied Materials, Inc. Method of metalizing a semiconductor wafer
JP3208977B2 (ja) * 1993-12-02 2001-09-17 株式会社村田製作所 弾性表面波素子の電極形成方法
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate
JP3416470B2 (ja) * 1996-07-18 2003-06-16 三洋電機株式会社 弾性表面波素子

Also Published As

Publication number Publication date
KR100249935B1 (ko) 2000-03-15
NO970220D0 (no) 1997-01-17
US6229250B1 (en) 2001-05-08
CN1317875A (zh) 2001-10-17
TW330341B (en) 1998-04-21
CA2195486A1 (en) 1997-07-19
KR970060380A (ko) 1997-08-12
CA2195486C (en) 2000-10-31
US6033471A (en) 2000-03-07
EP0785299A1 (en) 1997-07-23

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