NO932295L - Magnetoresistiv transduser - Google Patents

Magnetoresistiv transduser

Info

Publication number
NO932295L
NO932295L NO932295A NO932295A NO932295L NO 932295 L NO932295 L NO 932295L NO 932295 A NO932295 A NO 932295A NO 932295 A NO932295 A NO 932295A NO 932295 L NO932295 L NO 932295L
Authority
NO
Norway
Prior art keywords
magnetoresistive transducer
magnetoresistive
transducer
Prior art date
Application number
NO932295A
Other languages
English (en)
Other versions
NO932295D0 (no
Inventor
Thierry Valet
Stephane Tyc
Original Assignee
Thomson Csf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Csf filed Critical Thomson Csf
Publication of NO932295D0 publication Critical patent/NO932295D0/no
Publication of NO932295L publication Critical patent/NO932295L/no

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Adjustable Resistors (AREA)
  • Thin Magnetic Films (AREA)
NO932295A 1992-06-23 1993-06-22 Magnetoresistiv transduser NO932295L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9207626A FR2692711B1 (fr) 1992-06-23 1992-06-23 Transducteur magnetoresistif.

Publications (2)

Publication Number Publication Date
NO932295D0 NO932295D0 (no) 1993-06-22
NO932295L true NO932295L (no) 1993-12-27

Family

ID=9431051

Family Applications (1)

Application Number Title Priority Date Filing Date
NO932295A NO932295L (no) 1992-06-23 1993-06-22 Magnetoresistiv transduser

Country Status (6)

Country Link
US (1) US5463516A (no)
EP (1) EP0577469B1 (no)
JP (1) JP3383007B2 (no)
DE (1) DE69327367T2 (no)
FR (1) FR2692711B1 (no)
NO (1) NO932295L (no)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW265440B (no) * 1993-04-30 1995-12-11 Ibm
US5818323A (en) * 1994-09-09 1998-10-06 Sanyo Electric Co., Ltd. Magnetoresistive device
US5773156A (en) * 1995-01-26 1998-06-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5767673A (en) * 1995-09-14 1998-06-16 Lucent Technologies Inc. Article comprising a manganite magnetoresistive element and magnetically soft material
JP3293437B2 (ja) * 1995-12-19 2002-06-17 松下電器産業株式会社 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子
US6064552A (en) * 1997-03-18 2000-05-16 Kabushiki Kaisha Toshiba Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode
DE69820524T2 (de) * 1997-05-09 2004-09-23 Kabushiki Kaisha Toshiba, Kawasaki Magnetisches Element und Magnetkopf oder Speicherelement die dieses Element verwenden
JPH1125425A (ja) * 1997-06-27 1999-01-29 Sony Corp 磁気ヘッド
JP3024612B2 (ja) * 1997-10-23 2000-03-21 日本電気株式会社 磁気抵抗効果素子およびその製造方法
FR2774207B1 (fr) 1998-01-27 2000-04-28 Thomson Csf Dispositif d'inscription/lecture optique d'un support d'information
EP1048026A1 (en) * 1998-08-25 2000-11-02 Koninklijke Philips Electronics N.V. Thin film shielded magnetic read head device
JP3477638B2 (ja) 1999-07-09 2003-12-10 科学技術振興事業団 強磁性２重量子井戸トンネル磁気抵抗デバイス
JP3604617B2 (ja) * 2000-06-12 2004-12-22 富士通株式会社 磁気検出素子
FR2830971B1 (fr) * 2001-10-12 2004-03-12 Commissariat Energie Atomique Dispositif magnetoresistif a vanne de spin a performances ameliorees
ATE385048T1 (de) * 2003-08-05 2008-02-15 Fiat Ricerche Verfahren zur herstellung von magnetfeld- detektionsbauelementen und entsprechende bauelemente
FR2891917B1 (fr) * 2005-10-07 2008-01-11 Billanco Capteurs de champ magnetique et de courant, procede de commande et noyau magnetique pour ces capteurs
EP1814172A1 (en) * 2006-01-27 2007-08-01 IEE International Electronics & Engineering S.A.R.L. Magnetic field sensing element
JP4878190B2 (ja) * 2006-03-23 2012-02-15 株式会社豊田中央研究所 磁気センサ
EP2180328A1 (en) * 2008-10-22 2010-04-28 Biomimetics Technologies Inc. Microchip for the detection of poor sources of electrical and magnetic fields
CN102830370B (zh) * 2012-08-18 2015-04-29 中北大学 基于Fe3O4纳米颗粒的磁场检测装置及其制造方法
CN103424719B (zh) * 2013-07-10 2015-09-09 中北大学 一种基于纳米磁颗粒的磁矢量敏感元件及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840898A (en) * 1972-12-29 1974-10-08 Ibm Self-biased magnetoresistive sensor
JPS61234083A (ja) * 1985-04-10 1986-10-18 Hitachi Ltd 磁気抵抗効果膜
US4663685A (en) * 1985-08-15 1987-05-05 International Business Machines Magnetoresistive read transducer having patterned longitudinal bias
EP0301902B1 (en) * 1987-07-29 1993-09-29 Sharp Kabushiki Kaisha Method and device for sensing a magnetic field with use of a magneto-resistive property of a superconductive material
JPH0240972A (ja) * 1988-07-29 1990-02-09 Nec Corp 磁気抵抗効果薄膜
US5216560A (en) * 1989-11-22 1993-06-01 Hewlett-Packard Company Stabilization of magnetoresistive sensors using the longitudinal field produced by the current in the contact leads
US5043693A (en) * 1990-08-13 1991-08-27 The United States Of America As Represented By The Secretary Of The Navy Heterogeneous magnetoresistive layer

Also Published As

Publication number Publication date
NO932295D0 (no) 1993-06-22
EP0577469A1 (fr) 1994-01-05
FR2692711B1 (fr) 1996-02-09
DE69327367T2 (de) 2000-06-21
JP3383007B2 (ja) 2003-03-04
US5463516A (en) 1995-10-31
EP0577469B1 (fr) 1999-12-22
FR2692711A1 (fr) 1993-12-24
JPH0697534A (ja) 1994-04-08
DE69327367D1 (de) 2000-01-27

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