ATE385048T1 - Verfahren zur herstellung von magnetfeld- detektionsbauelementen und entsprechende bauelemente - Google Patents

Verfahren zur herstellung von magnetfeld- detektionsbauelementen und entsprechende bauelemente

Info

Publication number
ATE385048T1
ATE385048T1 AT04744188T AT04744188T ATE385048T1 AT E385048 T1 ATE385048 T1 AT E385048T1 AT 04744188 T AT04744188 T AT 04744188T AT 04744188 T AT04744188 T AT 04744188T AT E385048 T1 ATE385048 T1 AT E385048T1
Authority
AT
Austria
Prior art keywords
metallic
regions
manufacturing
magnetic field
field detection
Prior art date
Application number
AT04744188T
Other languages
English (en)
Inventor
Daniele Pullini
Brunetto Martorana
Piero Perlo
Original Assignee
Fiat Ricerche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from ITTO20030605 external-priority patent/ITTO20030605A1/it
Priority claimed from ITTO20030604 external-priority patent/ITTO20030604A1/it
Priority claimed from ITTO20030727 external-priority patent/ITTO20030727A1/it
Application filed by Fiat Ricerche filed Critical Fiat Ricerche
Application granted granted Critical
Publication of ATE385048T1 publication Critical patent/ATE385048T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H01F41/306—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling conductive spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/301—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying ultrathin or granular layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
AT04744188T 2003-08-05 2004-07-30 Verfahren zur herstellung von magnetfeld- detektionsbauelementen und entsprechende bauelemente ATE385048T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITTO20030605 ITTO20030605A1 (it) 2003-08-05 2003-08-05 Procedimento di fabbricazione di dispositivi di rilevazione
ITTO20030604 ITTO20030604A1 (it) 2003-08-05 2003-08-05 Procedimento di fabbricazione di dispositivi di rilevazione
ITTO20030727 ITTO20030727A1 (it) 2003-09-23 2003-09-23 Dispositivo magnetico di tipo spin valve e relativo procedimento di fabbricazione.

Publications (1)

Publication Number Publication Date
ATE385048T1 true ATE385048T1 (de) 2008-02-15

Family

ID=34119484

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04744188T ATE385048T1 (de) 2003-08-05 2004-07-30 Verfahren zur herstellung von magnetfeld- detektionsbauelementen und entsprechende bauelemente

Country Status (5)

Country Link
US (2) US7829962B2 (de)
EP (1) EP1654772B1 (de)
AT (1) ATE385048T1 (de)
DE (1) DE602004011523T2 (de)
WO (1) WO2005013385A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2249974B1 (es) * 2004-03-01 2007-06-01 Consejo Sup. Investig. Cientificas Dispositivo spintronico magnetoresistivo, su procedimiento de fabricacion y sus aplicaciones.
DE102006016334B4 (de) * 2006-04-06 2018-11-15 Boehringer Ingelheim Vetmedica Gmbh Verfahren und Vorrichtung zur Detektion magnetisierbarer Partikel
DE102006028921A1 (de) * 2006-06-23 2007-12-27 Robert Bosch Gmbh Verfahren zur Herstellung eines Siliziumsubstrats mit veränderten Oberflächeneigenschaften sowie ein derartiges Siliziumsubstrat
US10718636B1 (en) * 2012-04-11 2020-07-21 Louisiana Tech Research Corporation Magneto-resistive sensors
KR101409387B1 (ko) 2013-01-16 2014-06-20 아주대학교산학협력단 경사 형태의 구리 나노 로드 제작방법
KR102235612B1 (ko) 2015-01-29 2021-04-02 삼성전자주식회사 일-함수 금속을 갖는 반도체 소자 및 그 형성 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2692711B1 (fr) * 1992-06-23 1996-02-09 Thomson Csf Transducteur magnetoresistif.
US5773156A (en) * 1995-01-26 1998-06-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element
JPH10341047A (ja) * 1997-06-06 1998-12-22 Sony Corp 磁気トンネル素子
JPH1168192A (ja) * 1997-08-18 1999-03-09 Hitachi Ltd 多重トンネル接合、トンネル磁気抵抗効果素子、磁気センサおよび磁気記録センサヘッド
JP3902883B2 (ja) * 1998-03-27 2007-04-11 キヤノン株式会社 ナノ構造体及びその製造方法
US6560077B2 (en) * 2000-01-10 2003-05-06 The University Of Alabama CPP spin-valve device
US6353317B1 (en) * 2000-01-19 2002-03-05 Imperial College Of Science, Technology And Medicine Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography
US6686068B2 (en) * 2001-02-21 2004-02-03 International Business Machines Corporation Heterogeneous spacers for CPP GMR stacks

Also Published As

Publication number Publication date
WO2005013385A2 (en) 2005-02-10
DE602004011523T2 (de) 2009-01-29
EP1654772B1 (de) 2008-01-23
US20060216836A1 (en) 2006-09-28
US20110101477A1 (en) 2011-05-05
DE602004011523D1 (de) 2008-03-13
EP1654772A2 (de) 2006-05-10
WO2005013385A3 (en) 2005-06-02
US8012771B2 (en) 2011-09-06
US7829962B2 (en) 2010-11-09

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