NO893654L - Materiale for elektroniske komponenter og fremstilling avkomponentene. - Google Patents
Materiale for elektroniske komponenter og fremstilling avkomponentene.Info
- Publication number
- NO893654L NO893654L NO89893654A NO893654A NO893654L NO 893654 L NO893654 L NO 893654L NO 89893654 A NO89893654 A NO 89893654A NO 893654 A NO893654 A NO 893654A NO 893654 L NO893654 L NO 893654L
- Authority
- NO
- Norway
- Prior art keywords
- components
- manufacturing
- pure
- casings
- dissipating
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0094—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with organic materials as the main non-metallic constituent, e.g. resin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
- C22C49/04—Light metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
- C22C49/04—Light metals
- C22C49/06—Aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Developing Agents For Electrophotography (AREA)
- Ceramic Capacitors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8812548 | 1988-09-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
NO893654D0 NO893654D0 (no) | 1989-09-12 |
NO893654L true NO893654L (no) | 1990-03-14 |
Family
ID=9370390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO89893654A NO893654L (no) | 1988-09-13 | 1989-09-12 | Materiale for elektroniske komponenter og fremstilling avkomponentene. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0363286B1 (de) |
AT (1) | ATE97171T1 (de) |
DE (1) | DE68910634T2 (de) |
NO (1) | NO893654L (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2590603B2 (ja) * | 1990-10-09 | 1997-03-12 | 三菱電機株式会社 | 電子部品塔載用基材 |
FR2695409B1 (fr) * | 1992-09-10 | 1994-11-25 | Aerospatiale | Matériau composite associant un alliage de magnésium contenant du zirconium à un renfort carbon, et son procédé de fabrication. |
US5528076A (en) * | 1995-02-01 | 1996-06-18 | Motorola, Inc. | Leadframe having metal impregnated silicon carbide mounting area |
AT408345B (de) | 1999-11-17 | 2001-10-25 | Electrovac | Verfahren zur festlegung eines aus metall-matrix- composite-(mmc-) materiales gebildeten körpers auf einem keramischen körper |
AT413704B (de) * | 2004-06-23 | 2006-05-15 | Arc Leichtmetallkompetenzzentrum Ranshofen Gmbh | Kohlenstofffaserverstärktes leichtmetallteil und verfahren zur herstellung desselben |
DE102017216290B4 (de) * | 2017-09-14 | 2022-09-08 | Freie Universität Berlin | Verbundwerkstoff und Verfahren zu dessen Herstellung, Kühlkörper und elektronisches Bauteil |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3889348A (en) * | 1969-03-27 | 1975-06-17 | Jerome H Lemelson | Fiber reinforced composite material and method of making same |
US4492265A (en) * | 1980-08-04 | 1985-01-08 | Toyota Jidosha Kabushiki Kaisha | Method for production of composite material using preheating of reinforcing material |
EP0048768B1 (de) * | 1980-09-29 | 1986-01-22 | Kabushiki Kaisha Toshiba | Halbleiteranordnung mit einem auf einem metallischen Substrat gelöteten Halbleiterelement |
JPS5966966A (ja) * | 1982-10-09 | 1984-04-16 | Toyota Motor Corp | 耐熱性軽合金部材およびその製造方法 |
JPS59100235A (ja) * | 1982-11-27 | 1984-06-09 | Nippon Carbon Co Ltd | 炭化ケイ素繊維強化アルミニウム複合材の製造法 |
JPS617637A (ja) * | 1984-06-22 | 1986-01-14 | Furukawa Electric Co Ltd:The | 半導体 |
JPS619537A (ja) * | 1984-06-25 | 1986-01-17 | Mitsubishi Alum Co Ltd | 無機短繊維強化金属複合材の製造法 |
JPS60145340A (ja) * | 1984-08-06 | 1985-07-31 | Res Inst Iron Steel Tohoku Univ | シリコンカ−バイド繊維強化アルミニウム複合材料の製造方法 |
GB2163179B (en) * | 1984-08-13 | 1988-07-20 | Ae Plc | The manufacture of aluminium/zirconia composites |
JPS62199740A (ja) * | 1986-02-27 | 1987-09-03 | Kobe Steel Ltd | Al合金複合材料 |
US4793883A (en) * | 1986-07-14 | 1988-12-27 | National Starch And Chemical Corporation | Method of bonding a semiconductor chip to a substrate |
JPS6483634A (en) * | 1987-09-25 | 1989-03-29 | Sumitomo Electric Industries | Aluminum composite material combining low thermal expansion property with high heat dissipation property |
-
1989
- 1989-09-11 AT AT89420334T patent/ATE97171T1/de not_active IP Right Cessation
- 1989-09-11 EP EP89420334A patent/EP0363286B1/de not_active Expired - Lifetime
- 1989-09-11 DE DE89420334T patent/DE68910634T2/de not_active Expired - Fee Related
- 1989-09-12 NO NO89893654A patent/NO893654L/no unknown
Also Published As
Publication number | Publication date |
---|---|
EP0363286B1 (de) | 1993-11-10 |
EP0363286A2 (de) | 1990-04-11 |
DE68910634T2 (de) | 1994-03-17 |
ATE97171T1 (de) | 1993-11-15 |
DE68910634D1 (de) | 1993-12-16 |
EP0363286A3 (en) | 1990-11-28 |
NO893654D0 (no) | 1989-09-12 |
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