NO893654L - Materiale for elektroniske komponenter og fremstilling avkomponentene. - Google Patents

Materiale for elektroniske komponenter og fremstilling avkomponentene.

Info

Publication number
NO893654L
NO893654L NO89893654A NO893654A NO893654L NO 893654 L NO893654 L NO 893654L NO 89893654 A NO89893654 A NO 89893654A NO 893654 A NO893654 A NO 893654A NO 893654 L NO893654 L NO 893654L
Authority
NO
Norway
Prior art keywords
components
manufacturing
pure
casings
dissipating
Prior art date
Application number
NO89893654A
Other languages
English (en)
Other versions
NO893654D0 (no
Inventor
Salim Dermarkar
Xavier Dumant
Michel Lebailly
Original Assignee
Pechiney Recherche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pechiney Recherche filed Critical Pechiney Recherche
Publication of NO893654D0 publication Critical patent/NO893654D0/no
Publication of NO893654L publication Critical patent/NO893654L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0094—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with organic materials as the main non-metallic constituent, e.g. resin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
    • C22C49/04—Light metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
    • C22C49/04—Light metals
    • C22C49/06—Aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Ceramic Capacitors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

Et materiale med. høy termisk konduktlvitet, lav densitet og lav ekspansjonskoeffislent består av et komposltt- materlale tlldannet av en matrlks av et metall valgt blant rent aluminium, rent magnesium og legeringer derav samt forsterknlngselementer l partikkel- og/eller fibrøs form, spesielt valgt med henblikk på deres art og egenskaper. Materialet finner anvendelse spesielt l elektronlkk- Industrlen for å tildanne varmebortførlngselementer, bærere, kobllngsplater og bokser for hybridkretser i kraftmlkroelektronlkken.
NO89893654A 1988-09-13 1989-09-12 Materiale for elektroniske komponenter og fremstilling avkomponentene. NO893654L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8812548 1988-09-13

Publications (2)

Publication Number Publication Date
NO893654D0 NO893654D0 (no) 1989-09-12
NO893654L true NO893654L (no) 1990-03-14

Family

ID=9370390

Family Applications (1)

Application Number Title Priority Date Filing Date
NO89893654A NO893654L (no) 1988-09-13 1989-09-12 Materiale for elektroniske komponenter og fremstilling avkomponentene.

Country Status (4)

Country Link
EP (1) EP0363286B1 (no)
AT (1) ATE97171T1 (no)
DE (1) DE68910634T2 (no)
NO (1) NO893654L (no)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590603B2 (ja) * 1990-10-09 1997-03-12 三菱電機株式会社 電子部品塔載用基材
FR2695409B1 (fr) * 1992-09-10 1994-11-25 Aerospatiale Matériau composite associant un alliage de magnésium contenant du zirconium à un renfort carbon, et son procédé de fabrication.
US5528076A (en) * 1995-02-01 1996-06-18 Motorola, Inc. Leadframe having metal impregnated silicon carbide mounting area
AT408345B (de) 1999-11-17 2001-10-25 Electrovac Verfahren zur festlegung eines aus metall-matrix- composite-(mmc-) materiales gebildeten körpers auf einem keramischen körper
AT413704B (de) * 2004-06-23 2006-05-15 Arc Leichtmetallkompetenzzentrum Ranshofen Gmbh Kohlenstofffaserverstärktes leichtmetallteil und verfahren zur herstellung desselben
DE102017216290B4 (de) * 2017-09-14 2022-09-08 Freie Universität Berlin Verbundwerkstoff und Verfahren zu dessen Herstellung, Kühlkörper und elektronisches Bauteil

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3889348A (en) * 1969-03-27 1975-06-17 Jerome H Lemelson Fiber reinforced composite material and method of making same
US4492265A (en) * 1980-08-04 1985-01-08 Toyota Jidosha Kabushiki Kaisha Method for production of composite material using preheating of reinforcing material
EP0048768B1 (en) * 1980-09-29 1986-01-22 Kabushiki Kaisha Toshiba A semiconductor device with a semiconductor element soldered on a metal substrate
JPS5966966A (ja) * 1982-10-09 1984-04-16 Toyota Motor Corp 耐熱性軽合金部材およびその製造方法
JPS59100235A (ja) * 1982-11-27 1984-06-09 Nippon Carbon Co Ltd 炭化ケイ素繊維強化アルミニウム複合材の製造法
JPS617637A (ja) * 1984-06-22 1986-01-14 Furukawa Electric Co Ltd:The 半導体
JPS619537A (ja) * 1984-06-25 1986-01-17 Mitsubishi Alum Co Ltd 無機短繊維強化金属複合材の製造法
JPS60145340A (ja) * 1984-08-06 1985-07-31 Res Inst Iron Steel Tohoku Univ シリコンカ−バイド繊維強化アルミニウム複合材料の製造方法
GB2163179B (en) * 1984-08-13 1988-07-20 Ae Plc The manufacture of aluminium/zirconia composites
JPS62199740A (ja) * 1986-02-27 1987-09-03 Kobe Steel Ltd Ａｌ合金複合材料
US4793883A (en) * 1986-07-14 1988-12-27 National Starch And Chemical Corporation Method of bonding a semiconductor chip to a substrate
JPS6483634A (en) * 1987-09-25 1989-03-29 Sumitomo Electric Industries Aluminum composite material combining low thermal expansion property with high heat dissipation property

Also Published As

Publication number Publication date
EP0363286B1 (fr) 1993-11-10
EP0363286A2 (fr) 1990-04-11
DE68910634T2 (de) 1994-03-17
ATE97171T1 (de) 1993-11-15
DE68910634D1 (de) 1993-12-16
EP0363286A3 (en) 1990-11-28
NO893654D0 (no) 1989-09-12

Similar Documents

Publication Publication Date Title
Scrantom et al. LTCC technology: where we are and where we're going. II
EP1432029A3 (en) Package for housing a semiconductor chip having a metal-diamond composite in the substrate, and fabrication method thereof
HUP9702316A2 (hu) Csiphordozó eszköz
US20070089291A1 (en) Electronic part mounting substrate and method for producing same
EP0248258A3 (en) Improved heat sink device using composite metal alloy
FR2326039B1 (no)
AU2002340453A1 (en) Device and method for package warp compensation in an integrated heat spreader
WO2002061825A3 (en) Electronic assembly with high capacity thermal interface and methods of manufacture
DE3675457D1 (de) Pulvermetallurgische verfestigung von mehrteiligen vorformen.
DE69033226D1 (de) Wärmeleitendes Mischmaterial
JP2010067842A (ja) 黒鉛一金属複合体とアルミニウム押出材の組合せからなる放熱体。
US20090255660A1 (en) High Thermal Conductivity Heat Sinks With Z-Axis Inserts
NO893654L (no) Materiale for elektroniske komponenter og fremstilling avkomponentene.
IT1164860B (it) Prepreg per produrre un composito di elevato allungamento e resistenza al calore e procedimento per produrre tale composito
US5347426A (en) Electronic device including a passive electronic component
EP0207012A3 (en) Method to ensure the cooling of electronic components fixed on a multilayer for printed circuits and multilayer realized according to said method
JP2002066724A (ja) 複合材及びその製造方法
US4872606A (en) Sealed structure and production method thereof
ATE48103T1 (de) Weichlotzusammensetzung.
JPH08186204A (ja) ヒートシンク及びその製造方法
EP0341246A4 (en) Ceramic-glass-metal composite
Occhionero et al. AlSiC, and AlSiC hybrid composites for flip chips, optoelectronics, power, and high brightness LED thermal management solutions
KR900011683A (ko) 제2물체에 세라믹 복합체를 접합시키는 방법과 그 방법으로 제조된 제품
JP2001230358A5 (no)
JPS6473745A (en) Semiconductor device and manufacture thereof