NO843147L - Kjemisk paadampingsapparat - Google Patents
Kjemisk paadampingsapparatInfo
- Publication number
- NO843147L NO843147L NO843147A NO843147A NO843147L NO 843147 L NO843147 L NO 843147L NO 843147 A NO843147 A NO 843147A NO 843147 A NO843147 A NO 843147A NO 843147 L NO843147 L NO 843147L
- Authority
- NO
- Norway
- Prior art keywords
- gas
- deposition
- chamber
- base
- reaction chamber
- Prior art date
Links
- 239000000126 substance Substances 0.000 title description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- 230000008021 deposition Effects 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010453 quartz Substances 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 4
- 239000002826 coolant Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims 1
- 230000000284 resting effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 17
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract 2
- 238000005728 strengthening Methods 0.000 abstract 1
- 239000012780 transparent material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 46
- 238000009834 vaporization Methods 0.000 description 13
- 230000008016 vaporization Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/80—Material per se process of making same
- Y10S505/815—Process of making per se
- Y10S505/818—Coating
- Y10S505/819—Vapor deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/826—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electroluminescent Light Sources (AREA)
- Magnetic Heads (AREA)
- Electrodes Of Semiconductors (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Yarns And Mechanical Finishing Of Yarns Or Ropes (AREA)
- Control And Other Processes For Unpacking Of Materials (AREA)
- Surgical Instruments (AREA)
- Polarising Elements (AREA)
- Physical Vapour Deposition (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Materials For Medical Uses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/528,193 US4539933A (en) | 1983-08-31 | 1983-08-31 | Chemical vapor deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO843147L true NO843147L (no) | 1985-03-01 |
Family
ID=24104627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO843147A NO843147L (no) | 1983-08-31 | 1984-08-06 | Kjemisk paadampingsapparat |
Country Status (16)
| Country | Link |
|---|---|
| US (1) | US4539933A (xx) |
| EP (1) | EP0137702B1 (xx) |
| JP (4) | JPS6070177A (xx) |
| KR (1) | KR890002743B1 (xx) |
| AT (1) | ATE51253T1 (xx) |
| AU (1) | AU572883B2 (xx) |
| BR (1) | BR8404333A (xx) |
| CA (1) | CA1216419A (xx) |
| DE (1) | DE3481718D1 (xx) |
| DK (1) | DK412984A (xx) |
| ES (1) | ES8600422A1 (xx) |
| IL (1) | IL72796A (xx) |
| NO (1) | NO843147L (xx) |
| PT (1) | PT79138A (xx) |
| YU (1) | YU150884A (xx) |
| ZA (1) | ZA846121B (xx) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3347343A1 (de) * | 1983-12-28 | 1985-07-18 | kvl Kunststoffverarbeitung GmbH, 6780 Pirmasens | Schuh, insbesondere sport- oder freizeitschuh |
| JPS6123760A (ja) * | 1984-07-09 | 1986-02-01 | Canon Inc | 電子写真感光体の製造方法 |
| DE3502592A1 (de) * | 1985-01-26 | 1986-07-31 | Rotring-Werke Riepe Kg, 2000 Hamburg | Roehrchenschreibgeraet |
| US4640221A (en) * | 1985-10-30 | 1987-02-03 | International Business Machines Corporation | Vacuum deposition system with improved mass flow control |
| JPS62134936A (ja) * | 1985-12-05 | 1987-06-18 | アニコン・インコ−ポレ−テツド | 腐食耐性をもつたウエ−フア−・ボ−ト及びその製造法 |
| FR2594529B1 (fr) * | 1986-02-19 | 1990-01-26 | Bertin & Cie | Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium |
| US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
| US4720395A (en) * | 1986-08-25 | 1988-01-19 | Anicon, Inc. | Low temperature silicon nitride CVD process |
| DE8704734U1 (de) * | 1987-03-31 | 1987-05-14 | plasma-electronic GmbH + Co, 7024 Filderstadt | Vakuumkammer zur Behandlung der Oberflächen von insbesondere Substraten od.dgl. mittels ionisierter Gase |
| FR2618799B1 (fr) * | 1987-07-27 | 1989-12-29 | Inst Nat Rech Chimique | Reacteur de depot en phase vapeur |
| US5001327A (en) * | 1987-09-11 | 1991-03-19 | Hitachi, Ltd. | Apparatus and method for performing heat treatment on semiconductor wafers |
| US5169478A (en) * | 1987-10-08 | 1992-12-08 | Friendtech Laboratory, Ltd. | Apparatus for manufacturing semiconductor devices |
| JPH0638113Y2 (ja) * | 1988-02-08 | 1994-10-05 | 国際電気株式会社 | 縦形炉におけるｏリングシール部の冷却構造 |
| KR970008334B1 (en) * | 1988-02-24 | 1997-05-23 | Tokyo Electron Sagami Kk | Method and apparatus for heat treatment method |
| US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
| US5071670A (en) * | 1990-06-11 | 1991-12-10 | Kelly Michael A | Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means |
| US5320680A (en) * | 1991-04-25 | 1994-06-14 | Silicon Valley Group, Inc. | Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow |
| US5497727A (en) * | 1993-09-07 | 1996-03-12 | Lsi Logic Corporation | Cooling element for a semiconductor fabrication chamber |
| US5575856A (en) * | 1994-05-11 | 1996-11-19 | Sony Corporation | Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus |
| US5680502A (en) * | 1995-04-03 | 1997-10-21 | Varian Associates, Inc. | Thin film heat treatment apparatus with conductively heated table and surrounding radiation shield |
| US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
| US6383330B1 (en) | 1999-09-10 | 2002-05-07 | Asm America, Inc. | Quartz wafer processing chamber |
| US6902623B2 (en) | 2001-06-07 | 2005-06-07 | Veeco Instruments Inc. | Reactor having a movable shutter |
| TWI224815B (en) * | 2001-08-01 | 2004-12-01 | Tokyo Electron Ltd | Gas processing apparatus and gas processing method |
| JP4157718B2 (ja) * | 2002-04-22 | 2008-10-01 | キヤノンアネルバ株式会社 | 窒化シリコン膜作製方法及び窒化シリコン膜作製装置 |
| US6946033B2 (en) * | 2002-09-16 | 2005-09-20 | Applied Materials Inc. | Heated gas distribution plate for a processing chamber |
| US20040052969A1 (en) * | 2002-09-16 | 2004-03-18 | Applied Materials, Inc. | Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate |
| KR100532657B1 (ko) * | 2002-11-18 | 2005-12-02 | 주식회사 야스 | 다증발원을 이용한 동시증착에서 균일하게 혼합된 박막의증착을 위한 증발 영역조절장치 |
| KR100481874B1 (ko) * | 2003-02-05 | 2005-04-11 | 삼성전자주식회사 | 집적회로 제조에 사용되는 확산로 및 확산로의 냉각방법 |
| SG155057A1 (en) * | 2003-02-27 | 2009-09-30 | Asahi Glass Co Ltd | Outer tube made of silicon carbide and thermal treatment system for semiconductors |
| US7169233B2 (en) * | 2003-11-21 | 2007-01-30 | Asm America, Inc. | Reactor chamber |
| US20080050889A1 (en) * | 2006-08-24 | 2008-02-28 | Applied Materials, Inc. | Hotwall reactor and method for reducing particle formation in GaN MOCVD |
| US7789965B2 (en) | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
| US20080289650A1 (en) * | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
| JP5188326B2 (ja) * | 2008-08-28 | 2013-04-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、及び基板処理装置 |
| TW201118240A (en) * | 2009-11-20 | 2011-06-01 | Jun-Guang Luo | Heat storage device and hot-air engine assembly with heat storage device |
| JP5529634B2 (ja) * | 2010-06-10 | 2014-06-25 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板の製造方法 |
| JP2012195565A (ja) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
| JP5541274B2 (ja) * | 2011-12-28 | 2014-07-09 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| JP6158025B2 (ja) * | 2013-10-02 | 2017-07-05 | 株式会社ニューフレアテクノロジー | 成膜装置及び成膜方法 |
| EP3100298B1 (en) | 2014-01-27 | 2020-07-15 | Veeco Instruments Inc. | Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems |
| USD1028913S1 (en) | 2021-06-30 | 2024-05-28 | Asm Ip Holding B.V. | Semiconductor deposition reactor ring |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3233578A (en) * | 1962-04-23 | 1966-02-08 | Capita Emil Robert | Apparatus for vapor plating |
| DE1244733B (de) * | 1963-11-05 | 1967-07-20 | Siemens Ag | Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern |
| NL6700080A (xx) * | 1966-01-03 | 1967-07-04 | ||
| US3456616A (en) * | 1968-05-08 | 1969-07-22 | Texas Instruments Inc | Vapor deposition apparatus including orbital substrate support |
| US3675619A (en) * | 1969-02-25 | 1972-07-11 | Monsanto Co | Apparatus for production of epitaxial films |
| DE1929422B2 (de) * | 1969-06-10 | 1974-08-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial |
| DE2324365C3 (de) * | 1973-05-14 | 1978-05-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper |
| JPS5821025B2 (ja) * | 1976-10-20 | 1983-04-26 | 松下電器産業株式会社 | 気相化学蒸着装置 |
| SU843028A1 (ru) * | 1979-06-18 | 1981-06-30 | Предприятие П/Я В-8495 | Устройство дл осаждени слоев изгАзОВОй фАзы |
| US4348580A (en) * | 1980-05-07 | 1982-09-07 | Tylan Corporation | Energy efficient furnace with movable end wall |
| US4309240A (en) * | 1980-05-16 | 1982-01-05 | Advanced Crystal Sciences, Inc. | Process for chemical vapor deposition of films on silicon wafers |
| GB2089840B (en) * | 1980-12-20 | 1983-12-14 | Cambridge Instr Ltd | Chemical vapour deposition apparatus incorporating radiant heat source for substrate |
| US4545327A (en) * | 1982-08-27 | 1985-10-08 | Anicon, Inc. | Chemical vapor deposition apparatus |
-
1983
- 1983-08-31 US US06/528,193 patent/US4539933A/en not_active Expired - Lifetime
-
1984
- 1984-08-06 NO NO843147A patent/NO843147L/no unknown
- 1984-08-07 ZA ZA846121A patent/ZA846121B/xx unknown
- 1984-08-27 PT PT79138A patent/PT79138A/pt unknown
- 1984-08-29 IL IL72796A patent/IL72796A/xx not_active IP Right Cessation
- 1984-08-29 JP JP59178573A patent/JPS6070177A/ja active Pending
- 1984-08-29 DK DK412984A patent/DK412984A/da not_active Application Discontinuation
- 1984-08-30 AT AT84305932T patent/ATE51253T1/de not_active IP Right Cessation
- 1984-08-30 AU AU32564/84A patent/AU572883B2/en not_active Ceased
- 1984-08-30 BR BR8404333A patent/BR8404333A/pt unknown
- 1984-08-30 KR KR1019840005338A patent/KR890002743B1/ko not_active IP Right Cessation
- 1984-08-30 ES ES535550A patent/ES8600422A1/es not_active Expired
- 1984-08-30 DE DE8484305932T patent/DE3481718D1/de not_active Expired - Lifetime
- 1984-08-30 EP EP84305932A patent/EP0137702B1/en not_active Expired - Lifetime
- 1984-08-30 CA CA000462110A patent/CA1216419A/en not_active Expired
- 1984-08-31 YU YU01508/84A patent/YU150884A/xx unknown
-
1986
- 1986-01-27 JP JP61013965A patent/JPS61179865A/ja active Pending
- 1986-01-27 JP JP61013966A patent/JPS61179866A/ja active Pending
- 1986-01-27 JP JP61013967A patent/JPS61194179A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0137702B1 (en) | 1990-03-21 |
| IL72796A0 (en) | 1984-11-30 |
| YU150884A (en) | 1987-12-31 |
| KR850001929A (ko) | 1985-04-10 |
| KR890002743B1 (ko) | 1989-07-26 |
| US4539933A (en) | 1985-09-10 |
| EP0137702A2 (en) | 1985-04-17 |
| JPS61194179A (ja) | 1986-08-28 |
| JPS61179865A (ja) | 1986-08-12 |
| ES535550A0 (es) | 1985-10-16 |
| AU3256484A (en) | 1985-03-07 |
| JPS61179866A (ja) | 1986-08-12 |
| IL72796A (en) | 1988-04-29 |
| JPS6070177A (ja) | 1985-04-20 |
| EP0137702A3 (en) | 1987-07-15 |
| DK412984A (da) | 1985-03-01 |
| PT79138A (en) | 1984-09-01 |
| DK412984D0 (da) | 1984-08-29 |
| DE3481718D1 (de) | 1990-04-26 |
| AU572883B2 (en) | 1988-05-19 |
| ES8600422A1 (es) | 1985-10-16 |
| ATE51253T1 (de) | 1990-04-15 |
| ZA846121B (en) | 1985-03-27 |
| JPH0129870B2 (xx) | 1989-06-14 |
| CA1216419A (en) | 1987-01-13 |
| BR8404333A (pt) | 1985-07-30 |
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