NO842822L - Fremgangsmaate til aa danne ohmske kontakter - Google Patents
Fremgangsmaate til aa danne ohmske kontakterInfo
- Publication number
- NO842822L NO842822L NO842822A NO842822A NO842822L NO 842822 L NO842822 L NO 842822L NO 842822 A NO842822 A NO 842822A NO 842822 A NO842822 A NO 842822A NO 842822 L NO842822 L NO 842822L
- Authority
- NO
- Norway
- Prior art keywords
- solution
- film
- acid
- acidic solution
- metal
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 29
- 239000010408 film Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 11
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 9
- 239000003929 acidic solution Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 239000003637 basic solution Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052755 nonmetal Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims description 2
- -1 peroxide compound Chemical class 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 23
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 12
- 229910004613 CdTe Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- OEDMOCYNWLHUDP-UHFFFAOYSA-N bromomethanol Chemical compound OCBr OEDMOCYNWLHUDP-UHFFFAOYSA-N 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Push-Button Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/524,411 US4456630A (en) | 1983-08-18 | 1983-08-18 | Method of forming ohmic contacts |
Publications (1)
Publication Number | Publication Date |
---|---|
NO842822L true NO842822L (no) | 1985-02-19 |
Family
ID=24089102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO842822A NO842822L (no) | 1983-08-18 | 1984-07-11 | Fremgangsmaate til aa danne ohmske kontakter |
Country Status (11)
Country | Link |
---|---|
US (1) | US4456630A (ja) |
EP (1) | EP0139884B1 (ja) |
JP (1) | JPS6070724A (ja) |
AU (1) | AU553558B2 (ja) |
CA (1) | CA1208372A (ja) |
DE (1) | DE3476141D1 (ja) |
ES (1) | ES534777A0 (ja) |
IL (1) | IL72460A (ja) |
IN (1) | IN164151B (ja) |
NO (1) | NO842822L (ja) |
ZA (1) | ZA845431B (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4666569A (en) * | 1984-12-28 | 1987-05-19 | Standard Oil Commercial Development Company | Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor |
US4680611A (en) * | 1984-12-28 | 1987-07-14 | Sohio Commercial Development Co. | Multilayer ohmic contact for p-type semiconductor and method of making same |
US4735662A (en) * | 1987-01-06 | 1988-04-05 | The Standard Oil Company | Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
US4956304A (en) * | 1988-04-07 | 1990-09-11 | Santa Barbara Research Center | Buried junction infrared photodetector process |
US5035769A (en) * | 1989-10-04 | 1991-07-30 | The United States Of America As Represented By The United States Department Of Energy | Nondestructive method for chemically machining crucibles or molds from their enclosed ingots and castings |
GB9123684D0 (en) * | 1991-11-07 | 1992-01-02 | Bp Solar Ltd | Ohmic contacts |
US5229324A (en) * | 1991-12-23 | 1993-07-20 | Texas Instruments Incorporated | Method for forming contacts to p-type HgCdTe semiconductor material using lead and tin |
US5557146A (en) * | 1993-07-14 | 1996-09-17 | University Of South Florida | Ohmic contact using binder paste with semiconductor material dispersed therein |
JP3344287B2 (ja) * | 1996-08-30 | 2002-11-11 | 住友電気工業株式会社 | Ii−vi族化合物半導体結晶の表面清浄化方法 |
US5909632A (en) * | 1997-09-25 | 1999-06-01 | Midwest Research Institute | Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films |
US6281035B1 (en) | 1997-09-25 | 2001-08-28 | Midwest Research Institute | Ion-beam treatment to prepare surfaces of p-CdTe films |
CN1214469C (zh) * | 2000-04-06 | 2005-08-10 | 阿克佐诺贝尔股份有限公司 | 制造光伏箔的方法 |
WO2002091483A2 (en) * | 2001-05-08 | 2002-11-14 | Bp Corporation North America Inc. | Improved photovoltaic device |
US20070184573A1 (en) * | 2006-02-08 | 2007-08-09 | Guardian Industries Corp., | Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device |
US8298380B2 (en) * | 2006-05-23 | 2012-10-30 | Guardian Industries Corp. | Method of making thermally tempered coated article with transparent conductive oxide (TCO) coating in color compression configuration, and product made using same |
AU2009226128A1 (en) | 2008-03-18 | 2009-09-24 | Solexant Corp. | Improved back contact in thin solar cells |
US8410357B2 (en) * | 2008-03-18 | 2013-04-02 | Solexant Corp. | Back contact for thin film solar cells |
US8143512B2 (en) * | 2008-03-26 | 2012-03-27 | Solexant Corp. | Junctions in substrate solar cells |
WO2011044382A1 (en) * | 2009-10-07 | 2011-04-14 | Reel Solar Incorporated | Porous substrates for fabrication of thin film solar cells |
US20110117696A1 (en) * | 2009-11-19 | 2011-05-19 | Air Liquide Electronics U.S. Lp | CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS |
US8524524B2 (en) | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
US8187963B2 (en) | 2010-05-24 | 2012-05-29 | EncoreSolar, Inc. | Method of forming back contact to a cadmium telluride solar cell |
US9397238B2 (en) * | 2011-09-19 | 2016-07-19 | First Solar, Inc. | Method of etching a semiconductor layer of a photovoltaic device |
US9276157B2 (en) | 2012-08-31 | 2016-03-01 | First Solar, Inc. | Methods of treating a semiconductor layer |
US9231134B2 (en) | 2012-08-31 | 2016-01-05 | First Solar, Inc. | Photovoltaic devices |
WO2014144120A1 (en) * | 2013-03-15 | 2014-09-18 | First Solar, Inc. | Method of manufacturing a photovoltaic device |
CN104518045B (zh) | 2013-09-26 | 2018-03-23 | 中国建材国际工程集团有限公司 | 用来调理CdTe薄层太阳能电池的CdTe层的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL192840A (ja) * | 1954-12-01 | |||
US2822299A (en) * | 1955-11-28 | 1958-02-04 | Philips Corp | Method of making a cadmium-telluride semi-conductive device |
US4319069A (en) * | 1980-07-25 | 1982-03-09 | Eastman Kodak Company | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
-
1983
- 1983-08-18 US US06/524,411 patent/US4456630A/en not_active Expired - Lifetime
-
1984
- 1984-06-26 IN IN460/MAS/84A patent/IN164151B/en unknown
- 1984-07-10 CA CA000458561A patent/CA1208372A/en not_active Expired
- 1984-07-10 AU AU30462/84A patent/AU553558B2/en not_active Ceased
- 1984-07-11 NO NO842822A patent/NO842822L/no unknown
- 1984-07-13 ZA ZA845431A patent/ZA845431B/xx unknown
- 1984-07-20 IL IL72460A patent/IL72460A/xx unknown
- 1984-07-24 EP EP84108747A patent/EP0139884B1/en not_active Expired
- 1984-07-24 DE DE8484108747T patent/DE3476141D1/de not_active Expired
- 1984-07-30 JP JP59160199A patent/JPS6070724A/ja active Granted
- 1984-07-31 ES ES534777A patent/ES534777A0/es active Granted
Also Published As
Publication number | Publication date |
---|---|
ZA845431B (en) | 1986-10-29 |
IL72460A (en) | 1987-12-20 |
AU553558B2 (en) | 1986-07-17 |
JPH0478004B2 (ja) | 1992-12-10 |
US4456630A (en) | 1984-06-26 |
DE3476141D1 (en) | 1989-02-16 |
IN164151B (ja) | 1989-01-21 |
CA1208372A (en) | 1986-07-22 |
AU3046284A (en) | 1985-02-21 |
ES8507730A1 (es) | 1985-09-16 |
IL72460A0 (en) | 1984-11-30 |
ES534777A0 (es) | 1985-09-16 |
EP0139884A1 (en) | 1985-05-08 |
EP0139884B1 (en) | 1989-01-11 |
JPS6070724A (ja) | 1985-04-22 |
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