NO322331B1 - Trykktransduser og fremgangsmate for fremstilling av derav - Google Patents
Trykktransduser og fremgangsmate for fremstilling av derav Download PDFInfo
- Publication number
- NO322331B1 NO322331B1 NO19993213A NO993213A NO322331B1 NO 322331 B1 NO322331 B1 NO 322331B1 NO 19993213 A NO19993213 A NO 19993213A NO 993213 A NO993213 A NO 993213A NO 322331 B1 NO322331 B1 NO 322331B1
- Authority
- NO
- Norway
- Prior art keywords
- membrane
- substrate
- layer
- accordance
- sacrificial layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000012528 membrane Substances 0.000 claims description 158
- 239000000758 substrate Substances 0.000 claims description 125
- 238000000034 method Methods 0.000 claims description 45
- 239000007789 gas Substances 0.000 claims description 25
- 238000001312 dry etching Methods 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 6
- 239000011147 inorganic material Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 308
- 239000004020 conductor Substances 0.000 description 31
- 230000008569 process Effects 0.000 description 25
- 238000005530 etching Methods 0.000 description 21
- 239000007788 liquid Substances 0.000 description 21
- 229910018503 SF6 Inorganic materials 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical group FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 18
- 229960000909 sulfur hexafluoride Drugs 0.000 description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000004642 Polyimide Substances 0.000 description 10
- 230000000873 masking effect Effects 0.000 description 10
- 239000012044 organic layer Substances 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10198078A JP2000022172A (ja) | 1998-06-30 | 1998-06-30 | 変換装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO993213D0 NO993213D0 (no) | 1999-06-28 |
| NO993213L NO993213L (no) | 2000-01-04 |
| NO322331B1 true NO322331B1 (no) | 2006-09-18 |
Family
ID=16385160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO19993213A NO322331B1 (no) | 1998-06-30 | 1999-06-28 | Trykktransduser og fremgangsmate for fremstilling av derav |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6441451B1 (da) |
| EP (1) | EP0969694B1 (da) |
| JP (1) | JP2000022172A (da) |
| CN (1) | CN1145219C (da) |
| DE (1) | DE69934841T2 (da) |
| DK (1) | DK0969694T3 (da) |
| NO (1) | NO322331B1 (da) |
Families Citing this family (75)
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| JP2002257616A (ja) * | 2001-03-06 | 2002-09-11 | Seiko Epson Corp | センサおよびセンサの製造方法 |
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| US20040232503A1 (en) * | 2001-06-12 | 2004-11-25 | Shinya Sato | Semiconductor device and method of producing the same |
| JP4296728B2 (ja) * | 2001-07-06 | 2009-07-15 | 株式会社デンソー | 静電容量型圧力センサおよびその製造方法並びに静電容量型圧力センサに用いるセンサ用構造体 |
| JP4296731B2 (ja) | 2001-07-18 | 2009-07-15 | 株式会社デンソー | 静電容量型圧力センサの製造方法 |
| US7298856B2 (en) | 2001-09-05 | 2007-11-20 | Nippon Hoso Kyokai | Chip microphone and method of making same |
| US6677176B2 (en) * | 2002-01-18 | 2004-01-13 | The Hong Kong University Of Science And Technology | Method of manufacturing an integrated electronic microphone having a floating gate electrode |
| US6952042B2 (en) * | 2002-06-17 | 2005-10-04 | Honeywell International, Inc. | Microelectromechanical device with integrated conductive shield |
| WO2004016168A1 (en) * | 2002-08-19 | 2004-02-26 | Czarnek & Orkin Laboratories, Inc. | Capacitive uterine contraction sensor |
| JP2004177343A (ja) * | 2002-11-28 | 2004-06-24 | Fujikura Ltd | 圧力センサ |
| US6983653B2 (en) * | 2002-12-13 | 2006-01-10 | Denso Corporation | Flow sensor having thin film portion and method for manufacturing the same |
| CN100486359C (zh) * | 2003-08-12 | 2009-05-06 | 中国科学院声学研究所 | 一种传声器芯片制备方法 |
| CN1330952C (zh) * | 2003-11-14 | 2007-08-08 | 中国科学院电子学研究所 | 聚合材料气压传感器芯片 |
| JP4529431B2 (ja) * | 2003-12-05 | 2010-08-25 | 株式会社豊田中央研究所 | マイクロ構造体の製造方法 |
| KR100517515B1 (ko) * | 2004-01-20 | 2005-09-28 | 삼성전자주식회사 | 모놀리틱 잉크젯 프린트헤드의 제조방법 |
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| JP4036866B2 (ja) * | 2004-07-30 | 2008-01-23 | 三洋電機株式会社 | 音響センサ |
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| US6923069B1 (en) | 2004-10-18 | 2005-08-02 | Honeywell International Inc. | Top side reference cavity for absolute pressure sensor |
| DE102005004878B4 (de) * | 2005-02-03 | 2015-01-08 | Robert Bosch Gmbh | Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren |
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| JP2006226756A (ja) * | 2005-02-16 | 2006-08-31 | Denso Corp | 圧力センサ |
| US7825484B2 (en) * | 2005-04-25 | 2010-11-02 | Analog Devices, Inc. | Micromachined microphone and multisensor and method for producing same |
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| US7562429B2 (en) * | 2005-06-20 | 2009-07-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Suspended device and method of making |
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| DE102006002106B4 (de) * | 2006-01-17 | 2016-03-03 | Robert Bosch Gmbh | Mikromechanischer Sensor mit perforationsoptimierter Membran sowie ein geeignetes Hestellungsverfahren |
| FR2897937B1 (fr) | 2006-02-24 | 2008-05-23 | Commissariat Energie Atomique | Capteur de pression a jauges resistives |
| FR2900869B1 (fr) * | 2006-05-12 | 2009-03-13 | Salomon Sa | Roue a rayons |
| DE102006022378A1 (de) | 2006-05-12 | 2007-11-22 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements und mikromechanisches Bauelement |
| EP1860417B1 (en) * | 2006-05-23 | 2011-05-25 | Sensirion Holding AG | A pressure sensor having a chamber and a method for fabricating the same |
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| JP2008101918A (ja) * | 2006-10-17 | 2008-05-01 | Alps Electric Co Ltd | 圧力センサのパッケージ |
| JP2008132583A (ja) * | 2006-10-24 | 2008-06-12 | Seiko Epson Corp | Ｍｅｍｓデバイス |
| DE102006055147B4 (de) | 2006-11-03 | 2011-01-27 | Infineon Technologies Ag | Schallwandlerstruktur und Verfahren zur Herstellung einer Schallwandlerstruktur |
| EP1931173B1 (en) * | 2006-12-06 | 2011-07-20 | Electronics and Telecommunications Research Institute | Condenser microphone having flexure hinge diaphragm and method of manufacturing the same |
| DE102008000128B4 (de) * | 2007-01-30 | 2013-01-03 | Denso Corporation | Halbleitersensorvorrichtung und deren Herstellungsverfahren |
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| US8240217B2 (en) * | 2007-10-15 | 2012-08-14 | Kavlico Corporation | Diaphragm isolation forming through subtractive etching |
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| JP5400708B2 (ja) * | 2010-05-27 | 2014-01-29 | オムロン株式会社 | 音響センサ、音響トランスデューサ、該音響トランスデューサを利用したマイクロフォン、および音響トランスデューサの製造方法 |
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| JP5875244B2 (ja) | 2011-04-06 | 2016-03-02 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
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| JP6127625B2 (ja) * | 2013-03-19 | 2017-05-17 | オムロン株式会社 | 静電容量型圧力センサ及び入力装置 |
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| CN105492128B (zh) * | 2013-08-26 | 2018-08-10 | 皇家飞利浦有限公司 | 超声换能器组件和用于制造超声换能器组件的方法 |
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| KR102397715B1 (ko) | 2016-12-09 | 2022-05-13 | 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 | 섬유 마이크로폰 |
| CN107337174B (zh) * | 2017-06-27 | 2019-04-02 | 杭州电子科技大学 | 一种多晶硅振膜结构的制作方法 |
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| CN110366083B (zh) * | 2018-04-11 | 2021-02-12 | 中芯国际集成电路制造(上海)有限公司 | Mems器件及其制备方法 |
| US11225409B2 (en) | 2018-09-17 | 2022-01-18 | Invensense, Inc. | Sensor with integrated heater |
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| JP7497800B2 (ja) | 2020-07-08 | 2024-06-11 | オー・エイチ・ティー株式会社 | 容量センサ及び容量センサの製造方法 |
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-
1998
- 1998-06-30 JP JP10198078A patent/JP2000022172A/ja not_active Withdrawn
-
1999
- 1999-06-28 NO NO19993213A patent/NO322331B1/no not_active IP Right Cessation
- 1999-06-29 US US09/342,065 patent/US6441451B1/en not_active Expired - Lifetime
- 1999-06-30 CN CNB991101588A patent/CN1145219C/zh not_active Expired - Fee Related
- 1999-06-30 DK DK99305144T patent/DK0969694T3/da active
- 1999-06-30 DE DE69934841T patent/DE69934841T2/de not_active Expired - Lifetime
- 1999-06-30 EP EP99305144A patent/EP0969694B1/en not_active Expired - Lifetime
-
2002
- 2002-02-26 US US10/082,318 patent/US6756248B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69934841T2 (de) | 2007-10-11 |
| US6756248B2 (en) | 2004-06-29 |
| CN1145219C (zh) | 2004-04-07 |
| EP0969694A2 (en) | 2000-01-05 |
| NO993213D0 (no) | 1999-06-28 |
| JP2000022172A (ja) | 2000-01-21 |
| EP0969694A3 (en) | 2005-06-01 |
| EP0969694B1 (en) | 2007-01-17 |
| CN1247386A (zh) | 2000-03-15 |
| US20020093038A1 (en) | 2002-07-18 |
| US6441451B1 (en) | 2002-08-27 |
| NO993213L (no) | 2000-01-04 |
| DE69934841D1 (de) | 2007-03-08 |
| DK0969694T3 (da) | 2007-05-14 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM1K | Lapsed by not paying the annual fees |