NO320149B1 - Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning - Google Patents
Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning Download PDFInfo
- Publication number
- NO320149B1 NO320149B1 NO20040644A NO20040644A NO320149B1 NO 320149 B1 NO320149 B1 NO 320149B1 NO 20040644 A NO20040644 A NO 20040644A NO 20040644 A NO20040644 A NO 20040644A NO 320149 B1 NO320149 B1 NO 320149B1
- Authority
- NO
- Norway
- Prior art keywords
- disturbance
- cells
- potential
- pulses
- addressed
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 44
- 230000010287 polarization Effects 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 21
- 238000003491 array Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 16
- 239000010410 layer Substances 0.000 description 11
- 230000036961 partial effect Effects 0.000 description 9
- 230000009467 reduction Effects 0.000 description 8
- 230000001419 dependent effect Effects 0.000 description 7
- 230000001066 destructive effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 230000006399 behavior Effects 0.000 description 4
- 230000000284 resting effect Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000009812 interlayer coupling reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20040644A NO320149B1 (no) | 2004-02-13 | 2004-02-13 | Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning |
AU2005213099A AU2005213099A1 (en) | 2004-02-13 | 2005-02-07 | Non-switching pre-and post-disturb compensational pulses |
PCT/NO2005/000044 WO2005078730A1 (en) | 2004-02-13 | 2005-02-07 | Non-switching pre-and post-disturb compensational pulses |
KR1020067018762A KR100823007B1 (ko) | 2004-02-13 | 2005-02-07 | 넌-스위칭 사전 및 사후-방해 보상 펄스들 |
CA002555581A CA2555581A1 (en) | 2004-02-13 | 2005-02-07 | Non-switching pre-and post-disturb compensational pulses |
JP2006553076A JP2007522602A (ja) | 2004-02-13 | 2005-02-07 | 非スイッチング妨害前および妨害後補償パルス |
EP05710941A EP1719136A1 (en) | 2004-02-13 | 2005-02-07 | Non-switching pre-and post-disturb compensational pulses |
CNA2005800048122A CN1918662A (zh) | 2004-02-13 | 2005-02-07 | 非切换前置和后置干扰补偿脉冲 |
RU2006130851/09A RU2326456C1 (ru) | 2004-02-13 | 2005-02-07 | Способ управления запоминающим устройством с подачей компенсационных импульсов до и после помехи |
US11/053,905 US7020005B2 (en) | 2004-02-13 | 2005-02-10 | Non-switching pre- and post- disturb compensational pulses |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20040644A NO320149B1 (no) | 2004-02-13 | 2004-02-13 | Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning |
Publications (3)
Publication Number | Publication Date |
---|---|
NO20040644D0 NO20040644D0 (no) | 2004-02-13 |
NO20040644L NO20040644L (no) | 2005-08-15 |
NO320149B1 true NO320149B1 (no) | 2005-10-31 |
Family
ID=34793421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20040644A NO320149B1 (no) | 2004-02-13 | 2004-02-13 | Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning |
Country Status (10)
Country | Link |
---|---|
US (1) | US7020005B2 (ko) |
EP (1) | EP1719136A1 (ko) |
JP (1) | JP2007522602A (ko) |
KR (1) | KR100823007B1 (ko) |
CN (1) | CN1918662A (ko) |
AU (1) | AU2005213099A1 (ko) |
CA (1) | CA2555581A1 (ko) |
NO (1) | NO320149B1 (ko) |
RU (1) | RU2326456C1 (ko) |
WO (1) | WO2005078730A1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006228261A (ja) * | 2005-02-15 | 2006-08-31 | Micron Technology Inc | デジット線絶縁ゲートの負電圧駆動 |
US7916544B2 (en) * | 2008-01-25 | 2011-03-29 | Micron Technology, Inc. | Random telegraph signal noise reduction scheme for semiconductor memories |
KR100913424B1 (ko) * | 2008-07-01 | 2009-08-21 | 한국과학기술원 | 수동 매트릭스-어드레스 가능한 메모리 장치 |
US7821808B2 (en) * | 2009-01-30 | 2010-10-26 | Seagate Technology Llc | Multilayer ferroelectric data storage system with regenerative read |
WO2016004388A1 (en) * | 2014-07-03 | 2016-01-07 | Yale University | Circuitry for ferroelectric fet-based dynamic random access memory and non-volatile memory |
US9857218B2 (en) * | 2015-03-09 | 2018-01-02 | Rockwell Automation Technologies, Inc. | Pulsed sensing using multiple pulse samples |
US9641259B1 (en) | 2016-06-20 | 2017-05-02 | Rockwell Automation Technologies, Inc. | System and method for pulsed based receiver photo sensor |
US9613676B1 (en) * | 2016-06-29 | 2017-04-04 | Micron Technology, Inc. | Writing to cross-point non-volatile memory |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3002182A (en) | 1956-12-10 | 1961-09-26 | Bell Telephone Labor Inc | Ferroelectric storage circuits and methods |
EP1439544B1 (en) * | 1997-11-14 | 2009-01-14 | Rohm Co., Ltd. | Semiconductor memory and method for accessing semiconductor memory |
NO312699B1 (no) * | 2000-07-07 | 2002-06-17 | Thin Film Electronics Asa | Adressering av minnematrise |
JP4024166B2 (ja) * | 2002-03-20 | 2007-12-19 | 三洋電機株式会社 | 強誘電体メモリ |
NO317905B1 (no) | 2002-09-11 | 2004-12-27 | Thin Film Electronics Asa | Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art |
US6856534B2 (en) | 2002-09-30 | 2005-02-15 | Texas Instruments Incorporated | Ferroelectric memory with wide operating voltage and multi-bit storage per cell |
-
2004
- 2004-02-13 NO NO20040644A patent/NO320149B1/no unknown
-
2005
- 2005-02-07 CN CNA2005800048122A patent/CN1918662A/zh active Pending
- 2005-02-07 WO PCT/NO2005/000044 patent/WO2005078730A1/en active Application Filing
- 2005-02-07 AU AU2005213099A patent/AU2005213099A1/en not_active Abandoned
- 2005-02-07 RU RU2006130851/09A patent/RU2326456C1/ru not_active IP Right Cessation
- 2005-02-07 CA CA002555581A patent/CA2555581A1/en not_active Abandoned
- 2005-02-07 EP EP05710941A patent/EP1719136A1/en not_active Withdrawn
- 2005-02-07 KR KR1020067018762A patent/KR100823007B1/ko not_active IP Right Cessation
- 2005-02-07 JP JP2006553076A patent/JP2007522602A/ja not_active Abandoned
- 2005-02-10 US US11/053,905 patent/US7020005B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100823007B1 (ko) | 2008-04-17 |
NO20040644L (no) | 2005-08-15 |
US20050248979A1 (en) | 2005-11-10 |
EP1719136A1 (en) | 2006-11-08 |
CA2555581A1 (en) | 2005-08-25 |
US7020005B2 (en) | 2006-03-28 |
RU2006130851A (ru) | 2008-03-20 |
AU2005213099A1 (en) | 2005-08-25 |
NO20040644D0 (no) | 2004-02-13 |
JP2007522602A (ja) | 2007-08-09 |
KR20060111721A (ko) | 2006-10-27 |
WO2005078730A1 (en) | 2005-08-25 |
CN1918662A (zh) | 2007-02-21 |
RU2326456C1 (ru) | 2008-06-10 |
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