NO20120828A1 - Fremgangsmate for a redusere deponeringen av silisium pa reaktorvegger ved benyttelse av perifert silisiumtetraklorid - Google Patents
Fremgangsmate for a redusere deponeringen av silisium pa reaktorvegger ved benyttelse av perifert silisiumtetraklorid Download PDFInfo
- Publication number
- NO20120828A1 NO20120828A1 NO20120828A NO20120828A NO20120828A1 NO 20120828 A1 NO20120828 A1 NO 20120828A1 NO 20120828 A NO20120828 A NO 20120828A NO 20120828 A NO20120828 A NO 20120828A NO 20120828 A1 NO20120828 A1 NO 20120828A1
- Authority
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- Norway
- Prior art keywords
- gas
- silicon
- reaction chamber
- openings
- source
- Prior art date
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 178
- 239000010703 silicon Substances 0.000 title claims abstract description 178
- 238000000034 method Methods 0.000 title claims abstract description 68
- 230000002093 peripheral effect Effects 0.000 title claims description 52
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 title claims description 24
- 239000005049 silicon tetrachloride Substances 0.000 title claims description 24
- 230000008021 deposition Effects 0.000 title description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 180
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 36
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 30
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 322
- 238000006243 chemical reaction Methods 0.000 claims description 157
- 238000009826 distribution Methods 0.000 claims description 69
- 239000012530 fluid Substances 0.000 claims description 57
- 150000001875 compounds Chemical class 0.000 claims description 56
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 53
- 238000004891 communication Methods 0.000 claims description 51
- 239000001257 hydrogen Substances 0.000 claims description 49
- 229910052739 hydrogen Inorganic materials 0.000 claims description 49
- 239000011856 silicon-based particle Substances 0.000 claims description 22
- 239000000047 product Substances 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 239000006227 byproduct Substances 0.000 claims description 14
- 229910000039 hydrogen halide Inorganic materials 0.000 claims description 7
- 239000012433 hydrogen halide Substances 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 claims description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 3
- JHGCXUUFRJCMON-UHFFFAOYSA-J silicon(4+);tetraiodide Chemical compound [Si+4].[I-].[I-].[I-].[I-] JHGCXUUFRJCMON-UHFFFAOYSA-J 0.000 claims description 3
- IBOKZQNMFSHYNQ-UHFFFAOYSA-N tribromosilane Chemical compound Br[SiH](Br)Br IBOKZQNMFSHYNQ-UHFFFAOYSA-N 0.000 claims description 3
- WPPVEXTUHHUEIV-UHFFFAOYSA-N trifluorosilane Chemical compound F[SiH](F)F WPPVEXTUHHUEIV-UHFFFAOYSA-N 0.000 claims description 3
- DNAPJAGHXMPFLD-UHFFFAOYSA-N triiodosilane Chemical compound I[SiH](I)I DNAPJAGHXMPFLD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 238000009827 uniform distribution Methods 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 33
- 238000000151 deposition Methods 0.000 description 16
- 238000005243 fluidization Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 239000012159 carrier gas Substances 0.000 description 12
- 238000001816 cooling Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- -1 for example Chemical class 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical group 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000011027 product recovery Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 235000020030 perry Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10773—Halogenated silanes obtained by disproportionation and molecular rearrangement of halogenated silanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1818—Feeding of the fluidising gas
- B01J8/1827—Feeding of the fluidising gas the fluidising gas being a reactant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
- B01J8/44—Fluidisation grids
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
- C01B33/031—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent by decomposition of silicon tetraiodide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23C—METHODS OR APPARATUS FOR COMBUSTION USING FLUID FUEL OR SOLID FUEL SUSPENDED IN A CARRIER GAS OR AIR
- F23C10/00—Fluidised bed combustion apparatus
- F23C10/18—Details; Accessories
- F23C10/20—Inlets for fluidisation air, e.g. grids; Bottoms
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B15/00—Fluidised-bed furnaces; Other furnaces using or treating finely-divided materials in dispersion
- F27B15/02—Details, accessories, or equipment peculiar to furnaces of these types
- F27B15/10—Arrangements of air or gas supply devices
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Dispersion Chemistry (AREA)
- Silicon Compounds (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29069209P | 2009-12-29 | 2009-12-29 | |
PCT/US2010/062088 WO2011090689A1 (fr) | 2009-12-29 | 2010-12-23 | Procédés pour réduire le dépôt de silicium sur des parois de réacteur utilisant du tétrachlorure de silicium périphérique |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20120828A1 true NO20120828A1 (no) | 2012-07-17 |
Family
ID=43827215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20120828A NO20120828A1 (no) | 2009-12-29 | 2012-07-17 | Fremgangsmate for a redusere deponeringen av silisium pa reaktorvegger ved benyttelse av perifert silisiumtetraklorid |
Country Status (10)
Country | Link |
---|---|
US (2) | US20110158888A1 (fr) |
EP (1) | EP2519343A1 (fr) |
JP (1) | JP2013515673A (fr) |
KR (1) | KR20120110109A (fr) |
CN (1) | CN102686307A (fr) |
IN (1) | IN2012DN05176A (fr) |
NO (1) | NO20120828A1 (fr) |
RU (1) | RU2012132435A (fr) |
TW (1) | TW201136830A (fr) |
WO (1) | WO2011090689A1 (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8906313B2 (en) | 2008-06-30 | 2014-12-09 | Sunedison, Inc. | Fluidized bed reactor systems |
KR101329030B1 (ko) | 2010-10-01 | 2013-11-13 | 주식회사 실리콘밸류 | 유동층 반응기 |
EP2654912B1 (fr) | 2010-12-20 | 2016-04-20 | MEMC Electronic Materials, Inc. | Fabrication de silicium polycristallin dans procédés à boucle sensiblement fermée qui entraînent des opérations de dismutation |
US20130129570A1 (en) * | 2011-04-20 | 2013-05-23 | Siliconvalue Llc. | Polycrystal silicon manufacturing apparatus |
KR101329035B1 (ko) | 2011-04-20 | 2013-11-13 | 주식회사 실리콘밸류 | 유동층 반응기 |
KR102165127B1 (ko) * | 2011-09-30 | 2020-10-13 | 코너 스타 리미티드 | 유동층 반응기에서의 실란의 열 분해에 의한 다결정 규소의 제조 |
KR102050114B1 (ko) * | 2011-09-30 | 2019-11-28 | 코너 스타 리미티드 | 유동층 반응기에서의 실란의 열 분해에 의한 다결정 실리콘의 제조 |
US20130149228A1 (en) * | 2011-12-09 | 2013-06-13 | Siliken Chemicals, S.L. | Method, system and apparatus for controlling particle size in a fluidized bed reactor |
US8875728B2 (en) | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
CN104583122B (zh) | 2012-08-29 | 2017-09-05 | 赫姆洛克半导体运营有限责任公司 | 锥形流化床反应器及其使用方法 |
DE102013206236A1 (de) * | 2013-04-09 | 2014-10-09 | Wacker Chemie Ag | Gasverteiler für Siemens-Reaktor |
DE102013208071A1 (de) * | 2013-05-02 | 2014-11-06 | Wacker Chemie Ag | Wirbelschichtreaktor und Verfahren zur Herstellung von granularem Polysilicium |
CN103553047A (zh) * | 2013-11-06 | 2014-02-05 | 苏州协鑫工业应用研究院有限公司 | 一种用于在反应器中生产多晶硅产品的方法及系统 |
US10252916B2 (en) * | 2014-09-04 | 2019-04-09 | Corner Star Limited | Methods for separating halosilanes |
US10518237B2 (en) | 2015-04-01 | 2019-12-31 | Hanwha Chemical Corporation | Gas distribution unit for fluidized bed reactor system, fluidized bed reactor system having the gas distribution unit, and method for preparing granular polycrystalline silicon using the fluidized bed reactor system |
CN105170037B (zh) * | 2015-08-27 | 2018-09-11 | 攀钢集团攀枝花钢铁研究院有限公司 | 流化床反应器 |
CN105363391B (zh) * | 2015-11-12 | 2018-08-14 | 攀钢集团攀枝花钢铁研究院有限公司 | 用于流化床反应器的多管式气体分布器的导流结构 |
WO2017100564A1 (fr) | 2015-12-11 | 2017-06-15 | Sunedison, Inc. | Systèmes réacteurs comportant plusieurs équilibreurs de pression |
WO2017100404A1 (fr) | 2015-12-11 | 2017-06-15 | Sunedison, Inc. | Systèmes réacteurs comportant des équilibreurs de pression externes |
US11242253B2 (en) | 2017-01-16 | 2022-02-08 | Tokuyama Corporation | Method for producing polycrystalline silicon |
DE102017125221A1 (de) | 2017-10-27 | 2019-05-02 | Nexwafe Gmbh | Verfahren und Vorrichtung zur Entfernung von Verunreinigungen aus Chlorsilanen |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2468508A (en) * | 1945-02-20 | 1949-04-26 | Standard Oil Dev Co | Conversion processes in the presence of a dense turbulent body of finely divided solid material |
US2487984A (en) * | 1945-10-31 | 1949-11-15 | Universal Oil Prod Co | Fluid distributing plate |
US2740752A (en) * | 1951-01-24 | 1956-04-03 | Gulf Research Development Co | Fluid catalytic process and apparatus |
US3016624A (en) * | 1959-01-02 | 1962-01-16 | Foster Wheeler Corp | Gas distribution baffle |
US3636923A (en) * | 1970-03-04 | 1972-01-25 | Atomic Energy Commission | Apparatus for coating microspheres with pyrolytic carbon |
US3933985A (en) * | 1971-09-24 | 1976-01-20 | Motorola, Inc. | Process for production of polycrystalline silicon |
US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
US4213937A (en) | 1976-09-22 | 1980-07-22 | Texas Instruments Incorporated | Silicon refinery |
US4170667A (en) | 1977-01-31 | 1979-10-09 | Motorola, Inc. | Process for manufacturing pure polycrystalline silicon |
US4318942A (en) | 1978-08-18 | 1982-03-09 | J. C. Schumacher Company | Process for producing polycrystalline silicon |
US4464222A (en) | 1980-07-28 | 1984-08-07 | Monsanto Company | Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases |
JPS58185426A (ja) * | 1982-04-20 | 1983-10-29 | Hitachi Ltd | 高純度シリコンの製造方法 |
JPS5945917A (ja) | 1982-09-02 | 1984-03-15 | Denki Kagaku Kogyo Kk | 多結晶シリコンの連続的製法 |
US4818495A (en) * | 1982-11-05 | 1989-04-04 | Union Carbide Corporation | Reactor for fluidized bed silane decomposition |
JPS59107917A (ja) | 1982-12-07 | 1984-06-22 | Denki Kagaku Kogyo Kk | 多結晶シリコンの製造装置 |
US4491604A (en) | 1982-12-27 | 1985-01-01 | Lesk Israel A | Silicon deposition process |
US4529576A (en) * | 1982-12-27 | 1985-07-16 | Sri International | Process and apparatus for obtaining silicon from fluosilicic acid |
JPS6279843A (ja) * | 1985-10-03 | 1987-04-13 | Agency Of Ind Science & Technol | 流動層合成装置のガス分散板 |
US4868013A (en) | 1987-08-21 | 1989-09-19 | Ethyl Corporation | Fluidized bed process |
DE3839705A1 (de) * | 1987-11-25 | 1989-06-08 | Union Carbide Corp | Beheizter wirbelschichtreaktor |
CA1332782C (fr) | 1988-03-31 | 1994-11-01 | Richard Andrew Van Slooten | Reacteur a lit fluidise a zone chauffante annulaire |
JPH02279512A (ja) | 1989-04-20 | 1990-11-15 | Osaka Titanium Co Ltd | 高純度多結晶シリコンの製造方法 |
JPH04297515A (ja) * | 1991-03-25 | 1992-10-21 | Nkk Corp | 鉄鉱石の溶融還元設備における予備還元炉 |
JPH06127924A (ja) | 1992-10-16 | 1994-05-10 | Tonen Chem Corp | 多結晶シリコンの製造方法 |
GB2271518B (en) * | 1992-10-16 | 1996-09-25 | Korea Res Inst Chem Tech | Heating of fluidized bed reactor by microwave |
JPH06191818A (ja) * | 1992-12-22 | 1994-07-12 | Tonen Chem Corp | 多結晶シリコンの製造方法 |
US5810934A (en) | 1995-06-07 | 1998-09-22 | Advanced Silicon Materials, Inc. | Silicon deposition reactor apparatus |
AU3191297A (en) * | 1996-06-21 | 1998-01-07 | Ebara Corporation | Method and apparatus for gasifying fluidized bed |
JP3737863B2 (ja) * | 1996-11-26 | 2006-01-25 | 株式会社トクヤマ | 粒状ポリシリコンの製造方法 |
DE19735378A1 (de) | 1997-08-14 | 1999-02-18 | Wacker Chemie Gmbh | Verfahren zur Herstellung von hochreinem Siliciumgranulat |
GB9814064D0 (en) * | 1998-06-29 | 1998-08-26 | Boc Group Plc | Partial combustion of hydrogen sulphide |
DE19948395A1 (de) | 1999-10-06 | 2001-05-03 | Wacker Chemie Gmbh | Strahlungsbeheizter Fliessbettreaktor |
US6368568B1 (en) | 2000-02-18 | 2002-04-09 | Stephen M Lord | Method for improving the efficiency of a silicon purification process |
US6719952B1 (en) | 2000-02-21 | 2004-04-13 | Westinghouse Electric Company Llc | Fluidized bed reaction design |
US6451277B1 (en) | 2000-06-06 | 2002-09-17 | Stephen M Lord | Method of improving the efficiency of a silicon purification process |
KR100731558B1 (ko) | 2000-08-02 | 2007-06-22 | 미쯔비시 마테리알 폴리실리콘 가부시끼가이샤 | 육염화이규소의 제조 방법 |
JP2002129455A (ja) * | 2000-10-17 | 2002-05-09 | Ibiden Co Ltd | 触媒コンバータ用保持シール材及びその製造方法、触媒コンバータ |
US6827786B2 (en) | 2000-12-26 | 2004-12-07 | Stephen M Lord | Machine for production of granular silicon |
KR100411180B1 (ko) * | 2001-01-03 | 2003-12-18 | 한국화학연구원 | 다결정실리콘의 제조방법과 그 장치 |
EP1437327B1 (fr) | 2001-10-19 | 2007-04-11 | Tokuyama Corporation | Procede de production de silicium |
JP4038110B2 (ja) * | 2001-10-19 | 2008-01-23 | 株式会社トクヤマ | シリコンの製造方法 |
WO2004013044A1 (fr) | 2002-07-22 | 2004-02-12 | Lord Stephen M | Pprocedes permettant de chauffer un appareil de depot de silicium en lit fluidise |
US7179426B2 (en) * | 2002-09-12 | 2007-02-20 | Chevron Phillips Chemical Company, Lp | Large catalyst activator |
US20040241867A1 (en) | 2003-01-17 | 2004-12-02 | Jones Mark L. | Method of analyzing a wafer for metal impurities |
JP5086256B2 (ja) | 2005-07-19 | 2012-11-28 | アールイーシー シリコン インコーポレイテッド | シリコン噴流流動層 |
DE102005042753A1 (de) * | 2005-09-08 | 2007-03-15 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Herstellung von granulatförmigem polykristallinem Silicium in einem Wirbelschichtreaktor |
AT503349B1 (de) | 2005-12-23 | 2008-09-15 | Siemens Vai Metals Tech Gmbh | Verteilerboden |
CA2634862C (fr) * | 2005-12-23 | 2014-08-05 | Siemens Vai Metals Technologies Gmbh & Co | Fond de distribution pour reacteur dont la base comporte plusieurs ouvertures, celles a proximite des parois etant placees selon une distance entre la paroi et leur centre de 1 a 10 fois le diametre desdites ouverturs |
KR100661284B1 (ko) * | 2006-02-14 | 2006-12-27 | 한국화학연구원 | 유동층 반응기를 이용한 다결정실리콘 제조 방법 |
KR100813131B1 (ko) * | 2006-06-15 | 2008-03-17 | 한국화학연구원 | 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법 |
US7935327B2 (en) | 2006-08-30 | 2011-05-03 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
US8906313B2 (en) | 2008-06-30 | 2014-12-09 | Sunedison, Inc. | Fluidized bed reactor systems |
US7927984B2 (en) * | 2008-11-05 | 2011-04-19 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition |
-
2010
- 2010-12-23 US US12/977,739 patent/US20110158888A1/en not_active Abandoned
- 2010-12-23 US US12/977,849 patent/US8828324B2/en active Active
- 2010-12-23 KR KR1020127016871A patent/KR20120110109A/ko not_active Application Discontinuation
- 2010-12-23 JP JP2012547179A patent/JP2013515673A/ja active Pending
- 2010-12-23 CN CN2010800600015A patent/CN102686307A/zh active Pending
- 2010-12-23 WO PCT/US2010/062088 patent/WO2011090689A1/fr active Application Filing
- 2010-12-23 EP EP10805357A patent/EP2519343A1/fr not_active Withdrawn
- 2010-12-23 RU RU2012132435/05A patent/RU2012132435A/ru not_active Application Discontinuation
- 2010-12-29 TW TW99146697A patent/TW201136830A/zh unknown
-
2012
- 2012-06-12 IN IN5176DEN2012 patent/IN2012DN05176A/en unknown
- 2012-07-17 NO NO20120828A patent/NO20120828A1/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2011090689A4 (fr) | 2011-09-22 |
WO2011090689A1 (fr) | 2011-07-28 |
JP2013515673A (ja) | 2013-05-09 |
US20110158857A1 (en) | 2011-06-30 |
EP2519343A1 (fr) | 2012-11-07 |
IN2012DN05176A (fr) | 2015-10-23 |
TW201136830A (en) | 2011-11-01 |
RU2012132435A (ru) | 2014-02-10 |
KR20120110109A (ko) | 2012-10-09 |
US8828324B2 (en) | 2014-09-09 |
CN102686307A (zh) | 2012-09-19 |
US20110158888A1 (en) | 2011-06-30 |
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