NO20082281L - Pastamateriale og solcelleelement hvor dette anvendes - Google Patents

Pastamateriale og solcelleelement hvor dette anvendes

Info

Publication number
NO20082281L
NO20082281L NO20082281A NO20082281A NO20082281L NO 20082281 L NO20082281 L NO 20082281L NO 20082281 A NO20082281 A NO 20082281A NO 20082281 A NO20082281 A NO 20082281A NO 20082281 L NO20082281 L NO 20082281L
Authority
NO
Norway
Prior art keywords
solar cell
cell element
paste material
electrode
semiconductor substrate
Prior art date
Application number
NO20082281A
Other languages
English (en)
Other versions
NO339124B1 (no
Inventor
Gaochao Lai
Takashi Watsuji
Haruzo Katoh
Original Assignee
Toyo Aluminium Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Aluminium Kk filed Critical Toyo Aluminium Kk
Publication of NO20082281L publication Critical patent/NO20082281L/no
Publication of NO339124B1 publication Critical patent/NO339124B1/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Sustainable Energy (AREA)
  • Dispersion Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)

Abstract

Oppfinnelsen tilveiebringer et solcelleelement omfattende et pastamateriale som kan undertrykke forekomst av blærer eller aluminiumkorn i et baksideelektrodelag under brenning, og videre kan redusere deformasjonen av silisiumhalvledersubstratet, og en elektrode dannet ved å anvende materialet. Pastamaterialet er et pastamateriale for forming av en elektrode (8) på et silisiumhalvledersubstrat (1) og omfatter aluminiumpulver, en organisk bærer og et hydroksid. Solcelleelementet omfatter en elektrode (8) dannet ved å belegge silisiumhalvledersubstratet (1) med pastamaterialet angitt over, og så brenne belegget.
NO20082281A 2005-10-20 2008-05-19 Pastamateriale og solcelleelement hvor dette anvendes NO339124B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005306025 2005-10-20
PCT/JP2006/318816 WO2007046214A1 (ja) 2005-10-20 2006-09-22 ペースト組成物およびそれを用いた太陽電池素子

Publications (2)

Publication Number Publication Date
NO20082281L true NO20082281L (no) 2008-05-19
NO339124B1 NO339124B1 (no) 2016-11-14

Family

ID=37962312

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20082281A NO339124B1 (no) 2005-10-20 2008-05-19 Pastamateriale og solcelleelement hvor dette anvendes

Country Status (10)

Country Link
US (1) US8877100B2 (no)
EP (1) EP1939943B1 (no)
JP (1) JP4949263B2 (no)
KR (1) KR101031060B1 (no)
CN (1) CN100550431C (no)
DE (1) DE602006021767D1 (no)
ES (1) ES2361974T3 (no)
NO (1) NO339124B1 (no)
TW (1) TWI382546B (no)
WO (1) WO2007046214A1 (no)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008306023A (ja) * 2007-06-08 2008-12-18 Toyo Aluminium Kk ペースト組成物と太陽電池素子
US20140335651A1 (en) * 2008-11-14 2014-11-13 Sichuan Yinhe Chemical Co., Ltd. Inks and pastes for solar cell fabrication
US8017428B2 (en) * 2009-06-10 2011-09-13 E. I. Du Pont De Nemours And Company Process of forming a silicon solar cell
KR20110025614A (ko) * 2009-09-04 2011-03-10 동우 화인켐 주식회사 태양전지의 후면 전극용 알루미늄 페이스트
KR20110040083A (ko) * 2009-10-13 2011-04-20 동우 화인켐 주식회사 태양전지의 후면 전극용 알루미늄 페이스트
KR101113503B1 (ko) * 2009-10-30 2012-02-29 고려대학교 산학협력단 유도전류 장치를 이용한 실리콘 태양전지의 제조 방법
CN102834927A (zh) * 2010-04-02 2012-12-19 株式会社则武 太阳能电池用糊料组合物及其制造方法和太阳能电池
US20120152342A1 (en) * 2010-12-16 2012-06-21 E.I. Du Pont De Nemours And Company Aluminum paste compositions comprising metal phosphates and their use in manufacturing solar cells
US20120152344A1 (en) * 2010-12-16 2012-06-21 E.I. Du Pont De Nemours And Company Aluminum paste compositions comprising calcium oxide and their use in manufacturing solar cells
US20120152341A1 (en) * 2010-12-16 2012-06-21 E.I. Du Pont De Nemours And Company Low bow aluminum paste with an alkaline earth metal salt additive for solar cells
CN102157220B (zh) * 2011-02-28 2013-09-18 张振中 晶体硅太阳能电池正面栅线电极专用Ag浆
KR101276669B1 (ko) * 2011-07-15 2013-06-19 주식회사 케이씨씨 금속-함유 유기계 첨가제를 포함하는 실리콘 태양전지용 후면 전극 조성물
JP7264674B2 (ja) * 2019-03-13 2023-04-25 東洋アルミニウム株式会社 バックコンタクト型太陽電池セルの製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6193505A (ja) * 1984-10-12 1986-05-12 株式会社東海理化電機製作所 導電性ペ−スト
JPH0731931B2 (ja) * 1986-04-08 1995-04-10 ティーディーケイ株式会社 厚膜ペ−スト
JPH07117638B2 (ja) * 1987-10-30 1995-12-18 キヤノン株式会社 振動波モータを用いたレンズ系駆動装置
JPH07103331B2 (ja) * 1987-10-30 1995-11-08 イビデン株式会社 樹脂系導電ペースト
JPH03116608A (ja) * 1989-09-29 1991-05-17 Tdk Corp 導体ペーストおよび導体
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KR101098283B1 (ko) * 2003-04-28 2011-12-23 쇼와 덴코 가부시키가이샤 밸브 작용 금속 소결체, 그 제조방법 및 고체 전해 콘덴서
JP2004330247A (ja) 2003-05-08 2004-11-25 Murata Mfg Co Ltd ニッケル粉末、及び導電性ペースト、並びに積層セラミック電子部品
JP2004355862A (ja) 2003-05-27 2004-12-16 Ngk Spark Plug Co Ltd 導体用ペースト、セラミック配線基板及びその製造方法
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Also Published As

Publication number Publication date
DE602006021767D1 (de) 2011-06-16
US20090223563A1 (en) 2009-09-10
TWI382546B (zh) 2013-01-11
CN101292363A (zh) 2008-10-22
KR101031060B1 (ko) 2011-04-25
NO339124B1 (no) 2016-11-14
EP1939943A1 (en) 2008-07-02
ES2361974T3 (es) 2011-06-24
KR20080068638A (ko) 2008-07-23
JP4949263B2 (ja) 2012-06-06
CN100550431C (zh) 2009-10-14
TW200725923A (en) 2007-07-01
EP1939943B1 (en) 2011-05-04
WO2007046214A1 (ja) 2007-04-26
EP1939943A4 (en) 2009-12-30
JPWO2007046214A1 (ja) 2009-04-23
US8877100B2 (en) 2014-11-04

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