NO136126B - - Google Patents
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- Publication number
- NO136126B NO136126B NO3912/73A NO391273A NO136126B NO 136126 B NO136126 B NO 136126B NO 3912/73 A NO3912/73 A NO 3912/73A NO 391273 A NO391273 A NO 391273A NO 136126 B NO136126 B NO 136126B
- Authority
- NO
- Norway
- Prior art keywords
- tantalum
- aluminium
- capacitors
- atomic percent
- layers
- Prior art date
Links
- 229910052715 tantalum Inorganic materials 0.000 claims description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 16
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- -1 tantalum oxide nitride Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722253490 DE2253490C3 (de) | 1972-10-31 | Aluminium-Tantal-Schichten für Dünnschichtschaltungen sowie diskrete Widerstände und Kondensatoren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO136126B true NO136126B (fr) | 1977-04-12 |
| NO136126C NO136126C (no) | 1977-07-20 |
Family
ID=5860570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO3912/73A NO136126C (no) | 1972-10-31 | 1973-10-09 | Tyntskiktkoblinger s}vel som diskrete motstander og kondensatorer. |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US3955039A (fr) |
| JP (1) | JPS5815933B2 (fr) |
| AT (1) | AT341630B (fr) |
| BE (1) | BE806831A (fr) |
| CH (1) | CH559410A5 (fr) |
| FR (1) | FR2204850B1 (fr) |
| GB (1) | GB1398254A (fr) |
| IN (1) | IN142001B (fr) |
| IT (1) | IT998990B (fr) |
| LU (1) | LU67831A1 (fr) |
| NL (1) | NL183111C (fr) |
| NO (1) | NO136126C (fr) |
| SE (1) | SE392360B (fr) |
| SU (1) | SU518166A3 (fr) |
| YU (1) | YU283373A (fr) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2546675C3 (de) * | 1975-10-17 | 1979-08-02 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer Dünnschichtschaltung |
| DE2703636C3 (de) * | 1977-01-28 | 1985-10-10 | Siemens AG, 1000 Berlin und 8000 München | Regenerierfähiger elektrischer Kondensator und Verfahren zu seiner Herstellung |
| DE2719988C2 (de) * | 1977-05-04 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Amorphe, Tantal enthaltende mindestens bis 300 Grad C temperaturstabile Metallschicht und Verfahren zu ihrer Herstellung |
| JPS6045008A (ja) * | 1983-08-22 | 1985-03-11 | 松下電器産業株式会社 | 薄膜コンデンサの製造方法 |
| US4671110A (en) * | 1984-12-06 | 1987-06-09 | Kock Michiel D De | Level sensing device |
| EP0289835B1 (fr) * | 1987-04-28 | 1991-12-27 | Yoshida Kogyo K.K. | Alliages amorphes à base d'aluminium |
| FR2642891B1 (fr) * | 1989-02-03 | 1993-12-24 | Marchal Equip Automobiles | Resistance shunt |
| US5142308A (en) * | 1989-02-28 | 1992-08-25 | Canon Kabushiki Kaisha | Ink jet head having heat generating resistor made of non-single crystalline substance containing ir and ta |
| US5500301A (en) * | 1991-03-07 | 1996-03-19 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| DE69321862T2 (de) * | 1992-04-07 | 1999-05-12 | Koji Hashimoto | Temperatur resistente amorphe Legierungen |
| US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
| US6140909A (en) * | 1999-03-23 | 2000-10-31 | Industrial Technology Research Institute | Heat-generating resistor and use thereof |
| US6692586B2 (en) | 2001-05-23 | 2004-02-17 | Rolls-Royce Corporation | High temperature melting braze materials for bonding niobium based alloys |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3013193A (en) * | 1960-01-11 | 1961-12-12 | Battelle Development Corp | Compound semiconductor devices |
| US3627577A (en) * | 1968-05-22 | 1971-12-14 | Bell Telephone Labor Inc | Thin film resistors |
| US3737343A (en) * | 1971-04-19 | 1973-06-05 | Bell Telephone Labor Inc | Technique for the preparation of ion implanted tantalum-aluminum alloy |
-
1973
- 1973-06-20 LU LU67831A patent/LU67831A1/xx unknown
- 1973-08-13 GB GB3819073A patent/GB1398254A/en not_active Expired
- 1973-08-28 NL NLAANVRAGE7311843,A patent/NL183111C/xx not_active IP Right Cessation
- 1973-10-09 NO NO3912/73A patent/NO136126C/no unknown
- 1973-10-11 CH CH1447573A patent/CH559410A5/xx not_active IP Right Cessation
- 1973-10-19 AT AT889673A patent/AT341630B/de not_active IP Right Cessation
- 1973-10-19 US US05/408,100 patent/US3955039A/en not_active Expired - Lifetime
- 1973-10-25 SE SE7314493A patent/SE392360B/xx unknown
- 1973-10-26 IT IT30613/73A patent/IT998990B/it active
- 1973-10-30 FR FR7338613A patent/FR2204850B1/fr not_active Expired
- 1973-10-30 SU SU1968808A patent/SU518166A3/ru active
- 1973-10-31 BE BE137338A patent/BE806831A/fr not_active IP Right Cessation
- 1973-10-31 YU YU02833/73A patent/YU283373A/xx unknown
- 1973-10-31 JP JP48122677A patent/JPS5815933B2/ja not_active Expired
-
1974
- 1974-03-25 IN IN660/CAL/1974A patent/IN142001B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE806831A (fr) | 1974-02-15 |
| SU518166A3 (ru) | 1976-06-15 |
| YU283373A (en) | 1982-06-30 |
| NL7311843A (fr) | 1974-05-02 |
| IN142001B (fr) | 1977-05-14 |
| US3955039A (en) | 1976-05-04 |
| GB1398254A (en) | 1975-06-18 |
| IT998990B (it) | 1976-02-20 |
| DE2253490A1 (de) | 1974-07-11 |
| CH559410A5 (fr) | 1975-02-28 |
| FR2204850B1 (fr) | 1978-06-23 |
| FR2204850A1 (fr) | 1974-05-24 |
| DE2253490B2 (de) | 1975-10-30 |
| NL183111C (nl) | 1988-07-18 |
| NO136126C (no) | 1977-07-20 |
| AU6079473A (en) | 1975-03-27 |
| JPS5815933B2 (ja) | 1983-03-28 |
| SE392360B (sv) | 1977-03-21 |
| LU67831A1 (fr) | 1973-08-28 |
| AT341630B (de) | 1978-02-27 |
| JPS4977174A (fr) | 1974-07-25 |
| ATA889673A (de) | 1977-06-15 |
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