NO120580B - - Google Patents

Download PDF

Info

Publication number
NO120580B
NO120580B NO159442A NO15944265A NO120580B NO 120580 B NO120580 B NO 120580B NO 159442 A NO159442 A NO 159442A NO 15944265 A NO15944265 A NO 15944265A NO 120580 B NO120580 B NO 120580B
Authority
NO
Norway
Prior art keywords
chloro
solution
phenyl
isoquinoline
general formula
Prior art date
Application number
NO159442A
Other languages
English (en)
Norwegian (no)
Inventor
H Ott
Original Assignee
Sandoz Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Priority claimed from US478351A external-priority patent/US3383760A/en
Application filed by Sandoz Ag filed Critical Sandoz Ag
Priority to NO325469A priority Critical patent/NO123392B/no
Publication of NO120580B publication Critical patent/NO120580B/no

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D471/00Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04Ortho-condensed systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/55Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups
NO159442A 1964-08-07 1965-08-23 NO120580B (xx)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NO325469A NO123392B (xx) 1964-08-07 1969-08-08

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (1)

Publication Number Publication Date
NO120580B true NO120580B (xx) 1970-11-09

Family

ID=27541415

Family Applications (1)

Application Number Title Priority Date Filing Date
NO159442A NO120580B (xx) 1964-08-07 1965-08-23

Country Status (17)

Country Link
BE (1) BE668687A (xx)
BG (1) BG17566A3 (xx)
BR (4) BR6572393D0 (xx)
CA (1) CA953297A (xx)
CH (5) CH460031A (xx)
CY (1) CY613A (xx)
DE (3) DE1514363B1 (xx)
ES (1) ES337005A1 (xx)
FI (1) FI46968C (xx)
FR (2) FR5364M (xx)
GB (7) GB1084598A (xx)
IL (1) IL24214A (xx)
MC (1) MC542A1 (xx)
MY (1) MY7100223A (xx)
NL (4) NL6510287A (xx)
NO (1) NO120580B (xx)
SE (5) SE312863B (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (xx) * 1971-10-01 1976-05-22
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor component having p-n junctions separated by trenches and its manufacturing process.
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Semiconductor device with passivated sides and method for manufacturing it.
US5401690A (en) * 1993-07-08 1995-03-28 Goodark Electronic Corp. Method for making circular diode chips through glass passivation
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL120075C (xx) * 1960-02-04
NL284599A (xx) * 1961-05-26 1900-01-01

Also Published As

Publication number Publication date
GB1112334A (en) 1968-05-01
FR4985M (xx) 1967-04-10
BR6681707D0 (pt) 1973-09-06
DE1564537B2 (de) 1973-01-25
FI46968B (xx) 1973-05-02
GB1126353A (en) 1968-09-05
DE1620295A1 (de) 1970-02-19
BR6680263D0 (pt) 1973-03-01
SE312863B (xx) 1969-07-28
NL6607936A (xx) 1966-12-12
FI46968C (fi) 1973-08-10
ES337005A1 (es) 1968-01-16
GB1084598A (en) 1967-09-27
GB1126352A (en) 1968-09-05
BR6572394D0 (pt) 1973-08-14
SE322227B (xx) 1970-04-06
FR5364M (xx) 1967-09-11
NL6510287A (xx) 1966-02-08
NL6611133A (xx) 1967-02-10
CH460033A (de) 1968-07-31
SE350500B (xx) 1972-10-30
CA953297A (en) 1974-08-20
SE345040B (xx) 1972-05-08
MY7100223A (en) 1971-12-31
CY613A (en) 1971-10-01
GB1126354A (en) 1968-09-05
DE1620295C3 (de) 1975-05-22
GB1120488A (en) 1968-07-17
DE1564537A1 (de) 1970-07-30
CH466298A (de) 1968-12-15
IL24214A (en) 1969-06-25
BR6572393D0 (pt) 1973-08-14
MC542A1 (fr) 1966-04-06
BE668687A (xx) 1966-02-23
BG17566A3 (xx) 1973-11-10
DE1620295B2 (de) 1974-10-03
DE1620294A1 (de) 1970-02-05
CH460007A (de) 1968-07-31
NL129867C (xx) 1900-01-01
GB1133376A (en) 1968-11-13
DE1514363B1 (de) 1970-06-18
SE351641B (xx) 1972-12-04
CH460008A (de) 1968-07-31
CH460031A (de) 1968-07-31

Similar Documents

Publication Publication Date Title
JP2716146B2 (ja) 縮合インドール誘導体およびその製造方法
US3393192A (en) Novel benzazepines
FI67374C (fi) Foerfarande foer framstaellning av terapeutiskt aktiva 1-fenyl-2,3,4,5-tetrahydro-1h-3-bensazepinfoereningar
CA2075057A1 (en) Therapeutically useful heterocyclic indole compounds
US3132147A (en)
WO1997047601A1 (fr) Composes heterocycliques fusionnes et leurs utilisations medicinales
DK157755B (da) Fremgangsmaade til fremstilling af beta-carbolinderivater
JPH0570423A (ja) アミド誘導体
JP2014515379A (ja) ヘキサヒドロジベンゾ[a,g]キノリジン系化合物、その製造方法、医薬品組成物およびその応用
JPH06510056A (ja) 新規なイサチンオキシム誘導体類、その製造および使用
NO120580B (xx)
HU201020B (en) Process for producine new naphthalene derivatives and pharmaceutical compositions comprising same
US5010074A (en) Novel benzazepine derivatives
JPH03204856A (ja) イサチン誘導体、その製造方法及びその使用方法
US3859304A (en) 6-halo-1-aminomethyl-1,2,3,4-tetrahydrocarbazoles
US4044136A (en) Aminoquinazoline therapeutic agents
MXPA02006699A (es) Nuevos compuestos de octahidro-2h-pirod[1,2-a]pirazina, un proceso para su preparacion y composiciones farmaceuticas que los contienen.
JPH04230685A (ja) インドロナフチリジン類
US3891644A (en) 10,10-Disubstituted-2,3,4,10-tetrahydro-and 1,2,3,4,10a-hexahydropyrimidol {8 1,2-a{9 indole derivatives
US3420818A (en) Tetrahydroisoquinolines
KR910002564B1 (ko) 헥사하이드로피롤로[2,1-a]이소퀴놀린 유도체의 제조방법
CA1133483A (en) Hexahydro-trans-pyridoindole neuroleptic agents
KR20040107410A (ko) 벤조티아진 및 벤조티아디아진 화합물, 이들의 제조방법및 이들을 함유하는 약제 조성물
US4399145A (en) Lactams Compositions and pharmaceutical methods of use
HU193305B (en) Process for production of new indolin-derivatives