NL8902292A - Werkwijze voor het vervaardigen van een een mesa bevattende halfgeleiderinrichting. - Google Patents

Werkwijze voor het vervaardigen van een een mesa bevattende halfgeleiderinrichting. Download PDF

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Publication number
NL8902292A
NL8902292A NL8902292A NL8902292A NL8902292A NL 8902292 A NL8902292 A NL 8902292A NL 8902292 A NL8902292 A NL 8902292A NL 8902292 A NL8902292 A NL 8902292A NL 8902292 A NL8902292 A NL 8902292A
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Netherlands
Prior art keywords
semiconductor
semiconductor layer
layer
mesa
etching
Prior art date
Application number
NL8902292A
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English (en)
Dutch (nl)
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Philips Nv
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Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8902292A priority Critical patent/NL8902292A/nl
Priority to US07/576,317 priority patent/US5266518A/en
Priority to EP90202404A priority patent/EP0418953B1/de
Priority to DE69017332T priority patent/DE69017332T2/de
Priority to KR1019900014599A priority patent/KR0174537B1/ko
Priority to JP2242278A priority patent/JP2958084B2/ja
Publication of NL8902292A publication Critical patent/NL8902292A/nl

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
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    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S438/911—Differential oxidation and etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
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  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
NL8902292A 1989-09-14 1989-09-14 Werkwijze voor het vervaardigen van een een mesa bevattende halfgeleiderinrichting. NL8902292A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL8902292A NL8902292A (nl) 1989-09-14 1989-09-14 Werkwijze voor het vervaardigen van een een mesa bevattende halfgeleiderinrichting.
US07/576,317 US5266518A (en) 1989-09-14 1990-08-29 Method of manufacturing a semiconductor body comprising a mesa
EP90202404A EP0418953B1 (de) 1989-09-14 1990-09-10 Verfahren zum Herstellen einer eine Mesa enthaltenden Halbleiteranordnung
DE69017332T DE69017332T2 (de) 1989-09-14 1990-09-10 Verfahren zum Herstellen einer eine Mesa enthaltenden Halbleiteranordnung.
KR1019900014599A KR0174537B1 (ko) 1989-09-14 1990-09-11 메사로 이루어진 반도체 보디의 제조방법
JP2242278A JP2958084B2 (ja) 1989-09-14 1990-09-12 メサ型半導体基体の製造方法

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NL8902292 1989-09-14
NL8902292A NL8902292A (nl) 1989-09-14 1989-09-14 Werkwijze voor het vervaardigen van een een mesa bevattende halfgeleiderinrichting.

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KR0174537B1 (ko) 1999-02-01
KR910007153A (ko) 1991-04-30
DE69017332T2 (de) 1995-09-14
US5266518A (en) 1993-11-30
EP0418953A1 (de) 1991-03-27
DE69017332D1 (de) 1995-04-06
EP0418953B1 (de) 1995-03-01
JPH03106026A (ja) 1991-05-02
JP2958084B2 (ja) 1999-10-06

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