NL8901874A - Planaire josephson inrichting. - Google Patents
Planaire josephson inrichting. Download PDFInfo
- Publication number
- NL8901874A NL8901874A NL8901874A NL8901874A NL8901874A NL 8901874 A NL8901874 A NL 8901874A NL 8901874 A NL8901874 A NL 8901874A NL 8901874 A NL8901874 A NL 8901874A NL 8901874 A NL8901874 A NL 8901874A
- Authority
- NL
- Netherlands
- Prior art keywords
- silver
- superconducting
- layer
- layers
- josephson device
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 229910000367 silver sulfate Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical group [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- JKNZUZCGFROMAZ-UHFFFAOYSA-L [Ag+2].[O-]S([O-])(=O)=O Chemical group [Ag+2].[O-]S([O-])(=O)=O JKNZUZCGFROMAZ-UHFFFAOYSA-L 0.000 claims description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910002319 LaF3 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- -1 rare earth metal ions Chemical class 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
- H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/089—Josephson devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/775—High tc, above 30 k, superconducting material
- Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
- Y10S505/779—Other rare earth, i.e. Sc,Y,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and alkaline earth, i.e. Ca,Sr,Ba,Ra
- Y10S505/78—Yttrium and barium-, e.g. YBa2Cu307
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8901874A NL8901874A (nl) | 1989-07-20 | 1989-07-20 | Planaire josephson inrichting. |
| US07/549,341 US5015623A (en) | 1989-07-20 | 1990-07-06 | Planar Josephson device with a silver salt interlayer |
| EP90201922A EP0409338B1 (de) | 1989-07-20 | 1990-07-16 | Planarer Josephson-Übergang |
| DE69016294T DE69016294T2 (de) | 1989-07-20 | 1990-07-16 | Planarer Josephson-Übergang. |
| JP2187360A JPH0358488A (ja) | 1989-07-20 | 1990-07-17 | プレーナ型ジョセフソン素子及びその製造方法 |
| CN90104605A CN1048950A (zh) | 1989-07-20 | 1990-07-17 | 平面型约瑟夫逊器件 |
| KR1019900010935A KR910003849A (ko) | 1989-07-20 | 1990-07-19 | 평면 조셉슨 장치 및 이것의 제조방법 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8901874 | 1989-07-20 | ||
| NL8901874A NL8901874A (nl) | 1989-07-20 | 1989-07-20 | Planaire josephson inrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8901874A true NL8901874A (nl) | 1991-02-18 |
Family
ID=19855071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8901874A NL8901874A (nl) | 1989-07-20 | 1989-07-20 | Planaire josephson inrichting. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5015623A (de) |
| EP (1) | EP0409338B1 (de) |
| JP (1) | JPH0358488A (de) |
| KR (1) | KR910003849A (de) |
| CN (1) | CN1048950A (de) |
| DE (1) | DE69016294T2 (de) |
| NL (1) | NL8901874A (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0468868B1 (de) * | 1990-07-19 | 1996-02-28 | Sumitomo Electric Industries, Ltd. | Supraleitende Einrichtung mit geschichteter Struktur, zusammengesetzt aus oxidischem Supraleiter und Isolatordünnschicht und deren Herstellungsmethode |
| DE59106363D1 (de) * | 1990-10-26 | 1995-10-05 | Siemens Ag | Verfahren zur Herstellung einer supraleitenden Schicht aus YBa2Cu3O7 auf einem Substrat aus Saphir. |
| JPH04214097A (ja) * | 1990-12-13 | 1992-08-05 | Sumitomo Electric Ind Ltd | 超電導薄膜の作製方法 |
| EP0511450B1 (de) * | 1991-05-01 | 1997-07-30 | International Business Machines Corporation | Supraleitende Schaltkreis-Bauelemente mit metallischem Substrat und deren Herstellungsverfahren |
| WO1993001621A1 (en) * | 1991-07-03 | 1993-01-21 | Cookson Group Plc | Alkaline earth metal sulphate uses |
| US7330744B2 (en) * | 2001-11-14 | 2008-02-12 | Nexans | Metal salt resistive layer on an superconducting element |
| US6884527B2 (en) * | 2003-07-21 | 2005-04-26 | The Regents Of The University Of California | Biaxially textured composite substrates |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63234533A (ja) * | 1987-03-24 | 1988-09-29 | Agency Of Ind Science & Technol | ジヨセフソン接合素子の形成方法 |
| CA1329952C (en) * | 1987-04-27 | 1994-05-31 | Yoshihiko Imanaka | Multi-layer superconducting circuit substrate and process for manufacturing same |
| JPS6431475A (en) * | 1987-07-28 | 1989-02-01 | Univ Tokyo | Superconducting device and forming method thereof |
| US4811380A (en) * | 1988-01-29 | 1989-03-07 | Motorola, Inc. | Cellular radiotelephone system with dropped call protection |
| DE3805010A1 (de) * | 1988-02-18 | 1989-08-24 | Kernforschungsanlage Juelich | Verfahren zur herstellung duenner schichten aus oxydischem hochtemperatur-supraleiter |
| JP2644284B2 (ja) * | 1988-05-30 | 1997-08-25 | 株式会社東芝 | 超電導素子 |
| JPH074073B2 (ja) * | 1988-07-04 | 1995-01-18 | 松下電器産業株式会社 | 超音波モータ |
-
1989
- 1989-07-20 NL NL8901874A patent/NL8901874A/nl not_active Application Discontinuation
-
1990
- 1990-07-06 US US07/549,341 patent/US5015623A/en not_active Expired - Fee Related
- 1990-07-16 EP EP90201922A patent/EP0409338B1/de not_active Expired - Lifetime
- 1990-07-16 DE DE69016294T patent/DE69016294T2/de not_active Expired - Fee Related
- 1990-07-17 JP JP2187360A patent/JPH0358488A/ja active Pending
- 1990-07-17 CN CN90104605A patent/CN1048950A/zh active Pending
- 1990-07-19 KR KR1019900010935A patent/KR910003849A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0409338A3 (en) | 1991-06-05 |
| DE69016294D1 (de) | 1995-03-09 |
| DE69016294T2 (de) | 1995-08-24 |
| CN1048950A (zh) | 1991-01-30 |
| EP0409338A2 (de) | 1991-01-23 |
| EP0409338B1 (de) | 1995-01-25 |
| US5015623A (en) | 1991-05-14 |
| JPH0358488A (ja) | 1991-03-13 |
| KR910003849A (ko) | 1991-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |