NL8602176A - Ionen bundel apparaat voor nabewerking van patronen. - Google Patents

Ionen bundel apparaat voor nabewerking van patronen. Download PDF

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Publication number
NL8602176A
NL8602176A NL8602176A NL8602176A NL8602176A NL 8602176 A NL8602176 A NL 8602176A NL 8602176 A NL8602176 A NL 8602176A NL 8602176 A NL8602176 A NL 8602176A NL 8602176 A NL8602176 A NL 8602176A
Authority
NL
Netherlands
Prior art keywords
ion beam
ion
source
deposition
material deposition
Prior art date
Application number
NL8602176A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8602176A priority Critical patent/NL8602176A/nl
Priority to EP87201469A priority patent/EP0257685B1/fr
Priority to DE8787201469T priority patent/DE3767249D1/de
Priority to US07/085,991 priority patent/US4820898A/en
Priority to KR1019870009220A priority patent/KR950001721B1/ko
Priority to JP62209400A priority patent/JPS6373252A/ja
Publication of NL8602176A publication Critical patent/NL8602176A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
NL8602176A 1986-08-27 1986-08-27 Ionen bundel apparaat voor nabewerking van patronen. NL8602176A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL8602176A NL8602176A (nl) 1986-08-27 1986-08-27 Ionen bundel apparaat voor nabewerking van patronen.
EP87201469A EP0257685B1 (fr) 1986-08-27 1987-08-03 Méthode pour la modification de motifs prévus sur la surface d une cible et appareil pour son opération
DE8787201469T DE3767249D1 (de) 1986-08-27 1987-08-03 Verfahren zum aendern von auf des oberflaeche eines traegers aufgebrachten mustern und vorrichtung zur seiner durchfuehrung.
US07/085,991 US4820898A (en) 1986-08-27 1987-08-14 Ion beam apparatus for finishing patterns
KR1019870009220A KR950001721B1 (ko) 1986-08-27 1987-08-24 패턴 완성 장치
JP62209400A JPS6373252A (ja) 1986-08-27 1987-08-25 パタ−ン仕上げ装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8602176A NL8602176A (nl) 1986-08-27 1986-08-27 Ionen bundel apparaat voor nabewerking van patronen.
NL8602176 1986-08-27

Publications (1)

Publication Number Publication Date
NL8602176A true NL8602176A (nl) 1988-03-16

Family

ID=19848462

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8602176A NL8602176A (nl) 1986-08-27 1986-08-27 Ionen bundel apparaat voor nabewerking van patronen.

Country Status (6)

Country Link
US (1) US4820898A (fr)
EP (1) EP0257685B1 (fr)
JP (1) JPS6373252A (fr)
KR (1) KR950001721B1 (fr)
DE (1) DE3767249D1 (fr)
NL (1) NL8602176A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
EP0417354A1 (fr) * 1989-09-15 1991-03-20 Koninklijke Philips Electronics N.V. Appareil à faisceau d'électrons avec compensation des charges accumulées
GB2247345B (en) * 1990-07-05 1995-04-05 Haroon Ahmed Integrated circuit structure analysis
GB2258083A (en) * 1991-07-25 1993-01-27 Kratos Analytical Ltd Sample analysis apparatus and method.
US5506080A (en) * 1995-01-23 1996-04-09 Internation Business Machines Corp. Lithographic mask repair and fabrication method
US5981110A (en) * 1998-02-17 1999-11-09 International Business Machines Corporation Method for repairing photomasks
DE60138002D1 (de) 2000-01-21 2009-04-30 Fei Co Fokussierte ionenstrahlen mit vorgegebener form und geringer dichte
US6727500B1 (en) * 2000-02-25 2004-04-27 Fei Company System for imaging a cross-section of a substrate
US6977386B2 (en) * 2001-01-19 2005-12-20 Fei Company Angular aperture shaped beam system and method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1384281A (en) * 1972-03-16 1975-02-19 Secretary Trade Ind Brit Formation of photographic records
US4426582A (en) * 1980-01-21 1984-01-17 Oregon Graduate Center Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system
US4367429A (en) * 1980-11-03 1983-01-04 Hughes Aircraft Company Alloys for liquid metal ion sources
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
JPS58178944A (ja) * 1982-04-14 1983-10-20 Hitachi Ltd イオン源
JPS6094728A (ja) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd 荷電粒子ビームを用いた加工方法およびその装置
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration
US4629931A (en) * 1984-11-20 1986-12-16 Hughes Aircraft Company Liquid metal ion source
JPS61123843A (ja) * 1984-11-20 1986-06-11 Seiko Instr & Electronics Ltd 集束イオンビ−ムを用いたマスク修正装置
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing

Also Published As

Publication number Publication date
JPS6373252A (ja) 1988-04-02
EP0257685A1 (fr) 1988-03-02
US4820898A (en) 1989-04-11
DE3767249D1 (de) 1991-02-14
KR880003406A (ko) 1988-05-17
EP0257685B1 (fr) 1991-01-09
KR950001721B1 (ko) 1995-02-28

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Legal Events

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A1B A search report has been drawn up
BV The patent application has lapsed