DE60138002D1 - Fokussierte ionenstrahlen mit vorgegebener form und geringer dichte - Google Patents
Fokussierte ionenstrahlen mit vorgegebener form und geringer dichteInfo
- Publication number
- DE60138002D1 DE60138002D1 DE60138002T DE60138002T DE60138002D1 DE 60138002 D1 DE60138002 D1 DE 60138002D1 DE 60138002 T DE60138002 T DE 60138002T DE 60138002 T DE60138002 T DE 60138002T DE 60138002 D1 DE60138002 D1 DE 60138002D1
- Authority
- DE
- Germany
- Prior art keywords
- low density
- specific form
- focused ion
- ion rays
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17751800P | 2000-01-21 | 2000-01-21 | |
PCT/EP2001/000621 WO2001054163A1 (en) | 2000-01-21 | 2001-01-19 | Shaped and low density focused ion beams |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60138002D1 true DE60138002D1 (de) | 2009-04-30 |
Family
ID=22648901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60138002T Expired - Lifetime DE60138002D1 (de) | 2000-01-21 | 2001-01-19 | Fokussierte ionenstrahlen mit vorgegebener form und geringer dichte |
Country Status (5)
Country | Link |
---|---|
US (1) | US6949756B2 (de) |
EP (1) | EP1210723B1 (de) |
JP (1) | JP5259035B2 (de) |
DE (1) | DE60138002D1 (de) |
WO (1) | WO2001054163A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2806527B1 (fr) | 2000-03-20 | 2002-10-25 | Schlumberger Technologies Inc | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
EP1160826A3 (de) * | 2000-05-30 | 2006-12-13 | Ebara Corporation | Beschichten, Verändern und Ätzen eines Substrats mittels Teilchenbestrahlung |
US20060051508A1 (en) * | 2000-12-28 | 2006-03-09 | Ilan Gavish | Focused ion beam deposition |
US6492261B2 (en) * | 2000-12-30 | 2002-12-10 | Intel Corporation | Focused ion beam metal deposition |
US6638580B2 (en) * | 2000-12-29 | 2003-10-28 | Intel Corporation | Apparatus and a method for forming an alloy layer over a substrate using an ion beam |
US6977386B2 (en) * | 2001-01-19 | 2005-12-20 | Fei Company | Angular aperture shaped beam system and method |
US7160475B2 (en) * | 2002-11-21 | 2007-01-09 | Fei Company | Fabrication of three dimensional structures |
US6926935B2 (en) * | 2003-06-27 | 2005-08-09 | Fei Company | Proximity deposition |
JP4344197B2 (ja) * | 2003-08-26 | 2009-10-14 | パナソニック株式会社 | 絶縁膜測定装置、絶縁膜測定方法及び絶縁膜評価装置 |
FR2859488B1 (fr) * | 2003-09-10 | 2006-02-17 | Centre Nat Rech Scient | Procede de fabrication d'au moins une cavite dans un materiau |
EP1683163B1 (de) | 2003-10-17 | 2012-02-22 | Fei Company | Extraktionseinrichtung und verfahren für geladene teilchen |
JP2006079846A (ja) * | 2004-09-07 | 2006-03-23 | Canon Inc | 試料の断面評価装置及び試料の断面評価方法 |
JP5509239B2 (ja) * | 2004-09-29 | 2014-06-04 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置及び加工方法 |
JP5033314B2 (ja) * | 2004-09-29 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置及び加工方法 |
US8414908B2 (en) * | 2005-04-28 | 2013-04-09 | The Regents Of The University Of California | Compositions comprising nanostructures for cell, tissue and artificial organ growth, and methods for making and using same |
JP5600371B2 (ja) * | 2006-02-15 | 2014-10-01 | エフ・イ−・アイ・カンパニー | 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング |
EP2063450A1 (de) * | 2007-11-21 | 2009-05-27 | FEI Company | Verfahren zum Erhalten eines Rastertransmissionsbildes einer Probe in einer teilchenoptischen Vorrichtung |
US20110085968A1 (en) * | 2009-10-13 | 2011-04-14 | The Regents Of The University Of California | Articles comprising nano-materials for geometry-guided stem cell differentiation and enhanced bone growth |
WO2011163397A1 (en) | 2010-06-22 | 2011-12-29 | The Regents Of The University Of California | Microfabricated high-bandpass foucault aperture for electron microscopy |
JP6403200B2 (ja) | 2014-12-03 | 2018-10-10 | 日本電子株式会社 | 成膜方法および集束イオンビーム装置 |
JP2017020106A (ja) * | 2015-07-02 | 2017-01-26 | エフ・イ−・アイ・カンパニー | 高スループット・パターン形成のための適応ビーム電流 |
US9679742B2 (en) | 2015-10-30 | 2017-06-13 | Fei Company | Method for optimizing charged particle beams formed by shaped apertures |
US10971618B2 (en) | 2019-08-02 | 2021-04-06 | Applied Materials Israel Ltd. | Generating milled structural elements with a flat upper surface |
CN117293005A (zh) | 2022-06-23 | 2023-12-26 | Fei 公司 | 聚焦离子束系统和方法 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE33193E (en) * | 1981-09-30 | 1990-04-03 | Hitachi, Ltd. | Ion beam processing apparatus and method of correcting mask defects |
JPS59168652A (ja) * | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 素子修正方法及びその装置 |
JPS6169125A (ja) | 1984-08-06 | 1986-04-09 | Nippon Telegr & Teleph Corp <Ntt> | 荷電ビ−ム露光装置 |
US4698236A (en) * | 1984-10-26 | 1987-10-06 | Ion Beam Systems, Inc. | Augmented carbonaceous substrate alteration |
US4634871A (en) | 1985-01-14 | 1987-01-06 | Hughes Aircraft Company | Method and apparatus for spot shaping and blanking a focused beam |
US4661709A (en) | 1985-06-28 | 1987-04-28 | Control Data Corporation | Modular all-electrostatic electron-optical column and assembly of said columns into an array and method of manufacture |
US4694178A (en) | 1985-06-28 | 1987-09-15 | Control Data Corporation | Multiple channel electron beam optical column lithography system and method of operation |
US4687940A (en) * | 1986-03-20 | 1987-08-18 | Hughes Aircraft Company | Hybrid focused-flood ion beam system and method |
JPS62281349A (ja) | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
NL8602176A (nl) | 1986-08-27 | 1988-03-16 | Philips Nv | Ionen bundel apparaat voor nabewerking van patronen. |
US4724359A (en) * | 1986-10-17 | 1988-02-09 | General Electric Company | Laminar flow guns for light valves |
AT391771B (de) * | 1987-03-05 | 1990-11-26 | Ims Ionen Mikrofab Syst | Einrichtung zur verkleinernden oder 1 : 1 ionenprojektionslithographie |
US4874460A (en) * | 1987-11-16 | 1989-10-17 | Seiko Instruments Inc. | Method and apparatus for modifying patterned film |
US6048588A (en) * | 1988-07-08 | 2000-04-11 | Cauldron Limited Partnership | Method for enhancing chemisorption of material |
DE68920281T2 (de) | 1988-10-31 | 1995-05-11 | Fujitsu Ltd | Vorrichtung und Verfahren zur Lithographie mittels eines Strahls geladener Teilchen. |
DE3910054A1 (de) * | 1989-03-28 | 1990-10-11 | Siemens Ag | Ionenimplantationsanlage |
JP2708547B2 (ja) * | 1989-05-10 | 1998-02-04 | 株式会社日立製作所 | デバイス移植方法 |
US5093572A (en) | 1989-11-02 | 1992-03-03 | Mitsubishi Denki Kabushiki Kaisha | Scanning electron microscope for observation of cross section and method of observing cross section employing the same |
NL9000822A (nl) * | 1990-04-09 | 1991-11-01 | Philips Nv | Werkwijze voor bestraling van een object met een geladen deeltjesbundel en inrichting voor uitvoering van de werkwijze. |
US5126287A (en) * | 1990-06-07 | 1992-06-30 | Mcnc | Self-aligned electron emitter fabrication method and devices formed thereby |
US5061850A (en) * | 1990-07-30 | 1991-10-29 | Wisconsin Alumni Research Foundation | High-repetition rate position sensitive atom probe |
US5149974A (en) | 1990-10-29 | 1992-09-22 | International Business Machines Corporation | Gas delivery for ion beam deposition and etching |
US5188705A (en) | 1991-04-15 | 1993-02-23 | Fei Company | Method of semiconductor device manufacture |
WO1994013010A1 (en) | 1991-04-15 | 1994-06-09 | Fei Company | Process of shaping features of semiconductor devices |
US5389196A (en) * | 1992-01-30 | 1995-02-14 | Massachusetts Institute Of Technology | Methods for fabricating three-dimensional micro structures |
JP3117836B2 (ja) | 1993-03-02 | 2000-12-18 | セイコーインスツルメンツ株式会社 | 集束イオンビーム装置 |
US5504340A (en) * | 1993-03-10 | 1996-04-02 | Hitachi, Ltd. | Process method and apparatus using focused ion beam generating means |
EP0637057B1 (de) * | 1993-07-30 | 1996-12-11 | International Business Machines Corporation | Vorrichtung und Verfahren um feine Metal-linie auf einem Substrat abzulegen |
US5435850A (en) | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
US5524018A (en) * | 1993-10-04 | 1996-06-04 | Adachi; Yoshi | Superior resolution laser using bessel transform optical filter |
US5528048A (en) * | 1994-03-15 | 1996-06-18 | Fujitsu Limited | Charged particle beam exposure system and method |
AU2914095A (en) | 1994-06-28 | 1996-01-25 | Fei Company | Charged particle deposition of electrically insulating films |
JP3265901B2 (ja) * | 1995-03-24 | 2002-03-18 | 株式会社日立製作所 | 集束イオンビーム装置及び集束イオンビーム照射方法 |
JPH09199072A (ja) * | 1996-01-22 | 1997-07-31 | Hitachi Ltd | イオンビーム投射方法および装置 |
JPH09283496A (ja) * | 1996-04-18 | 1997-10-31 | Hitachi Ltd | 荷電粒子ビーム照射によるパターン形成方法及びその装置 |
US5916424A (en) * | 1996-04-19 | 1999-06-29 | Micrion Corporation | Thin film magnetic recording heads and systems and methods for manufacturing the same |
US6128134A (en) * | 1997-08-27 | 2000-10-03 | Digital Optics Corporation | Integrated beam shaper and use thereof |
JPH10144583A (ja) * | 1996-11-07 | 1998-05-29 | Nikon Corp | 荷電粒子線投影方法および荷電粒子線投影装置 |
JPH10162769A (ja) * | 1996-11-28 | 1998-06-19 | Hitachi Ltd | イオンビーム加工装置 |
US6042738A (en) * | 1997-04-16 | 2000-03-28 | Micrion Corporation | Pattern film repair using a focused particle beam system |
US6274877B1 (en) * | 1997-05-08 | 2001-08-14 | Canon Kabushiki Kaisha | Electron beam exposure apparatus |
US6538254B1 (en) | 1997-07-22 | 2003-03-25 | Hitachi, Ltd. | Method and apparatus for sample fabrication |
JPH1177333A (ja) * | 1997-09-09 | 1999-03-23 | Hitachi Ltd | 集束イオンビーム加工装置及びその方法 |
US6583426B1 (en) * | 1997-09-10 | 2003-06-24 | Hitachi, Ltd. | Projection ion beam machining apparatus |
JPH11154479A (ja) * | 1997-11-20 | 1999-06-08 | Hitachi Ltd | 2次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置 |
JP2926132B1 (ja) * | 1998-01-23 | 1999-07-28 | セイコーインスツルメンツ株式会社 | 集束イオンビームによる二次イオン像観察方法 |
US5945677A (en) | 1998-04-10 | 1999-08-31 | The Regents Of The University Of California | Focused ion beam system |
US6011269A (en) | 1998-04-10 | 2000-01-04 | Etec Systems, Inc. | Shaped shadow projection for an electron beam column |
US6277542B1 (en) * | 1998-06-05 | 2001-08-21 | Nikon Corporation | Charged-particle-beam projection-exposure methods exhibiting more uniform beam-current density |
US6455863B1 (en) * | 1999-06-09 | 2002-09-24 | Applied Materials, Inc. | Apparatus and method for forming a charged particle beam of arbitrary shape |
US6414307B1 (en) * | 1999-07-09 | 2002-07-02 | Fei Company | Method and apparatus for enhancing yield of secondary ions |
-
2001
- 2001-01-19 DE DE60138002T patent/DE60138002D1/de not_active Expired - Lifetime
- 2001-01-19 WO PCT/EP2001/000621 patent/WO2001054163A1/en active Application Filing
- 2001-01-19 US US09/765,806 patent/US6949756B2/en not_active Expired - Lifetime
- 2001-01-19 JP JP2001553556A patent/JP5259035B2/ja not_active Expired - Fee Related
- 2001-01-19 EP EP01903662A patent/EP1210723B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP5259035B2 (ja) | 2013-08-07 |
JP2003520409A (ja) | 2003-07-02 |
US6949756B2 (en) | 2005-09-27 |
WO2001054163A9 (en) | 2002-10-17 |
EP1210723A1 (de) | 2002-06-05 |
WO2001054163A1 (en) | 2001-07-26 |
EP1210723B1 (de) | 2009-03-18 |
US20010045525A1 (en) | 2001-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |