DE3767249D1 - Verfahren zum aendern von auf des oberflaeche eines traegers aufgebrachten mustern und vorrichtung zur seiner durchfuehrung. - Google Patents

Verfahren zum aendern von auf des oberflaeche eines traegers aufgebrachten mustern und vorrichtung zur seiner durchfuehrung.

Info

Publication number
DE3767249D1
DE3767249D1 DE8787201469T DE3767249T DE3767249D1 DE 3767249 D1 DE3767249 D1 DE 3767249D1 DE 8787201469 T DE8787201469 T DE 8787201469T DE 3767249 T DE3767249 T DE 3767249T DE 3767249 D1 DE3767249 D1 DE 3767249D1
Authority
DE
Germany
Prior art keywords
implementing
carrier
changing patterns
patterns applied
changing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787201469T
Other languages
English (en)
Inventor
Hendrik Nicolaas Slingerland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3767249D1 publication Critical patent/DE3767249D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8787201469T 1986-08-27 1987-08-03 Verfahren zum aendern von auf des oberflaeche eines traegers aufgebrachten mustern und vorrichtung zur seiner durchfuehrung. Expired - Lifetime DE3767249D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8602176A NL8602176A (nl) 1986-08-27 1986-08-27 Ionen bundel apparaat voor nabewerking van patronen.

Publications (1)

Publication Number Publication Date
DE3767249D1 true DE3767249D1 (de) 1991-02-14

Family

ID=19848462

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787201469T Expired - Lifetime DE3767249D1 (de) 1986-08-27 1987-08-03 Verfahren zum aendern von auf des oberflaeche eines traegers aufgebrachten mustern und vorrichtung zur seiner durchfuehrung.

Country Status (6)

Country Link
US (1) US4820898A (de)
EP (1) EP0257685B1 (de)
JP (1) JPS6373252A (de)
KR (1) KR950001721B1 (de)
DE (1) DE3767249D1 (de)
NL (1) NL8602176A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
EP0417354A1 (de) * 1989-09-15 1991-03-20 Koninklijke Philips Electronics N.V. Elektronenstrahlgerät mit Ausfladungskompensierung
GB2282480B (en) * 1990-07-05 1995-07-26 Olivetti Systems & Networks S Integrated circuit structure analysis
GB2258083A (en) * 1991-07-25 1993-01-27 Kratos Analytical Ltd Sample analysis apparatus and method.
US5506080A (en) * 1995-01-23 1996-04-09 Internation Business Machines Corp. Lithographic mask repair and fabrication method
US5981110A (en) * 1998-02-17 1999-11-09 International Business Machines Corporation Method for repairing photomasks
US6949756B2 (en) 2000-01-21 2005-09-27 Fei Company Shaped and low density focused ion beams
US6727500B1 (en) 2000-02-25 2004-04-27 Fei Company System for imaging a cross-section of a substrate
US6977386B2 (en) * 2001-01-19 2005-12-20 Fei Company Angular aperture shaped beam system and method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1384281A (en) * 1972-03-16 1975-02-19 Secretary Trade Ind Brit Formation of photographic records
US4426582A (en) * 1980-01-21 1984-01-17 Oregon Graduate Center Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system
US4367429A (en) * 1980-11-03 1983-01-04 Hughes Aircraft Company Alloys for liquid metal ion sources
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
JPS58178944A (ja) * 1982-04-14 1983-10-20 Hitachi Ltd イオン源
JPS6094728A (ja) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd 荷電粒子ビームを用いた加工方法およびその装置
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration
US4629931A (en) * 1984-11-20 1986-12-16 Hughes Aircraft Company Liquid metal ion source
JPS61123843A (ja) * 1984-11-20 1986-06-11 Seiko Instr & Electronics Ltd 集束イオンビ−ムを用いたマスク修正装置
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing

Also Published As

Publication number Publication date
EP0257685B1 (de) 1991-01-09
EP0257685A1 (de) 1988-03-02
US4820898A (en) 1989-04-11
KR880003406A (ko) 1988-05-17
NL8602176A (nl) 1988-03-16
KR950001721B1 (ko) 1995-02-28
JPS6373252A (ja) 1988-04-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee