NL8503532A - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL8503532A NL8503532A NL8503532A NL8503532A NL8503532A NL 8503532 A NL8503532 A NL 8503532A NL 8503532 A NL8503532 A NL 8503532A NL 8503532 A NL8503532 A NL 8503532A NL 8503532 A NL8503532 A NL 8503532A
- Authority
- NL
- Netherlands
- Prior art keywords
- region
- semiconductor
- layer
- type
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 58
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 21
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000005215 recombination Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 229910017401 Au—Ge Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 101100042630 Caenorhabditis elegans sin-3 gene Proteins 0.000 description 1
- 241000153282 Theope Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59277893A JPS61150372A (ja) | 1984-12-25 | 1984-12-25 | 半導体装置 |
| JP27789384 | 1984-12-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8503532A true NL8503532A (nl) | 1986-07-16 |
Family
ID=17589752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8503532A NL8503532A (nl) | 1984-12-25 | 1985-12-20 | Halfgeleiderinrichting. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4772932A (ja) |
| JP (1) | JPS61150372A (ja) |
| KR (1) | KR940006690B1 (ja) |
| CA (1) | CA1237538A (ja) |
| DE (1) | DE3545435A1 (ja) |
| FR (1) | FR2582151B1 (ja) |
| GB (1) | GB2168848B (ja) |
| NL (1) | NL8503532A (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3639433A1 (de) * | 1986-11-18 | 1988-05-26 | Licentia Gmbh | Halbleiteranordnung |
| US5063427A (en) * | 1987-10-13 | 1991-11-05 | Northrop Corporation | Planar bipolar transistors including heterojunction transistors |
| EP0366861A1 (en) * | 1988-10-20 | 1990-05-09 | International Business Machines Corporation | Semiconductor ballistic transistor |
| DE4101167A1 (de) * | 1991-01-17 | 1992-07-23 | Daimler Benz Ag | Anordnung und verfahren zur herstellung komplementaerer feldeffekttransistoren |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178374A (en) * | 1981-04-27 | 1982-11-02 | Sumitomo Electric Ind Ltd | Junction type field-efect transistor and its manufacture |
| JPS5893380A (ja) * | 1981-11-30 | 1983-06-03 | Fujitsu Ltd | 半導体装置 |
| JPS59210672A (ja) * | 1983-05-16 | 1984-11-29 | Hitachi Ltd | 半導体装置 |
| JP2604349B2 (ja) * | 1984-12-12 | 1997-04-30 | 日本電気株式会社 | 半導体装置 |
-
1984
- 1984-12-25 JP JP59277893A patent/JPS61150372A/ja active Pending
-
1985
- 1985-12-14 KR KR1019850009406A patent/KR940006690B1/ko not_active IP Right Cessation
- 1985-12-20 NL NL8503532A patent/NL8503532A/nl not_active Application Discontinuation
- 1985-12-20 GB GB08531442A patent/GB2168848B/en not_active Expired
- 1985-12-20 DE DE19853545435 patent/DE3545435A1/de not_active Ceased
- 1985-12-23 US US06/812,377 patent/US4772932A/en not_active Expired - Fee Related
- 1985-12-24 CA CA000498553A patent/CA1237538A/en not_active Expired
- 1985-12-24 FR FR858519138A patent/FR2582151B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3545435A1 (de) | 1986-06-26 |
| GB8531442D0 (en) | 1986-02-05 |
| GB2168848A (en) | 1986-06-25 |
| KR940006690B1 (ko) | 1994-07-25 |
| GB2168848B (en) | 1988-04-20 |
| KR860005449A (ko) | 1986-07-23 |
| CA1237538A (en) | 1988-05-31 |
| US4772932A (en) | 1988-09-20 |
| JPS61150372A (ja) | 1986-07-09 |
| FR2582151A1 (fr) | 1986-11-21 |
| FR2582151B1 (fr) | 1989-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tiwari et al. | Transport and related properties of (Ga, Al) As/GaAs double heterostructure bipolar junction transistors | |
| Marty et al. | Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistor | |
| Campbell | Phototransistors for lightwave communications | |
| Taylor et al. | The bipolar inversion channel field-effect transistor (BICFET)—A new field-effect solid-state device: Theory and structures | |
| KR890004959B1 (ko) | 전계효과 반도체 장치 | |
| EP0642171B1 (en) | Lateral bipolar transistor | |
| JPS5943097B2 (ja) | 半導体デバイス | |
| JPS63140570A (ja) | 半導体装置 | |
| US5404028A (en) | Electrical junction device with lightly doped buffer region to precisely locate a p-n junction | |
| NL8503532A (nl) | Halfgeleiderinrichting. | |
| JPS63268277A (ja) | 垂直形バリステイツク・トランジスタ | |
| US5206524A (en) | Heterostructure bipolar transistor | |
| Zhang et al. | Effects of displaced pn junction of heterojunction bipolar transistors | |
| US4786957A (en) | Negative differential resistance element | |
| US5158896A (en) | Method for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regions | |
| US5162891A (en) | Group III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating same | |
| US5541424A (en) | Permeable base transistor having laminated layers | |
| JPS62500273A (ja) | 新半導体デバイス | |
| EP0384113A2 (en) | Multilayer base heterojunction biopolar transistor | |
| JP3247961B2 (ja) | ヘテロ接合バイポーラトランジスタ | |
| JP3427953B2 (ja) | 化合物半導体ヘテロ接合型バイポーラトランジスタ | |
| JP3233167B2 (ja) | 半導体装置 | |
| Petrosyan | Negative differential conductivity of a reverse-biased graded heterojunction | |
| JPH0519809B2 (ja) | ||
| Thornton et al. | High gain lateral heterojunction bipolar transistors and application to optoelectronic integration |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |