NL8301461A - Werkwijze voor het vervaardigen van een geintegreerde kondensator en zo verkregen inrichting. - Google Patents
Werkwijze voor het vervaardigen van een geintegreerde kondensator en zo verkregen inrichting. Download PDFInfo
- Publication number
- NL8301461A NL8301461A NL8301461A NL8301461A NL8301461A NL 8301461 A NL8301461 A NL 8301461A NL 8301461 A NL8301461 A NL 8301461A NL 8301461 A NL8301461 A NL 8301461A NL 8301461 A NL8301461 A NL 8301461A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- metal
- insulating material
- capacitor
- plate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8207535 | 1982-04-30 | ||
FR8207535A FR2526225B1 (fr) | 1982-04-30 | 1982-04-30 | Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8301461A true NL8301461A (nl) | 1983-11-16 |
Family
ID=9273598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8301461A NL8301461A (nl) | 1982-04-30 | 1983-04-26 | Werkwijze voor het vervaardigen van een geintegreerde kondensator en zo verkregen inrichting. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4481283A (de) |
JP (1) | JPS58200566A (de) |
DE (1) | DE3314100A1 (de) |
FR (1) | FR2526225B1 (de) |
GB (1) | GB2119570B (de) |
NL (1) | NL8301461A (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4847732A (en) * | 1983-09-15 | 1989-07-11 | Mosaic Systems, Inc. | Wafer and method of making same |
DE3586450T2 (de) * | 1984-02-21 | 1993-03-18 | Environmental Res Inst | Kapazitive vorrichtung. |
FR2575335B1 (fr) * | 1984-12-21 | 1987-06-19 | Thomson Csf | Element capacitif integre sur une pastille de circuit integre, et procede de realisation de cet element capacitif |
US4837520A (en) * | 1985-03-29 | 1989-06-06 | Honeywell Inc. | Fuse status detection circuit |
US4853341A (en) * | 1987-03-25 | 1989-08-01 | Mitsubishi Denki Kabushiki Kaisha | Process for forming electrodes for semiconductor devices using focused ion beams |
GB2208453B (en) * | 1987-08-24 | 1991-11-20 | Marconi Electronic Devices | Capacitors |
US5168078A (en) * | 1988-11-29 | 1992-12-01 | Mcnc | Method of making high density semiconductor structure |
US5025304A (en) * | 1988-11-29 | 1991-06-18 | Mcnc | High density semiconductor structure and method of making the same |
US5098860A (en) * | 1990-05-07 | 1992-03-24 | The Boeing Company | Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers |
ES2103778T3 (es) * | 1990-05-31 | 1997-10-01 | Canon Kk | Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador. |
WO1994007266A1 (en) * | 1992-09-23 | 1994-03-31 | Massachusetts Institute Of Technology | A voltage programmable link having reduced capacitance |
US5371047A (en) * | 1992-10-30 | 1994-12-06 | International Business Machines Corporation | Chip interconnection having a breathable etch stop layer |
US5470801A (en) * | 1993-06-28 | 1995-11-28 | Lsi Logic Corporation | Low dielectric constant insulation layer for integrated circuit structure and method of making same |
US5472913A (en) * | 1994-08-05 | 1995-12-05 | Texas Instruments Incorporated | Method of fabricating porous dielectric material with a passivation layer for electronics applications |
US5739049A (en) * | 1995-08-21 | 1998-04-14 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate |
US5793076A (en) * | 1995-09-21 | 1998-08-11 | Micron Technology, Inc. | Scalable high dielectric constant capacitor |
US5708559A (en) * | 1995-10-27 | 1998-01-13 | International Business Machines Corporation | Precision analog metal-metal capacitor |
US5801916A (en) * | 1995-11-13 | 1998-09-01 | Micron Technology, Inc. | Pre-patterned contact fill capacitor for dielectric etch protection |
US5631804A (en) * | 1995-11-13 | 1997-05-20 | Micron Technology, Inc. | Contact fill capacitor having a sidewall that connects the upper and lower surfaces of the dielectric and partially surrounds an insulating layer |
US5736448A (en) * | 1995-12-04 | 1998-04-07 | General Electric Company | Fabrication method for thin film capacitors |
US5972788A (en) * | 1996-05-22 | 1999-10-26 | International Business Machines Corporation | Method of making flexible interconnections with dual-metal-dual-stud structure |
US6069051A (en) * | 1996-06-17 | 2000-05-30 | International Business Machines Corporation | Method of producing planar metal-to-metal capacitor for use in integrated circuits |
KR100267087B1 (en) * | 1997-01-07 | 2000-10-02 | Samsung Electronics Co Ltd | Manufacturing method of capacitor device |
SE520173C2 (sv) * | 1997-04-29 | 2003-06-03 | Ericsson Telefon Ab L M | Förfarande för tillverkning av en kondensator i en integrerad krets |
US6048763A (en) * | 1997-08-21 | 2000-04-11 | Micron Technology, Inc. | Integrated capacitor bottom electrode with etch stop layer |
US5920763A (en) * | 1997-08-21 | 1999-07-06 | Micron Technology, Inc. | Method and apparatus for improving the structural integrity of stacked capacitors |
US6342681B1 (en) * | 1997-10-15 | 2002-01-29 | Avx Corporation | Surface mount coupler device |
KR100275727B1 (ko) * | 1998-01-06 | 2001-01-15 | 윤종용 | 반도체 장치의 커패시터 형성방법 |
US6025226A (en) * | 1998-01-15 | 2000-02-15 | International Business Machines Corporation | Method of forming a capacitor and a capacitor formed using the method |
US6081021A (en) * | 1998-01-15 | 2000-06-27 | International Business Machines Corporation | Conductor-insulator-conductor structure |
US6090656A (en) | 1998-05-08 | 2000-07-18 | Lsi Logic | Linear capacitor and process for making same |
JP2000003991A (ja) * | 1998-06-15 | 2000-01-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6124164A (en) * | 1998-09-17 | 2000-09-26 | Micron Technology, Inc. | Method of making integrated capacitor incorporating high K dielectric |
JP3516593B2 (ja) * | 1998-09-22 | 2004-04-05 | シャープ株式会社 | 半導体装置及びその製造方法 |
US6323078B1 (en) * | 1999-10-14 | 2001-11-27 | Agere Systems Guardian Corp. | Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby |
US6384468B1 (en) | 2000-02-07 | 2002-05-07 | International Business Machines Corporation | Capacitor and method for forming same |
US6452251B1 (en) | 2000-03-31 | 2002-09-17 | International Business Machines Corporation | Damascene metal capacitor |
US6261917B1 (en) * | 2000-05-09 | 2001-07-17 | Chartered Semiconductor Manufacturing Ltd. | High-K MOM capacitor |
US6486530B1 (en) * | 2000-10-16 | 2002-11-26 | Intarsia Corporation | Integration of anodized metal capacitors and high temperature deposition capacitors |
DE10341059B4 (de) * | 2003-09-05 | 2007-05-31 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren |
CN104465629B (zh) * | 2013-09-23 | 2017-06-09 | 中芯国际集成电路制造(上海)有限公司 | 无源器件结构及其形成方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB907666A (de) * | 1900-01-01 | |||
DE1920684A1 (de) * | 1969-04-23 | 1970-11-05 | Siemens Ag | Verfahren zum Herstellen von Aluminium-Aluminiumoxid-Metall-Kondensatoren in integrierten Schaltungen |
NL7002117A (de) * | 1970-02-14 | 1971-08-17 | ||
FR2138339B1 (de) * | 1971-05-24 | 1974-08-19 | Radiotechnique Compelec | |
JPS4884579A (de) * | 1972-02-12 | 1973-11-09 | ||
US3864817A (en) * | 1972-06-26 | 1975-02-11 | Sprague Electric Co | Method of making capacitor and resistor for monolithic integrated circuits |
JPS5290279A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Mos memory device |
JPS6032357B2 (ja) * | 1977-03-04 | 1985-07-27 | 松下電器産業株式会社 | 容量素子の製造方法 |
JPS54158884A (en) * | 1978-06-06 | 1979-12-15 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
DE2912439A1 (de) * | 1979-03-29 | 1980-10-16 | Standard Elektrik Lorenz Ag | Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten |
US4261772A (en) * | 1979-07-06 | 1981-04-14 | American Microsystems, Inc. | Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques |
JPS5771162A (en) * | 1980-10-22 | 1982-05-01 | Hitachi Ltd | Semiconductor device |
FR2493045A1 (fr) * | 1980-10-23 | 1982-04-30 | Thomson Csf | Structure de capacite dans un circuit integre a deux niveaux de metallisation et procede de fabrication |
-
1982
- 1982-04-30 FR FR8207535A patent/FR2526225B1/fr not_active Expired
-
1983
- 1983-03-28 US US06/479,426 patent/US4481283A/en not_active Expired - Fee Related
- 1983-04-19 DE DE19833314100 patent/DE3314100A1/de not_active Withdrawn
- 1983-04-26 NL NL8301461A patent/NL8301461A/nl not_active Application Discontinuation
- 1983-04-27 GB GB08311430A patent/GB2119570B/en not_active Expired
- 1983-04-28 JP JP58074232A patent/JPS58200566A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58200566A (ja) | 1983-11-22 |
FR2526225A1 (fr) | 1983-11-04 |
FR2526225B1 (fr) | 1985-11-08 |
GB8311430D0 (en) | 1983-06-02 |
GB2119570B (en) | 1985-09-18 |
GB2119570A (en) | 1983-11-16 |
DE3314100A1 (de) | 1983-11-03 |
US4481283A (en) | 1984-11-06 |
JPH0481334B2 (de) | 1992-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |