NL8202092A - Magnetronkathodesputtersysteem. - Google Patents

Magnetronkathodesputtersysteem. Download PDF

Info

Publication number
NL8202092A
NL8202092A NL8202092A NL8202092A NL8202092A NL 8202092 A NL8202092 A NL 8202092A NL 8202092 A NL8202092 A NL 8202092A NL 8202092 A NL8202092 A NL 8202092A NL 8202092 A NL8202092 A NL 8202092A
Authority
NL
Netherlands
Prior art keywords
cathode
rod
anode
auxiliary electrode
substrate
Prior art date
Application number
NL8202092A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8202092A priority Critical patent/NL8202092A/nl
Priority to US06/492,107 priority patent/US4427524A/en
Priority to DE8383200697T priority patent/DE3373590D1/de
Priority to EP83200697A priority patent/EP0095211B1/en
Priority to AT83200697T priority patent/ATE29623T1/de
Priority to AU14682/83A priority patent/AU557135B2/en
Priority to CA000428547A priority patent/CA1193998A/en
Priority to JP58087822A priority patent/JPS58210167A/ja
Publication of NL8202092A publication Critical patent/NL8202092A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Microwave Tubes (AREA)
  • Particle Accelerators (AREA)
NL8202092A 1982-05-21 1982-05-21 Magnetronkathodesputtersysteem. NL8202092A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL8202092A NL8202092A (nl) 1982-05-21 1982-05-21 Magnetronkathodesputtersysteem.
US06/492,107 US4427524A (en) 1982-05-21 1983-05-06 Magnetron cathode sputtering system
DE8383200697T DE3373590D1 (en) 1982-05-21 1983-05-17 Magnetron cathode sputtering system
EP83200697A EP0095211B1 (en) 1982-05-21 1983-05-17 Magnetron cathode sputtering system
AT83200697T ATE29623T1 (de) 1982-05-21 1983-05-17 Magnetron kathodenzerstauebungssystem.
AU14682/83A AU557135B2 (en) 1982-05-21 1983-05-19 Magnetron cathode sputtering system
CA000428547A CA1193998A (en) 1982-05-21 1983-05-19 Magnetron cathode sputtering system
JP58087822A JPS58210167A (ja) 1982-05-21 1983-05-20 マグネトロン形カソ−ドスパツタ装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8202092A NL8202092A (nl) 1982-05-21 1982-05-21 Magnetronkathodesputtersysteem.
NL8202092 1982-05-21

Publications (1)

Publication Number Publication Date
NL8202092A true NL8202092A (nl) 1983-12-16

Family

ID=19839767

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8202092A NL8202092A (nl) 1982-05-21 1982-05-21 Magnetronkathodesputtersysteem.

Country Status (8)

Country Link
US (1) US4427524A (ja)
EP (1) EP0095211B1 (ja)
JP (1) JPS58210167A (ja)
AT (1) ATE29623T1 (ja)
AU (1) AU557135B2 (ja)
CA (1) CA1193998A (ja)
DE (1) DE3373590D1 (ja)
NL (1) NL8202092A (ja)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4515675A (en) * 1983-07-06 1985-05-07 Leybold-Heraeus Gmbh Magnetron cathode for cathodic evaportion apparatus
US4508612A (en) * 1984-03-07 1985-04-02 International Business Machines Corporation Shield for improved magnetron sputter deposition into surface recesses
US4606806A (en) * 1984-05-17 1986-08-19 Varian Associates, Inc. Magnetron sputter device having planar and curved targets
EP0162643B1 (en) * 1984-05-17 1989-04-12 Varian Associates, Inc. Sputter coating source having plural target rings
JPS62287073A (ja) * 1986-06-04 1987-12-12 Sony Corp マグネトロンスパツタリング用カソ−ド装置
US4728406A (en) * 1986-08-18 1988-03-01 Energy Conversion Devices, Inc. Method for plasma - coating a semiconductor body
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
DE3634710A1 (de) * 1986-10-11 1988-04-21 Ver Glaswerke Gmbh Vorrichtung zum vakuumbeschichten einer glasscheibe durch reaktive kathodenzerstaeubung
DE3721373A1 (de) * 1987-06-29 1989-01-12 Leybold Ag Beschichtungsvorrichtung
DE3738845A1 (de) * 1987-11-16 1989-05-24 Leybold Ag Zerstaeubungskatode nach dem magnetronprinzip
KR970002340B1 (ko) * 1988-07-15 1997-03-03 미쓰비시 가세이 가부시끼가이샤 자기 기록 매체의 제조방법
JP2934711B2 (ja) * 1989-12-07 1999-08-16 カシオ計算機株式会社 スパッタ装置
US5298720A (en) * 1990-04-25 1994-03-29 International Business Machines Corporation Method and apparatus for contamination control in processing apparatus containing voltage driven electrode
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
US5080772A (en) * 1990-08-24 1992-01-14 Materials Research Corporation Method of improving ion flux distribution uniformity on a substrate
DE4221930C2 (de) * 1991-11-21 2001-04-05 Leybold Ag Vorrichtung zur haftfesten Beschichtung eines Kunststoffsubstrats
JP2570594Y2 (ja) * 1991-12-17 1998-05-06 日新電機株式会社 薄膜形成装置
DE4202211A1 (de) * 1992-01-28 1993-07-29 Leybold Ag Sputteranlage mit wenigstens einer magnetron-kathode
NL1000139C2 (nl) * 1995-04-13 1996-10-15 Od & Me Bv Magnetronsputtersysteem.
CH691643A5 (de) * 1995-10-06 2001-08-31 Unaxis Balzers Ag Magnetronzerstäubungsquelle und deren Verwendung.
US5863399A (en) * 1996-04-13 1999-01-26 Singulus Technologies Gmbh Device for cathode sputtering
DE19614599A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
DE19614595A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
DE19947932C1 (de) * 1999-09-28 2001-04-26 Fraunhofer Ges Forschung Einrichtung zum Magnetronzerstäuben
US6783638B2 (en) * 2001-09-07 2004-08-31 Sputtered Films, Inc. Flat magnetron
JP4563629B2 (ja) * 2001-11-19 2010-10-13 株式会社エフ・ティ・エスコーポレーション 対向ターゲット式スパッタ装置
US8038850B2 (en) * 2006-06-23 2011-10-18 Qimonda Ag Sputter deposition method for forming integrated circuit
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
US8691057B2 (en) * 2008-03-25 2014-04-08 Oem Group Stress adjustment in reactive sputtering
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
ES2374775B1 (es) * 2009-04-03 2013-01-03 Universidad De Castilla La Mancha Unidad de pulverización catódica de blancos circulares.
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
US9127356B2 (en) * 2011-08-18 2015-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Sputtering target with reverse erosion profile surface and sputtering system and method using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330752A (en) * 1964-12-31 1967-07-11 Ibm Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field
US3897325A (en) * 1972-10-20 1975-07-29 Nippon Electric Varian Ltd Low temperature sputtering device
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
JPS5585672A (en) * 1978-12-25 1980-06-27 Nec Corp Sputtering apparatus
HU179482B (en) * 1979-02-19 1982-10-28 Mikroelektronikai Valalat Penning pulverizel source

Also Published As

Publication number Publication date
EP0095211A3 (en) 1984-05-09
EP0095211A2 (en) 1983-11-30
EP0095211B1 (en) 1987-09-09
AU557135B2 (en) 1986-12-04
CA1193998A (en) 1985-09-24
DE3373590D1 (en) 1987-10-15
JPH0227433B2 (ja) 1990-06-18
JPS58210167A (ja) 1983-12-07
US4427524A (en) 1984-01-24
ATE29623T1 (de) 1987-09-15
AU1468283A (en) 1983-11-24

Similar Documents

Publication Publication Date Title
NL8202092A (nl) Magnetronkathodesputtersysteem.
US4282083A (en) Penning sputter source
US2993638A (en) Electrical vacuum pump apparatus and method
EP0115119B1 (en) Shaped field magnetron electrode
US3472751A (en) Method and apparatus for forming deposits on a substrate by cathode sputtering using a focussed ion beam
US2925214A (en) Ionic vacuum pump
US3897325A (en) Low temperature sputtering device
US4434042A (en) Planar magnetron sputtering apparatus
US4179351A (en) Cylindrical magnetron sputtering source
EP0088463B1 (en) Magnetron cathode sputtering system
US3669860A (en) Method and apparatus for applying a film to a substrate surface by diode sputtering
NL9301480A (nl) Inrichting voor het opwekken van een plasma door middel van kathodeverstuiving en microgolfbestraling.
US2752519A (en) Method and apparatus for use in chemical evaporation processes
US3535055A (en) Cold-cathode discharge ion pump
US2316276A (en) Electron discharge apparatus
JPH1018043A (ja) プラズマ蒸着システム用スロット付ｒｆコイル
JP2849771B2 (ja) スパッタ型イオン源
US3989975A (en) Ion bombardment apparatus
JP2552701B2 (ja) イオン源
US2576129A (en) Nonemitting electron tube grid
US1684263A (en) Hot-cathode device
US3391297A (en) Photoconductive target having arsenicselenium layers of different densities on cryolite layer
US3483114A (en) Rf sputtering apparatus including a wave reflector positioned behind the target
JP3281924B2 (ja) イオンビームスパッタリング装置
US2776227A (en) Method of processing a photosensitive mosaic electrode

Legal Events

Date Code Title Description
A1B A search report has been drawn up
BV The patent application has lapsed