JPS5585672A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
JPS5585672A
JPS5585672A JP16174878A JP16174878A JPS5585672A JP S5585672 A JPS5585672 A JP S5585672A JP 16174878 A JP16174878 A JP 16174878A JP 16174878 A JP16174878 A JP 16174878A JP S5585672 A JPS5585672 A JP S5585672A
Authority
JP
Japan
Prior art keywords
target
electrons
magnetic field
sputtered
waveless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16174878A
Other languages
Japanese (ja)
Inventor
Minoru Oosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16174878A priority Critical patent/JPS5585672A/en
Publication of JPS5585672A publication Critical patent/JPS5585672A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To allow metal atoms sputtered from a target to reach a wafer and to well perform secondary electron capturing and plasma containment by setting a secondary electron collector pole at a position right above the waveless quarter of a magnetic field at the flat sputtering target (cathode) surface side. CONSTITUTION:Magnets 3 are set under sputtering target (cathode) 1 so that magnetic poles S are arranged back to back like N-S.S-N, and electrons are restrained by magnetic field 5. Inert gas 6 in a vacuum is ionized with the electrons, and ionized inert gas 6' knocks on target 1 to sputter metal 7, which is then deposited on wafers 2 facing to target 1. On the other hand, secondary electrons 8 generated from target 1 are captured by collector pole 4 (with + voltage applied by power source 13) set at a position right above the waveless quarter of field 5 on S-S of magnets 3. In this apparatus a portion to be sputtered is restricted only to magnetic field portion 9 of S-N, and sputtering does not occur in portion 10 of S-S, so pole 4 does not hinder the sputtered metal.
JP16174878A 1978-12-25 1978-12-25 Sputtering apparatus Pending JPS5585672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16174878A JPS5585672A (en) 1978-12-25 1978-12-25 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16174878A JPS5585672A (en) 1978-12-25 1978-12-25 Sputtering apparatus

Publications (1)

Publication Number Publication Date
JPS5585672A true JPS5585672A (en) 1980-06-27

Family

ID=15741129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16174878A Pending JPS5585672A (en) 1978-12-25 1978-12-25 Sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS5585672A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095211A2 (en) * 1982-05-21 1983-11-30 Koninklijke Philips Electronics N.V. Magnetron cathode sputtering system
JPS59167851A (en) * 1983-03-14 1984-09-21 Hitachi Maxell Ltd Method and apparatus for manufacturing magnetic recording medium
JPS62287073A (en) * 1986-06-04 1987-12-12 Sony Corp Cathode device for magnetron sputtering

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095211A2 (en) * 1982-05-21 1983-11-30 Koninklijke Philips Electronics N.V. Magnetron cathode sputtering system
JPS59167851A (en) * 1983-03-14 1984-09-21 Hitachi Maxell Ltd Method and apparatus for manufacturing magnetic recording medium
JPH0552565B2 (en) * 1983-03-14 1993-08-05 Hitachi Maxell
JPS62287073A (en) * 1986-06-04 1987-12-12 Sony Corp Cathode device for magnetron sputtering

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