NL8201846A - Sensor met een magneetveldgevoelig element en werkwijze voor het vervaardigen daarvan. - Google Patents
Sensor met een magneetveldgevoelig element en werkwijze voor het vervaardigen daarvan. Download PDFInfo
- Publication number
- NL8201846A NL8201846A NL8201846A NL8201846A NL8201846A NL 8201846 A NL8201846 A NL 8201846A NL 8201846 A NL8201846 A NL 8201846A NL 8201846 A NL8201846 A NL 8201846A NL 8201846 A NL8201846 A NL 8201846A
- Authority
- NL
- Netherlands
- Prior art keywords
- magnetic field
- layer
- groove
- substrate
- sensitive element
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 40
- 239000004020 conductor Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 9
- 238000000992 sputter etching Methods 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 239000004922 lacquer Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- FGTXXYHXUYKXMO-UHFFFAOYSA-N gold molybdenum Chemical compound [Mo][Au][Mo] FGTXXYHXUYKXMO-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8201846A NL8201846A (nl) | 1982-05-06 | 1982-05-06 | Sensor met een magneetveldgevoelig element en werkwijze voor het vervaardigen daarvan. |
| EP83200632A EP0094126B1 (de) | 1982-05-06 | 1983-05-03 | Fühler mit einem magnetfeldempfindlichen Element und Verfahren zu dessen Herstellung |
| DE8383200632T DE3362114D1 (en) | 1982-05-06 | 1983-05-03 | Sensor having a magnetic field-sensitive element and method of manufacturing same |
| JP58079225A JPS58203615A (ja) | 1982-05-06 | 1983-05-06 | 磁場感応素子を有するセンサとその製造方法 |
| US06/696,817 US4666554A (en) | 1982-05-06 | 1985-01-31 | Method of manufacturing a sensor having a magnetic field sensitive element |
| US06/696,894 US4568906A (en) | 1982-05-06 | 1985-01-31 | Sensor having a magnetic field-sensitive element with accurately defined weight and thickness dimensions in the nanometer range |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8201846A NL8201846A (nl) | 1982-05-06 | 1982-05-06 | Sensor met een magneetveldgevoelig element en werkwijze voor het vervaardigen daarvan. |
| NL8201846 | 1982-05-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8201846A true NL8201846A (nl) | 1983-12-01 |
Family
ID=19839687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8201846A NL8201846A (nl) | 1982-05-06 | 1982-05-06 | Sensor met een magneetveldgevoelig element en werkwijze voor het vervaardigen daarvan. |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US4666554A (de) |
| EP (1) | EP0094126B1 (de) |
| JP (1) | JPS58203615A (de) |
| DE (1) | DE3362114D1 (de) |
| NL (1) | NL8201846A (de) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4683535A (en) * | 1985-04-02 | 1987-07-28 | Stichting Centruum Voor Micro Electronika Twente | Thin film magnetometer |
| US4782414A (en) * | 1987-07-28 | 1988-11-01 | International Business Machine | Magnetoresistive read transducer with insulator defined trackwidth |
| US5256249A (en) * | 1991-09-17 | 1993-10-26 | Seagate Technology, Inc. | Method of manufacturing a planarized magnetoresistive sensor |
| EP0661733A2 (de) * | 1993-12-21 | 1995-07-05 | International Business Machines Corporation | Eindimensionale Silizium-Quantumdrahtelementen und Verfahren zur Herstellung |
| US5756366A (en) * | 1995-12-21 | 1998-05-26 | Honeywell Inc. | Magnetic hardening of bit edges of magnetoresistive RAM |
| US6178066B1 (en) | 1998-05-27 | 2001-01-23 | Read-Rite Corporation | Method of fabricating an improved thin film device having a small element with well defined corners |
| EP1031844A3 (de) * | 1999-02-25 | 2009-03-11 | Liaisons Electroniques-Mecaniques Lem S.A. | Verfahren zur Herstellung eines elektrischen Stromsensors |
| US6453542B1 (en) * | 2000-02-28 | 2002-09-24 | Headway Technologies, Inc. | Method for fabricating balanced shield connections for noise reduction in MR/GMR read heads |
| US6496334B1 (en) | 2000-05-26 | 2002-12-17 | Read-Rite Corportion | Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof |
| US6801408B1 (en) | 2000-11-02 | 2004-10-05 | Western Digital (Fremont), Inc. | Data storage and retrieval apparatus with thin film read head having a planar sensor element and an extra gap and method of fabrication thereof |
| US6485989B1 (en) | 2001-08-30 | 2002-11-26 | Micron Technology, Inc. | MRAM sense layer isolation |
| US7562436B2 (en) * | 2005-07-29 | 2009-07-21 | Hitachi Global Storage Technologies Netherlands B.V. | Deposition defined trackwidth for very narrow trackwidth CPP device |
| US8125742B2 (en) * | 2007-09-18 | 2012-02-28 | Hitachi Global Storage Technologies Netherlands B.V. | Fabrication of mesoscopic lorentz magnetoresistive structures |
| CN102132168B (zh) * | 2008-09-29 | 2013-07-24 | 欧姆龙株式会社 | 磁场检测元件及信号传递元件 |
| CN111238714B (zh) * | 2020-02-19 | 2021-12-07 | 黑龙江大学 | 一种微压传感器的制作工艺方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3987485A (en) * | 1973-02-20 | 1976-10-19 | Matsushita Electric Industrial Co., Ltd. | Magnetic head with thin film components |
| US3887944A (en) * | 1973-06-29 | 1975-06-03 | Ibm | Method for eliminating part of magnetic crosstalk in magnetoresistive sensors |
| US3881190A (en) * | 1973-09-20 | 1975-04-29 | Ibm | Shielded magnetoresistive magnetic transducer and method of manufacture thereof |
| NL7406962A (nl) * | 1974-05-24 | 1975-11-26 | Philips Nv | Magneetkop welke gebruik maakt van een mag- neetveldgevoelig element en werkwijze voor het vervaardigen daarvan. |
| US4151574A (en) * | 1974-05-24 | 1979-04-24 | U.S. Philips Corporation | Magnetic head using a magnetic field-sensitive element and method of manufacturing same |
| US4256514A (en) * | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
| US4281357A (en) * | 1979-09-10 | 1981-07-28 | Magnex Corporation | Thin film magnetic head and method of making the same |
| US4313782A (en) * | 1979-11-14 | 1982-02-02 | Rca Corporation | Method of manufacturing submicron channel transistors |
| US4353086A (en) * | 1980-05-07 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Silicon integrated circuits |
| NL188432C (nl) * | 1980-12-26 | 1992-06-16 | Nippon Telegraph & Telephone | Werkwijze voor het vervaardigen van een mosfet. |
| JPS5815713A (ja) * | 1981-07-21 | 1983-01-29 | Sanshin Ind Co Ltd | ポ−ト掃気式２サイクルエンジン |
| US4432132A (en) * | 1981-12-07 | 1984-02-21 | Bell Telephone Laboratories, Incorporated | Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features |
| US4444617A (en) * | 1983-01-06 | 1984-04-24 | Rockwell International Corporation | Reactive ion etching of molybdenum silicide and N+ polysilicon |
-
1982
- 1982-05-06 NL NL8201846A patent/NL8201846A/nl not_active Application Discontinuation
-
1983
- 1983-05-03 DE DE8383200632T patent/DE3362114D1/de not_active Expired
- 1983-05-03 EP EP83200632A patent/EP0094126B1/de not_active Expired
- 1983-05-06 JP JP58079225A patent/JPS58203615A/ja active Pending
-
1985
- 1985-01-31 US US06/696,817 patent/US4666554A/en not_active Expired - Fee Related
- 1985-01-31 US US06/696,894 patent/US4568906A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4568906A (en) | 1986-02-04 |
| EP0094126B1 (de) | 1986-02-12 |
| US4666554A (en) | 1987-05-19 |
| JPS58203615A (ja) | 1983-11-28 |
| DE3362114D1 (en) | 1986-03-27 |
| EP0094126A1 (de) | 1983-11-16 |
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| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |