DE3362114D1 - Sensor having a magnetic field-sensitive element and method of manufacturing same - Google Patents
Sensor having a magnetic field-sensitive element and method of manufacturing sameInfo
- Publication number
- DE3362114D1 DE3362114D1 DE8383200632T DE3362114T DE3362114D1 DE 3362114 D1 DE3362114 D1 DE 3362114D1 DE 8383200632 T DE8383200632 T DE 8383200632T DE 3362114 T DE3362114 T DE 3362114T DE 3362114 D1 DE3362114 D1 DE 3362114D1
- Authority
- DE
- Germany
- Prior art keywords
- sensor
- magnetic field
- sensitive element
- manufacturing same
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8201846A NL8201846A (nl) | 1982-05-06 | 1982-05-06 | Sensor met een magneetveldgevoelig element en werkwijze voor het vervaardigen daarvan. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3362114D1 true DE3362114D1 (en) | 1986-03-27 |
Family
ID=19839687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383200632T Expired DE3362114D1 (en) | 1982-05-06 | 1983-05-03 | Sensor having a magnetic field-sensitive element and method of manufacturing same |
Country Status (5)
Country | Link |
---|---|
US (2) | US4666554A (de) |
EP (1) | EP0094126B1 (de) |
JP (1) | JPS58203615A (de) |
DE (1) | DE3362114D1 (de) |
NL (1) | NL8201846A (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4683535A (en) * | 1985-04-02 | 1987-07-28 | Stichting Centruum Voor Micro Electronika Twente | Thin film magnetometer |
US4782414A (en) * | 1987-07-28 | 1988-11-01 | International Business Machine | Magnetoresistive read transducer with insulator defined trackwidth |
US5256249A (en) * | 1991-09-17 | 1993-10-26 | Seagate Technology, Inc. | Method of manufacturing a planarized magnetoresistive sensor |
EP0661733A2 (de) * | 1993-12-21 | 1995-07-05 | International Business Machines Corporation | Eindimensionale Silizium-Quantumdrahtelementen und Verfahren zur Herstellung |
US5756366A (en) * | 1995-12-21 | 1998-05-26 | Honeywell Inc. | Magnetic hardening of bit edges of magnetoresistive RAM |
US6178066B1 (en) | 1998-05-27 | 2001-01-23 | Read-Rite Corporation | Method of fabricating an improved thin film device having a small element with well defined corners |
EP1031844A3 (de) * | 1999-02-25 | 2009-03-11 | Liaisons Electroniques-Mecaniques Lem S.A. | Verfahren zur Herstellung eines elektrischen Stromsensors |
US6453542B1 (en) * | 2000-02-28 | 2002-09-24 | Headway Technologies, Inc. | Method for fabricating balanced shield connections for noise reduction in MR/GMR read heads |
US6496334B1 (en) | 2000-05-26 | 2002-12-17 | Read-Rite Corportion | Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof |
US6801408B1 (en) | 2000-11-02 | 2004-10-05 | Western Digital (Fremont), Inc. | Data storage and retrieval apparatus with thin film read head having a planar sensor element and an extra gap and method of fabrication thereof |
US6485989B1 (en) | 2001-08-30 | 2002-11-26 | Micron Technology, Inc. | MRAM sense layer isolation |
US7562436B2 (en) * | 2005-07-29 | 2009-07-21 | Hitachi Global Storage Technologies Netherlands B.V. | Deposition defined trackwidth for very narrow trackwidth CPP device |
US8125742B2 (en) * | 2007-09-18 | 2012-02-28 | Hitachi Global Storage Technologies Netherlands B.V. | Fabrication of mesoscopic lorentz magnetoresistive structures |
US8963544B2 (en) * | 2008-09-29 | 2015-02-24 | The Research Institute For Electric And Magnetic Materials | Signal transmission device |
CN111238714B (zh) * | 2020-02-19 | 2021-12-07 | 黑龙江大学 | 一种微压传感器的制作工艺方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3987485A (en) * | 1973-02-20 | 1976-10-19 | Matsushita Electric Industrial Co., Ltd. | Magnetic head with thin film components |
US3887944A (en) * | 1973-06-29 | 1975-06-03 | Ibm | Method for eliminating part of magnetic crosstalk in magnetoresistive sensors |
US3881190A (en) * | 1973-09-20 | 1975-04-29 | Ibm | Shielded magnetoresistive magnetic transducer and method of manufacture thereof |
US4151574A (en) * | 1974-05-24 | 1979-04-24 | U.S. Philips Corporation | Magnetic head using a magnetic field-sensitive element and method of manufacturing same |
NL7406962A (nl) * | 1974-05-24 | 1975-11-26 | Philips Nv | Magneetkop welke gebruik maakt van een mag- neetveldgevoelig element en werkwijze voor het vervaardigen daarvan. |
US4256514A (en) * | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
US4281357A (en) * | 1979-09-10 | 1981-07-28 | Magnex Corporation | Thin film magnetic head and method of making the same |
US4313782A (en) * | 1979-11-14 | 1982-02-02 | Rca Corporation | Method of manufacturing submicron channel transistors |
US4353086A (en) * | 1980-05-07 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Silicon integrated circuits |
NL188432C (nl) * | 1980-12-26 | 1992-06-16 | Nippon Telegraph & Telephone | Werkwijze voor het vervaardigen van een mosfet. |
JPS5815713A (ja) * | 1981-07-21 | 1983-01-29 | Sanshin Ind Co Ltd | ポ−ト掃気式2サイクルエンジン |
US4432132A (en) * | 1981-12-07 | 1984-02-21 | Bell Telephone Laboratories, Incorporated | Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features |
US4444617A (en) * | 1983-01-06 | 1984-04-24 | Rockwell International Corporation | Reactive ion etching of molybdenum silicide and N+ polysilicon |
-
1982
- 1982-05-06 NL NL8201846A patent/NL8201846A/nl not_active Application Discontinuation
-
1983
- 1983-05-03 EP EP83200632A patent/EP0094126B1/de not_active Expired
- 1983-05-03 DE DE8383200632T patent/DE3362114D1/de not_active Expired
- 1983-05-06 JP JP58079225A patent/JPS58203615A/ja active Pending
-
1985
- 1985-01-31 US US06/696,817 patent/US4666554A/en not_active Expired - Fee Related
- 1985-01-31 US US06/696,894 patent/US4568906A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4568906A (en) | 1986-02-04 |
NL8201846A (nl) | 1983-12-01 |
EP0094126B1 (de) | 1986-02-12 |
US4666554A (en) | 1987-05-19 |
JPS58203615A (ja) | 1983-11-28 |
EP0094126A1 (de) | 1983-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |