NL8105064A - Beeldopneeminrichting met een ladingsgekoppelde inrichting. - Google Patents
Beeldopneeminrichting met een ladingsgekoppelde inrichting. Download PDFInfo
- Publication number
- NL8105064A NL8105064A NL8105064A NL8105064A NL8105064A NL 8105064 A NL8105064 A NL 8105064A NL 8105064 A NL8105064 A NL 8105064A NL 8105064 A NL8105064 A NL 8105064A NL 8105064 A NL8105064 A NL 8105064A
- Authority
- NL
- Netherlands
- Prior art keywords
- area
- charge
- control gate
- gate
- channel
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000007787 solid Substances 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 108091006146 Channels Proteins 0.000 description 29
- 238000011109 contamination Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 210000001217 buttock Anatomy 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55157831A JPS5780764A (en) | 1980-11-10 | 1980-11-10 | Solid state image pickup element |
| JP15783180 | 1980-11-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8105064A true NL8105064A (nl) | 1982-06-01 |
Family
ID=15658275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8105064A NL8105064A (nl) | 1980-11-10 | 1981-11-09 | Beeldopneeminrichting met een ladingsgekoppelde inrichting. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4504848A (fr) |
| JP (1) | JPS5780764A (fr) |
| CA (1) | CA1171947A (fr) |
| DE (1) | DE3144163A1 (fr) |
| FR (1) | FR2494043A1 (fr) |
| GB (1) | GB2087152B (fr) |
| NL (1) | NL8105064A (fr) |
| SE (1) | SE451655B (fr) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831670A (ja) * | 1981-08-20 | 1983-02-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| JPS5847378A (ja) * | 1981-09-17 | 1983-03-19 | Canon Inc | 撮像素子 |
| JPS58210663A (ja) * | 1982-06-01 | 1983-12-07 | Mitsubishi Electric Corp | 固体撮像装置 |
| JPS5931056A (ja) * | 1982-08-13 | 1984-02-18 | Mitsubishi Electric Corp | 固体撮像素子 |
| US4658497A (en) * | 1983-01-03 | 1987-04-21 | Rca Corporation | Method of making an imaging array having a higher sensitivity |
| US4603342A (en) * | 1983-01-03 | 1986-07-29 | Rca Corporation | Imaging array having higher sensitivity and a method of making the same |
| GB2132818B (en) * | 1983-01-03 | 1987-08-19 | Rca Corp | Imaging array |
| JPS60119182A (ja) * | 1983-11-30 | 1985-06-26 | Mitsubishi Electric Corp | 固体撮像素子 |
| JPS61144874A (ja) * | 1984-12-19 | 1986-07-02 | Toshiba Corp | 電荷転送装置 |
| US4870495A (en) * | 1985-02-22 | 1989-09-26 | Canon Kabushiki Kaisha | Image sensing element and image sensing apparatus for recording a still image |
| JP2727584B2 (ja) * | 1988-09-20 | 1998-03-11 | ソニー株式会社 | 固体撮像装置 |
| US5702971A (en) * | 1995-03-31 | 1997-12-30 | Eastman Kodak Company | Self-aligned LOD antiblooming structure for solid-state imagers |
| KR100332949B1 (ko) * | 2000-05-23 | 2002-04-20 | 윤종용 | 전자 줌 기능에 적합한 고체 촬상 소자 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
| NL165886C (nl) * | 1972-04-03 | 1981-05-15 | Hitachi Ltd | Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers. |
| US3863065A (en) * | 1972-10-02 | 1975-01-28 | Rca Corp | Dynamic control of blooming in charge coupled, image-sensing arrays |
| NL7311600A (nl) * | 1973-08-23 | 1975-02-25 | Philips Nv | Ladingsgekoppelde inrichting. |
| US3896474A (en) * | 1973-09-10 | 1975-07-22 | Fairchild Camera Instr Co | Charge coupled area imaging device with column anti-blooming control |
| US4365261A (en) * | 1977-08-26 | 1982-12-21 | Texas Instruments Incorporated | Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current |
| US4151539A (en) * | 1977-12-23 | 1979-04-24 | The United States Of America As Represented By The Secretary Of The Air Force | Junction-storage JFET bucket-brigade structure |
| US4229752A (en) * | 1978-05-16 | 1980-10-21 | Texas Instruments Incorporated | Virtual phase charge transfer device |
| US4362575A (en) * | 1981-08-27 | 1982-12-07 | Rca Corporation | Method of making buried channel charge coupled device with means for controlling excess charge |
-
1980
- 1980-11-10 JP JP55157831A patent/JPS5780764A/ja active Granted
-
1981
- 1981-10-13 FR FR8119270A patent/FR2494043A1/fr active Granted
- 1981-11-06 DE DE19813144163 patent/DE3144163A1/de active Granted
- 1981-11-09 SE SE8106620A patent/SE451655B/sv not_active IP Right Cessation
- 1981-11-09 CA CA000389696A patent/CA1171947A/fr not_active Expired
- 1981-11-09 GB GB8133745A patent/GB2087152B/en not_active Expired
- 1981-11-09 NL NL8105064A patent/NL8105064A/nl not_active Application Discontinuation
-
1984
- 1984-06-05 US US06/616,800 patent/US4504848A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2087152A (en) | 1982-05-19 |
| CA1171947A (fr) | 1984-07-31 |
| FR2494043A1 (fr) | 1982-05-14 |
| US4504848A (en) | 1985-03-12 |
| GB2087152B (en) | 1984-07-04 |
| SE8106620L (sv) | 1982-05-11 |
| JPS5780764A (en) | 1982-05-20 |
| DE3144163C2 (fr) | 1991-03-07 |
| DE3144163A1 (de) | 1982-06-16 |
| JPH0319711B2 (fr) | 1991-03-15 |
| FR2494043B1 (fr) | 1985-05-10 |
| SE451655B (sv) | 1987-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |