NL8005995A - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL8005995A NL8005995A NL8005995A NL8005995A NL8005995A NL 8005995 A NL8005995 A NL 8005995A NL 8005995 A NL8005995 A NL 8005995A NL 8005995 A NL8005995 A NL 8005995A NL 8005995 A NL8005995 A NL 8005995A
- Authority
- NL
- Netherlands
- Prior art keywords
- zone
- emitter
- diode
- transistor
- base
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000001465 metallisation Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 208000004998 Abdominal Pain Diseases 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 208000002881 Colic Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8005995A NL8005995A (nl) | 1980-11-03 | 1980-11-03 | Halfgeleiderinrichting. |
| US06/310,581 US4530000A (en) | 1980-11-03 | 1981-10-13 | Bipolar transistor with protective diode in collector |
| DE3142644A DE3142644C2 (de) | 1980-11-03 | 1981-10-28 | Halbleiteranordnung mit in einem Halbleiterkörper angeordneten Bipolartransistor und Diode |
| SE8106377A SE457395B (sv) | 1980-11-03 | 1981-10-29 | Halvledaranordning innefattande en halvledarkropp med en bipolaer transistor |
| SE8106377D SE8106377L (sv) | 1980-11-03 | 1981-10-29 | Halvledaranordning |
| CA000389056A CA1173568A (en) | 1980-11-03 | 1981-10-29 | Semiconductor device |
| GB8132751A GB2086655B (en) | 1980-11-03 | 1981-10-30 | Bipolar transistor with integrated diode |
| JP56173170A JPS57106075A (en) | 1980-11-03 | 1981-10-30 | Semiconductor device |
| AU76994/81A AU545211B2 (en) | 1980-11-03 | 1981-10-30 | Bipolar transistors |
| FR8120434A FR2493603B1 (fr) | 1980-11-03 | 1981-10-30 | Dispositif semiconducteur |
| IT24803/81A IT1139664B (it) | 1980-11-03 | 1981-10-30 | Dispositivo semiconduttore |
| AT0468281A AT386907B (de) | 1980-11-03 | 1981-11-02 | Halbleiteranordnung mit in einem hableiterkoerper angeordneten bipolartransistor und diode |
| JP1990087079U JPH0336132U (US20080094685A1-20080424-C00004.png) | 1980-11-03 | 1990-08-22 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8005995A NL8005995A (nl) | 1980-11-03 | 1980-11-03 | Halfgeleiderinrichting. |
| NL8005995 | 1980-11-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8005995A true NL8005995A (nl) | 1982-06-01 |
Family
ID=19836098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8005995A NL8005995A (nl) | 1980-11-03 | 1980-11-03 | Halfgeleiderinrichting. |
Country Status (11)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3331631A1 (de) * | 1982-09-01 | 1984-03-01 | Mitsubishi Denki K.K., Tokyo | Halbleiter-bauelement |
| JPS60154552A (ja) * | 1984-01-23 | 1985-08-14 | Mitsubishi Electric Corp | 電力用半導体装置 |
| JPS6165762U (US20080094685A1-20080424-C00004.png) * | 1984-10-03 | 1986-05-06 | ||
| JPH0770539B2 (ja) * | 1985-02-01 | 1995-07-31 | サンケン電気株式会社 | トランジスタ |
| CH668505A5 (de) * | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
| JPH0654796B2 (ja) * | 1986-07-14 | 1994-07-20 | 株式会社日立製作所 | 複合半導体装置 |
| US4974260A (en) * | 1989-06-02 | 1990-11-27 | Eastman Kodak Company | Apparatus for identifying and correcting unrecognizable characters in optical character recognition machines |
| GB2239986A (en) * | 1990-01-10 | 1991-07-17 | Philips Electronic Associated | A semiconductor device with increased breakdown voltage |
| DE69528683T2 (de) * | 1994-04-15 | 2003-06-12 | Toshiba Kawasaki Kk | Halbleiterbauteil und Verfahren zur Herstellung desselben |
| US6004840A (en) * | 1994-04-15 | 1999-12-21 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion |
| US6839305B2 (en) * | 2001-02-16 | 2005-01-04 | Neil Perlman | Habit cessation aide |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2206353A1 (de) * | 1971-02-11 | 1972-10-26 | Motorola Inc., Franklin Park, 111. (V.StA.) | Integrierter Transistor und Emitter-Kollektor-Diode |
| US3936863A (en) * | 1974-09-09 | 1976-02-03 | Rca Corporation | Integrated power transistor with ballasting resistance and breakdown protection |
| JPS5138289U (US20080094685A1-20080424-C00004.png) * | 1974-09-13 | 1976-03-22 | ||
| FR2302594A1 (fr) * | 1975-02-28 | 1976-09-24 | Radiotechnique Compelec | Dispositif semi-conducteur integre |
| US4017882A (en) * | 1975-12-15 | 1977-04-12 | Rca Corporation | Transistor having integrated protection |
| DE2718644C2 (de) * | 1977-04-27 | 1979-07-12 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter |
| NL184185C (nl) * | 1978-04-07 | 1989-05-01 | Philips Nv | Darlingtonschakeling met een geintegreerde halfgeleiderdiode. |
| JPS5559767A (en) * | 1978-10-30 | 1980-05-06 | Hitachi Ltd | Semiconductor device, method of fabricating the same and application thereof |
| JPS5559769A (en) * | 1978-10-30 | 1980-05-06 | Nec Corp | Switching transistor |
-
1980
- 1980-11-03 NL NL8005995A patent/NL8005995A/nl not_active Application Discontinuation
-
1981
- 1981-10-13 US US06/310,581 patent/US4530000A/en not_active Expired - Fee Related
- 1981-10-28 DE DE3142644A patent/DE3142644C2/de not_active Expired
- 1981-10-29 SE SE8106377A patent/SE457395B/sv not_active IP Right Cessation
- 1981-10-29 SE SE8106377D patent/SE8106377L/xx not_active Application Discontinuation
- 1981-10-29 CA CA000389056A patent/CA1173568A/en not_active Expired
- 1981-10-30 JP JP56173170A patent/JPS57106075A/ja active Pending
- 1981-10-30 IT IT24803/81A patent/IT1139664B/it active
- 1981-10-30 FR FR8120434A patent/FR2493603B1/fr not_active Expired
- 1981-10-30 AU AU76994/81A patent/AU545211B2/en not_active Ceased
- 1981-10-30 GB GB8132751A patent/GB2086655B/en not_active Expired
- 1981-11-02 AT AT0468281A patent/AT386907B/de not_active IP Right Cessation
-
1990
- 1990-08-22 JP JP1990087079U patent/JPH0336132U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336132U (US20080094685A1-20080424-C00004.png) | 1991-04-09 |
| DE3142644C2 (de) | 1986-09-11 |
| IT8124803A0 (it) | 1981-10-30 |
| CA1173568A (en) | 1984-08-28 |
| SE8106377L (sv) | 1982-05-04 |
| DE3142644A1 (de) | 1982-06-24 |
| IT1139664B (it) | 1986-09-24 |
| AU7699481A (en) | 1982-05-13 |
| ATA468281A (de) | 1988-03-15 |
| AU545211B2 (en) | 1985-07-04 |
| SE457395B (sv) | 1988-12-19 |
| GB2086655B (en) | 1984-04-18 |
| JPS57106075A (en) | 1982-07-01 |
| FR2493603A1 (fr) | 1982-05-07 |
| GB2086655A (en) | 1982-05-12 |
| AT386907B (de) | 1988-11-10 |
| US4530000A (en) | 1985-07-16 |
| FR2493603B1 (fr) | 1986-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |