NL8003728A - Halfgeleiderlaser. - Google Patents
Halfgeleiderlaser. Download PDFInfo
- Publication number
- NL8003728A NL8003728A NL8003728A NL8003728A NL8003728A NL 8003728 A NL8003728 A NL 8003728A NL 8003728 A NL8003728 A NL 8003728A NL 8003728 A NL8003728 A NL 8003728A NL 8003728 A NL8003728 A NL 8003728A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- passive
- contact layer
- semiconductor
- surface zone
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 60
- 230000005855 radiation Effects 0.000 claims description 18
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000001427 coherent effect Effects 0.000 claims description 3
- 230000005670 electromagnetic radiation Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8003728A NL8003728A (nl) | 1980-06-27 | 1980-06-27 | Halfgeleiderlaser. |
| US06/272,438 US4429396A (en) | 1980-06-27 | 1981-06-10 | Semiconductor laser having a doped surface zone |
| DE19813124240 DE3124240A1 (de) | 1980-06-27 | 1981-06-20 | "halbleiterlaser" |
| AU72112/81A AU7211281A (en) | 1980-06-27 | 1981-06-24 | Semiconductor laser |
| IT22549/81A IT1137926B (it) | 1980-06-27 | 1981-06-24 | Laser a semiconduttore |
| GB8119417A GB2079524B (en) | 1980-06-27 | 1981-06-24 | Semiconductor laser |
| ES503353A ES8204887A1 (es) | 1980-06-27 | 1981-06-25 | Un dispositivo laser semiconductor |
| CA000380538A CA1173547A (en) | 1980-06-27 | 1981-06-25 | Semiconductor laser |
| FR8112671A FR2485823A1 (fr) | 1980-06-27 | 1981-06-26 | Laser semi-conducteur |
| JP56099098A JPS5739595A (en) | 1980-06-27 | 1981-06-27 | Semiconductor laser and method of producing same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8003728A NL8003728A (nl) | 1980-06-27 | 1980-06-27 | Halfgeleiderlaser. |
| NL8003728 | 1980-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8003728A true NL8003728A (nl) | 1982-01-18 |
Family
ID=19835526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8003728A NL8003728A (nl) | 1980-06-27 | 1980-06-27 | Halfgeleiderlaser. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4429396A (enExample) |
| JP (1) | JPS5739595A (enExample) |
| AU (1) | AU7211281A (enExample) |
| CA (1) | CA1173547A (enExample) |
| DE (1) | DE3124240A1 (enExample) |
| ES (1) | ES8204887A1 (enExample) |
| FR (1) | FR2485823A1 (enExample) |
| GB (1) | GB2079524B (enExample) |
| IT (1) | IT1137926B (enExample) |
| NL (1) | NL8003728A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2156585B (en) * | 1984-03-16 | 1987-10-21 | Hitachi Ltd | Light-emitting device electrode |
| FR2575870B1 (fr) * | 1985-01-10 | 1987-01-30 | Sermage Bernard | Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active |
| GB8913070D0 (en) * | 1989-06-07 | 1989-07-26 | Bt & D Technologies Ltd | Semiconductor device |
| US20020108896A1 (en) * | 2001-02-09 | 2002-08-15 | Edward Malkin | Filtration device and method of manufacturing the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1557072A (en) | 1976-10-13 | 1979-12-05 | Standard Telephones Cables Ltd | Stripe lears |
| US4122410A (en) | 1977-05-16 | 1978-10-24 | Rca Corporation | Lateral mode control in semiconductor lasers |
| DE2860817D1 (en) * | 1977-07-01 | 1981-10-15 | Post Office | Light source in an optical communications system |
| FR2440616A1 (fr) * | 1978-10-31 | 1980-05-30 | Bouley Jean Claude | Laser a injection a double heterostructure a profil d'indice de refraction |
-
1980
- 1980-06-27 NL NL8003728A patent/NL8003728A/nl not_active Application Discontinuation
-
1981
- 1981-06-10 US US06/272,438 patent/US4429396A/en not_active Expired - Fee Related
- 1981-06-20 DE DE19813124240 patent/DE3124240A1/de not_active Withdrawn
- 1981-06-24 AU AU72112/81A patent/AU7211281A/en not_active Abandoned
- 1981-06-24 IT IT22549/81A patent/IT1137926B/it active
- 1981-06-24 GB GB8119417A patent/GB2079524B/en not_active Expired
- 1981-06-25 ES ES503353A patent/ES8204887A1/es not_active Expired
- 1981-06-25 CA CA000380538A patent/CA1173547A/en not_active Expired
- 1981-06-26 FR FR8112671A patent/FR2485823A1/fr active Granted
- 1981-06-27 JP JP56099098A patent/JPS5739595A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| ES503353A0 (es) | 1982-05-16 |
| FR2485823B1 (enExample) | 1984-07-13 |
| US4429396A (en) | 1984-01-31 |
| FR2485823A1 (fr) | 1981-12-31 |
| DE3124240A1 (de) | 1982-06-16 |
| IT1137926B (it) | 1986-09-10 |
| AU7211281A (en) | 1982-01-07 |
| IT8122549A0 (it) | 1981-06-24 |
| JPS5739595A (en) | 1982-03-04 |
| GB2079524A (en) | 1982-01-20 |
| GB2079524B (en) | 1983-11-16 |
| ES8204887A1 (es) | 1982-05-16 |
| CA1173547A (en) | 1984-08-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |