FR2485823A1 - Laser semi-conducteur - Google Patents

Laser semi-conducteur Download PDF

Info

Publication number
FR2485823A1
FR2485823A1 FR8112671A FR8112671A FR2485823A1 FR 2485823 A1 FR2485823 A1 FR 2485823A1 FR 8112671 A FR8112671 A FR 8112671A FR 8112671 A FR8112671 A FR 8112671A FR 2485823 A1 FR2485823 A1 FR 2485823A1
Authority
FR
France
Prior art keywords
layer
passive
contact layer
surface area
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8112671A
Other languages
English (en)
French (fr)
Other versions
FR2485823B1 (enExample
Inventor
Peter Jan De Waard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2485823A1 publication Critical patent/FR2485823A1/fr
Application granted granted Critical
Publication of FR2485823B1 publication Critical patent/FR2485823B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR8112671A 1980-06-27 1981-06-26 Laser semi-conducteur Granted FR2485823A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8003728A NL8003728A (nl) 1980-06-27 1980-06-27 Halfgeleiderlaser.

Publications (2)

Publication Number Publication Date
FR2485823A1 true FR2485823A1 (fr) 1981-12-31
FR2485823B1 FR2485823B1 (enExample) 1984-07-13

Family

ID=19835526

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8112671A Granted FR2485823A1 (fr) 1980-06-27 1981-06-26 Laser semi-conducteur

Country Status (10)

Country Link
US (1) US4429396A (enExample)
JP (1) JPS5739595A (enExample)
AU (1) AU7211281A (enExample)
CA (1) CA1173547A (enExample)
DE (1) DE3124240A1 (enExample)
ES (1) ES8204887A1 (enExample)
FR (1) FR2485823A1 (enExample)
GB (1) GB2079524B (enExample)
IT (1) IT1137926B (enExample)
NL (1) NL8003728A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156585B (en) * 1984-03-16 1987-10-21 Hitachi Ltd Light-emitting device electrode
FR2575870B1 (fr) * 1985-01-10 1987-01-30 Sermage Bernard Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active
GB8913070D0 (en) * 1989-06-07 1989-07-26 Bt & D Technologies Ltd Semiconductor device
US20020108896A1 (en) * 2001-02-09 2002-08-15 Edward Malkin Filtration device and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000267A1 (en) * 1977-07-01 1979-01-10 The Post Office Light source in an optical communications system
FR2440616A1 (fr) * 1978-10-31 1980-05-30 Bouley Jean Claude Laser a injection a double heterostructure a profil d'indice de refraction

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1557072A (en) 1976-10-13 1979-12-05 Standard Telephones Cables Ltd Stripe lears
US4122410A (en) 1977-05-16 1978-10-24 Rca Corporation Lateral mode control in semiconductor lasers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000267A1 (en) * 1977-07-01 1979-01-10 The Post Office Light source in an optical communications system
FR2440616A1 (fr) * 1978-10-31 1980-05-30 Bouley Jean Claude Laser a injection a double heterostructure a profil d'indice de refraction

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Also Published As

Publication number Publication date
ES503353A0 (es) 1982-05-16
FR2485823B1 (enExample) 1984-07-13
US4429396A (en) 1984-01-31
DE3124240A1 (de) 1982-06-16
IT1137926B (it) 1986-09-10
AU7211281A (en) 1982-01-07
NL8003728A (nl) 1982-01-18
IT8122549A0 (it) 1981-06-24
JPS5739595A (en) 1982-03-04
GB2079524A (en) 1982-01-20
GB2079524B (en) 1983-11-16
ES8204887A1 (es) 1982-05-16
CA1173547A (en) 1984-08-28

Similar Documents

Publication Publication Date Title
EP0829934B1 (fr) Procédé de fabrication d'un composant optoélectronique à semiconducteur et composant ou matrice de composants fabriqués selon ce procédé
FR2695261A1 (fr) Laser émetteur en surface et son procédé de fabrication.
EP0545808B1 (fr) Dispositif optoélectronique à très faible résistance série
FR2727791A1 (fr) Dispositif a semi-conducteur optique et procede de fabrication de celui-ci
EP0236189B1 (fr) Structure semi-conductrice monolithique d'un transistor bipolaire à hétérojonction et d'un laser
FR2493616A1 (fr) Laser a injection a heterostructure
FR2555370A1 (fr) Dispositif semi-conducteur servant a engendrer du rayonnement electromagnetique
FR2585522A1 (fr) Laser semi-conducteur
FR2765347A1 (fr) Reflecteur de bragg en semi-conducteur et procede de fabrication
FR2737609A1 (fr) Dispositif semiconducteur du type photodiode et son procede de fabrication
EP0587500A1 (fr) Procédé de fabrication de dispositifs électro-optiques à ruban, notamment de lasers, et dispositifs ainsi obtenus
FR2690286A1 (fr) Cavité laser à hétérostructure semi-conductrice dissymétrique et laser équipé de cette cavité.
EP1138101B1 (fr) Laser de type semi-conducteur
EP1764887B1 (fr) Dispositif opto-electronique comportant un laser et un modulateur integres et procede de realisation associe
EP0232662B1 (fr) Structure semi-conductrice monolithique d'un laser et d'un transistor à effet de champ et son procédé de fabrication
FR2671238A1 (fr) Procede de realisation de lasers semiconducteurs a emission de surface, et lasers obtenus par le procede.
FR2687857A1 (fr) Laser a semiconducteurs et procede de fabrication.
FR2485823A1 (fr) Laser semi-conducteur
FR2731302A1 (fr) Laser a semi-conducteur et procede de fabrication de celui-ci
EP0580717B1 (fr) Dispositif optoelectronique a tres faible capacite parasite et son procede de fabrication
EP0664588A1 (fr) Structure semiconductrice à réseau de diffraction virtuel
EP0096613B1 (fr) Dispositif semi-conducteur photoémetteur de type laser à guidage par gradient d'indice, et procédé de réalisation d'un tel dispositif
FR2820891A1 (fr) Laser semi conducteur a ruban enterre et procede de fabrication
FR2666455A1 (fr) Dispositif optoelectronique et application a la realisation d'un laser et d'un photodetecteur.
FR2683392A1 (fr) Procede de realisation de composants optoelectroniques par epitaxie selective dans un sillon.

Legal Events

Date Code Title Description
ST Notification of lapse