NL7906932A - Negatief resist-materiaal, drager met resist-materiaal en werkwijze voor het volgens een patroon aanbrengen van een laag. - Google Patents
Negatief resist-materiaal, drager met resist-materiaal en werkwijze voor het volgens een patroon aanbrengen van een laag. Download PDFInfo
- Publication number
- NL7906932A NL7906932A NL7906932A NL7906932A NL7906932A NL 7906932 A NL7906932 A NL 7906932A NL 7906932 A NL7906932 A NL 7906932A NL 7906932 A NL7906932 A NL 7906932A NL 7906932 A NL7906932 A NL 7906932A
- Authority
- NL
- Netherlands
- Prior art keywords
- resist material
- material according
- layer
- carbazole
- formula
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 6
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229920001577 copolymer Polymers 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 125000001072 heteroaryl group Chemical group 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 claims description 4
- HWEONUWVYWIJPF-OWOJBTEDSA-N 1-azido-4-[(e)-2-(4-azidophenyl)ethenyl]benzene Chemical compound C1=CC(N=[N+]=[N-])=CC=C1\C=C\C1=CC=C(N=[N+]=[N-])C=C1 HWEONUWVYWIJPF-OWOJBTEDSA-N 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 125000001246 bromo group Chemical group Br* 0.000 claims 1
- 238000004090 dissolution Methods 0.000 claims 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 8
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- DLLOBIBTOUBQQV-UHFFFAOYSA-N 3-bromo-9-ethenylcarbazole Chemical compound C1=CC=C2C3=CC(Br)=CC=C3N(C=C)C2=C1 DLLOBIBTOUBQQV-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- -1 adhesion improvers Substances 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 238000010538 cationic polymerization reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- XWOUTRFQXXRCIU-UHFFFAOYSA-N 1-azido-4-[2-(4-azidophenyl)ethyl]benzene Chemical compound C1=CC(N=[N+]=[N-])=CC=C1CCC1=CC=C(N=[N+]=[N-])C=C1 XWOUTRFQXXRCIU-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- QNSQTJHTVQSWFR-UHFFFAOYSA-N [(4-diazonioiminocyclohexa-2,5-dien-1-ylidene)hydrazinylidene]azanide Chemical compound [N-]=[N+]=NC1=CC=C(N=[N+]=[N-])C=C1 QNSQTJHTVQSWFR-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- OJOSABWCUVCSTQ-UHFFFAOYSA-N cyclohepta-2,4,6-trienylium Chemical compound C1=CC=C[CH+]=C[CH]1 OJOSABWCUVCSTQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000002140 halogenating effect Effects 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- UMFCIIBZHQXRCJ-NSCUHMNNSA-N trans-anol Chemical compound C\C=C\C1=CC=C(O)C=C1 UMFCIIBZHQXRCJ-NSCUHMNNSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F126/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
- C08F126/06—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
- C08F126/12—N-Vinyl-carbazole
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/12—Esters of monohydric alcohols or phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/128—Radiation-activated cross-linking agent containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7906932A NL7906932A (nl) | 1979-09-18 | 1979-09-18 | Negatief resist-materiaal, drager met resist-materiaal en werkwijze voor het volgens een patroon aanbrengen van een laag. |
| US06/183,521 US4348472A (en) | 1979-09-18 | 1980-09-02 | Method of applying a layer in accordance with a pattern on a substrate, a negative resist material and a substrate coated with the resist |
| JP12785780A JPS5651736A (en) | 1979-09-18 | 1980-09-13 | Substrateecopying film deposition system* negative resist* and substrate covered with same resist film |
| EP80200870A EP0025633B1 (en) | 1979-09-18 | 1980-09-16 | A method of applying a layer in accordance with a pattern on a substrate |
| DE8080200870T DE3064426D1 (en) | 1979-09-18 | 1980-09-16 | A method of applying a layer in accordance with a pattern on a substrate |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7906932A NL7906932A (nl) | 1979-09-18 | 1979-09-18 | Negatief resist-materiaal, drager met resist-materiaal en werkwijze voor het volgens een patroon aanbrengen van een laag. |
| NL7906932 | 1979-09-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7906932A true NL7906932A (nl) | 1981-03-20 |
Family
ID=19833863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7906932A NL7906932A (nl) | 1979-09-18 | 1979-09-18 | Negatief resist-materiaal, drager met resist-materiaal en werkwijze voor het volgens een patroon aanbrengen van een laag. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4348472A (cs) |
| EP (1) | EP0025633B1 (cs) |
| JP (1) | JPS5651736A (cs) |
| DE (1) | DE3064426D1 (cs) |
| NL (1) | NL7906932A (cs) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3109728C2 (de) * | 1981-03-13 | 1986-08-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Resiststrukturen |
| DE3109809C2 (de) * | 1981-03-13 | 1986-07-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Resiststrukturen |
| US4474869A (en) * | 1981-05-29 | 1984-10-02 | Hughes Aircraft Company | Polyvinylpyridine radiation resists |
| JPS58122532A (ja) * | 1982-01-18 | 1983-07-21 | Fujitsu Ltd | ホログラム記録材料 |
| US4556625A (en) * | 1982-07-09 | 1985-12-03 | Armstrong World Industries, Inc. | Development of a colored image on a cellulosic material with monosulfonyl azides |
| US4515886A (en) * | 1983-02-16 | 1985-05-07 | Toyo Soda Manufacturing Co., Ltd. | Photosensitive compositions |
| US4596761A (en) * | 1983-11-02 | 1986-06-24 | Hughes Aircraft Company | Graft polymerized SiO2 lithographic masks |
| US4640885A (en) * | 1983-11-25 | 1987-02-03 | Armstrong World Industries, Inc. | Mono-sulfonyl azide composition used to photolytically develop a colored image on a cellulosic material |
| US5240795A (en) * | 1988-07-04 | 1993-08-31 | Canon Kabushiki Kaisha | Volume phase type hologram film and photosensitive resin composition employed therefor |
| JPH0442229A (ja) * | 1990-06-08 | 1992-02-12 | Fujitsu Ltd | レジスト材料およびパターンの形成方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3284198A (en) * | 1963-09-11 | 1966-11-08 | Martin Marietta Corp | Method for making photolithographic plate |
| US3421891A (en) * | 1964-06-18 | 1969-01-14 | Matsushita Electric Industrial Co Ltd | Electrophotographic materials comprising brominated poly-n-vinyl carbazoles |
| US3538125A (en) * | 1967-11-13 | 1970-11-03 | Motorola Inc | Photosensitizer |
| JPS495066B1 (cs) * | 1969-07-18 | 1974-02-05 | ||
| JPS5139915B2 (cs) * | 1973-02-09 | 1976-10-30 | ||
| JPS576573B2 (cs) * | 1973-11-05 | 1982-02-05 | ||
| JPS5315153A (en) * | 1976-07-27 | 1978-02-10 | Canon Inc | Hologram |
-
1979
- 1979-09-18 NL NL7906932A patent/NL7906932A/nl not_active Application Discontinuation
-
1980
- 1980-09-02 US US06/183,521 patent/US4348472A/en not_active Expired - Lifetime
- 1980-09-13 JP JP12785780A patent/JPS5651736A/ja active Granted
- 1980-09-16 DE DE8080200870T patent/DE3064426D1/de not_active Expired
- 1980-09-16 EP EP80200870A patent/EP0025633B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0025633A1 (en) | 1981-03-25 |
| JPS6332374B2 (cs) | 1988-06-29 |
| US4348472A (en) | 1982-09-07 |
| DE3064426D1 (en) | 1983-09-01 |
| EP0025633B1 (en) | 1983-07-27 |
| JPS5651736A (en) | 1981-05-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |