NL7905891A - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL7905891A NL7905891A NL7905891A NL7905891A NL7905891A NL 7905891 A NL7905891 A NL 7905891A NL 7905891 A NL7905891 A NL 7905891A NL 7905891 A NL7905891 A NL 7905891A NL 7905891 A NL7905891 A NL 7905891A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- silicon nitride
- semiconductor device
- silicon
- resin
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 79
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 108
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 108
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 238000002161 passivation Methods 0.000 claims description 30
- 239000005360 phosphosilicate glass Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 239000011347 resin Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000009719 polyimide resin Substances 0.000 claims description 4
- 229920006122 polyamide resin Polymers 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 description 45
- 239000010703 silicon Substances 0.000 description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 229910052757 nitrogen Inorganic materials 0.000 description 21
- 239000001257 hydrogen Substances 0.000 description 19
- 230000035882 stress Effects 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 13
- 239000004033 plastic Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910018487 Ni—Cr Inorganic materials 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 230000006355 external stress Effects 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- -1 aluminum compound Chemical class 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000006223 plastic coating Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 241000587161 Gomphocarpus Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241000053208 Porcellio laevis Species 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000000516 activation analysis Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9263378A JPS5519850A (en) | 1978-07-31 | 1978-07-31 | Semiconductor |
JP9263378 | 1978-07-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7905891A true NL7905891A (nl) | 1980-02-04 |
Family
ID=14059838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7905891A NL7905891A (nl) | 1978-07-31 | 1979-07-31 | Halfgeleiderinrichting. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4365264A (de) |
JP (1) | JPS5519850A (de) |
CA (1) | CA1135874A (de) |
DE (1) | DE2931032A1 (de) |
FR (1) | FR2432766B1 (de) |
GB (1) | GB2027273B (de) |
NL (1) | NL7905891A (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56150830A (en) * | 1980-04-25 | 1981-11-21 | Hitachi Ltd | Semiconductor device |
JPS56157037A (en) * | 1980-05-08 | 1981-12-04 | Toshiba Corp | Semiconductor device |
JPS5745259A (en) * | 1980-09-01 | 1982-03-15 | Hitachi Ltd | Resin sealing type semiconductor device |
US5229642A (en) * | 1980-09-01 | 1993-07-20 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
US5552639A (en) * | 1980-09-01 | 1996-09-03 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
US5371411A (en) * | 1980-09-01 | 1994-12-06 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
JPS5762535A (en) * | 1980-10-01 | 1982-04-15 | Hitachi Ltd | Semiconductor device |
JPS57113235A (en) * | 1980-12-29 | 1982-07-14 | Nec Corp | Semiconductor device |
JPS57128036A (en) * | 1981-01-30 | 1982-08-09 | Fujitsu Ltd | Manufacture of semiconductor device |
US4490737A (en) * | 1981-03-16 | 1984-12-25 | Fairchild Camera & Instrument Corp. | Smooth glass insulating film over interconnects on an integrated circuit |
JPS5816548A (ja) * | 1981-07-22 | 1983-01-31 | Toshiba Corp | 半導体装置の製造方法 |
DE3146981A1 (de) * | 1981-11-26 | 1983-06-01 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor in mos-duennschichttechnik, verfahren zu seiner herstellung und verfahren zu seinem betrieb. |
JPS58122738A (ja) * | 1982-01-14 | 1983-07-21 | Toshiba Corp | 半導体装置 |
US4985373A (en) * | 1982-04-23 | 1991-01-15 | At&T Bell Laboratories | Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures |
JPS5994830A (ja) * | 1982-11-24 | 1984-05-31 | Fuji Electric Corp Res & Dev Ltd | 半導体素子の表面保護膜形成方法 |
JPS59119733A (ja) * | 1982-12-24 | 1984-07-11 | Toshiba Corp | 半導体装置 |
JPS601846A (ja) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | 多層配線構造の半導体装置とその製造方法 |
US4571093A (en) * | 1983-11-04 | 1986-02-18 | Burroughs Corporation | Method of testing plastic-packaged semiconductor devices |
US5172203A (en) * | 1983-12-23 | 1992-12-15 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof |
US5162892A (en) * | 1983-12-24 | 1992-11-10 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer |
JPS61501537A (ja) * | 1984-03-22 | 1986-07-24 | モステック・コ−ポレイション | 窒化物ボンディング層 |
JPS61113272A (ja) * | 1984-11-08 | 1986-05-31 | Mitsubishi Electric Corp | 紫外線消去型半導体記憶装置 |
US4612805A (en) * | 1984-12-24 | 1986-09-23 | International Business Machines Corporation | Adhesion characterization test site |
US5528058A (en) * | 1986-03-21 | 1996-06-18 | Advanced Power Technology, Inc. | IGBT device with platinum lifetime control and reduced gaw |
US4764800A (en) * | 1986-05-07 | 1988-08-16 | Advanced Micro Devices, Inc. | Seal structure for an integrated circuit |
JPH0752772B2 (ja) * | 1986-11-22 | 1995-06-05 | ヤマハ株式会社 | 半導体装置の製法 |
DE3880860T2 (de) * | 1987-03-04 | 1993-10-28 | Toshiba Kawasaki Kk | Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung. |
JPS6412577A (en) * | 1987-07-06 | 1989-01-17 | Canon Kk | Thin film transistor |
JPH084109B2 (ja) * | 1987-08-18 | 1996-01-17 | 富士通株式会社 | 半導体装置およびその製造方法 |
US5065222A (en) * | 1987-11-11 | 1991-11-12 | Seiko Instruments Inc. | Semiconductor device having two-layered passivation film |
US5107323A (en) * | 1988-12-22 | 1992-04-21 | At&T Bell Laboratories | Protective layer for high voltage devices |
US5605863A (en) * | 1990-08-31 | 1997-02-25 | Texas Instruments Incorporated | Device packaging using heat spreaders and assisted deposition of wire bonds |
TW214599B (de) * | 1990-10-15 | 1993-10-11 | Seiko Epson Corp | |
JP2752582B2 (ja) * | 1994-05-20 | 1998-05-18 | 株式会社フロンテック | 電子素子及びその製造方法 |
US6870272B2 (en) * | 1994-09-20 | 2005-03-22 | Tessera, Inc. | Methods of making microelectronic assemblies including compliant interfaces |
US5971253A (en) * | 1995-07-31 | 1999-10-26 | Tessera, Inc. | Microelectronic component mounting with deformable shell terminals |
US6211572B1 (en) | 1995-10-31 | 2001-04-03 | Tessera, Inc. | Semiconductor chip package with fan-in leads |
US6284563B1 (en) * | 1995-10-31 | 2001-09-04 | Tessera, Inc. | Method of making compliant microelectronic assemblies |
US6294799B1 (en) * | 1995-11-27 | 2001-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
US5940732A (en) * | 1995-11-27 | 1999-08-17 | Semiconductor Energy Laboratory Co., | Method of fabricating semiconductor device |
KR100271222B1 (ko) * | 1995-12-14 | 2000-12-01 | 오카베 히로무 | 반도체 소자 및 그 제조 방법 |
JPH1070123A (ja) * | 1996-06-17 | 1998-03-10 | Siemens Ag | 表面状態の不動態化を容易にする層を有する装置構造 |
US6635514B1 (en) * | 1996-12-12 | 2003-10-21 | Tessera, Inc. | Compliant package with conductive elastomeric posts |
US6284986B1 (en) * | 1999-03-15 | 2001-09-04 | Seh America, Inc. | Method of determining the thickness of a layer on a silicon substrate |
KR20020011440A (ko) * | 1999-06-17 | 2002-02-08 | 마이클 골위저, 호레스트 쉐퍼 | 가요성 접점을 구비한 전자 소자 및 그 전자 소자의 제조방법 |
DE10016132A1 (de) * | 2000-03-31 | 2001-10-18 | Infineon Technologies Ag | Elektronisches Bauelement mit flexiblen Kontaktierungsstellen und Verfahren zu dessen Herstellung |
DE10116069C2 (de) * | 2001-04-02 | 2003-02-20 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Halbleiterchip und Verfahren zu seiner Herstellung |
US20040121146A1 (en) * | 2002-12-20 | 2004-06-24 | Xiao-Ming He | Composite barrier films and method |
US6940173B2 (en) * | 2003-01-29 | 2005-09-06 | International Business Machines Corporation | Interconnect structures incorporating low-k dielectric barrier films |
US7001844B2 (en) * | 2004-04-30 | 2006-02-21 | International Business Machines Corporation | Material for contact etch layer to enhance device performance |
EP1851798B1 (de) * | 2005-02-25 | 2016-08-03 | Tessera, Inc. | Mikroelektronische baugruppe mit nachgiebigkeit |
US7635919B1 (en) * | 2005-05-26 | 2009-12-22 | Rockwell Collins, Inc. | Low modulus stress buffer coating in microelectronic devices |
US7462527B2 (en) * | 2005-07-06 | 2008-12-09 | International Business Machines Corporation | Method of forming nitride films with high compressive stress for improved PFET device performance |
US7749886B2 (en) | 2006-12-20 | 2010-07-06 | Tessera, Inc. | Microelectronic assemblies having compliancy and methods therefor |
US10270026B2 (en) * | 2017-02-24 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Multilayered spacer structure for a magnetic tunneling junction and method of manufacturing |
JP6876500B2 (ja) * | 2017-04-19 | 2021-05-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN111051975B (zh) * | 2019-11-27 | 2023-03-21 | 京东方科技集团股份有限公司 | 驱动基板及其制备方法、发光基板和显示装置 |
CN111416013A (zh) * | 2020-05-02 | 2020-07-14 | 熵熠(上海)能源科技有限公司 | 一种以氢化非晶氮氧化硅薄膜为钝化层的异质结太阳电池 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4001870A (en) * | 1972-08-18 | 1977-01-04 | Hitachi, Ltd. | Isolating protective film for semiconductor devices and method for making the same |
JPS5421073B2 (de) * | 1974-04-15 | 1979-07-27 | ||
US4097889A (en) * | 1976-11-01 | 1978-06-27 | Rca Corporation | Combination glass/low temperature deposited Siw Nx Hy O.sub.z |
US4091406A (en) * | 1976-11-01 | 1978-05-23 | Rca Corporation | Combination glass/low temperature deposited Siw Nx Hy O.sub.z |
US4091407A (en) * | 1976-11-01 | 1978-05-23 | Rca Corporation | Combination glass/low temperature deposited Siw Nx Hy O.sub.z |
-
1978
- 1978-07-31 JP JP9263378A patent/JPS5519850A/ja active Pending
-
1979
- 1979-07-12 CA CA000331729A patent/CA1135874A/en not_active Expired
- 1979-07-18 FR FR7918556A patent/FR2432766B1/fr not_active Expired
- 1979-07-30 GB GB7926421A patent/GB2027273B/en not_active Expired
- 1979-07-31 DE DE19792931032 patent/DE2931032A1/de not_active Ceased
- 1979-07-31 NL NL7905891A patent/NL7905891A/nl not_active Application Discontinuation
-
1981
- 1981-05-19 US US06/265,167 patent/US4365264A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4365264A (en) | 1982-12-21 |
JPS5519850A (en) | 1980-02-12 |
FR2432766A1 (fr) | 1980-02-29 |
GB2027273A (en) | 1980-02-13 |
FR2432766B1 (fr) | 1985-06-21 |
CA1135874A (en) | 1982-11-16 |
DE2931032A1 (de) | 1980-02-14 |
GB2027273B (en) | 1982-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL7905891A (nl) | Halfgeleiderinrichting. | |
US4091406A (en) | Combination glass/low temperature deposited Siw Nx Hy O.sub.z | |
US4892703A (en) | Surface structure of A1N substrate and a process for producing the same | |
US7190250B2 (en) | Encapsulation with oxide bond to borosilicate mixture | |
EP0820097A1 (de) | Halbleiterchips mit Anschlussfläschen zur Verbesserung des Chip-Testens | |
WO2001067504A1 (en) | Electronic device packaging | |
US20030122453A1 (en) | Elastic wave element and method for fabricating the same | |
US5326623A (en) | Circuit board | |
JP7036838B2 (ja) | 半導体装置用ボンディングワイヤ | |
Aoh et al. | Thermosonic bonding of gold wire onto a copper pad with titanium thin-film deposition | |
Koyama et al. | A new bond failure wire crater in surface mount device | |
KR100335514B1 (ko) | 집적회로서브어셈블리의밀봉방법 | |
Johal et al. | Electroless nickel/electroless palladium/immersion gold plating process for gold-and aluminum-wire bonding designed for high-temperature applications | |
US6004877A (en) | Method of forming a tungsten layer with N2 plasma treatment | |
Wada et al. | Analysis of Corrosion on Aluminum Double‐Layer Metallization | |
JPS62182182A (ja) | 金属化面を有する窒化アルミニウム焼結体 | |
Pecht et al. | Effect of delamination on moisture accelerated failures in plastic encapsulated microcircuits | |
Lee et al. | A novel coupling agent based on Zn-Cr chemistry for enhanced moulding compound to leadframe adhesion and improved popcorn resistance | |
US10978414B2 (en) | Semiconductor device and method of manufacturing a semiconductor device | |
Burger | Fracture mechanical characterization of IC‐device interfaces | |
JP2674670B2 (ja) | 半導体装置の製造方法 | |
Loo et al. | Die attach of large dice with Ag/glass in multilayer packages | |
Ueno | Influence of Al film thickness on bondability of Au wire to Al pad | |
Hsieh et al. | Enhanced adhesion and thermal stability of Al/Cr film on indium-tin-oxide (ITO)-coated glass | |
Ueno | Reliable Au Wire Bonding to Al/Ti/Al Pad |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |