NL7812388A - Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. Download PDF

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Publication number
NL7812388A
NL7812388A NL7812388A NL7812388A NL7812388A NL 7812388 A NL7812388 A NL 7812388A NL 7812388 A NL7812388 A NL 7812388A NL 7812388 A NL7812388 A NL 7812388A NL 7812388 A NL7812388 A NL 7812388A
Authority
NL
Netherlands
Prior art keywords
temperature
growth
substrates
gas flow
epitactic
Prior art date
Application number
NL7812388A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7812388A priority Critical patent/NL7812388A/nl
Priority to CA000341796A priority patent/CA1145065A/en
Priority to JP16369179A priority patent/JPS5588321A/ja
Priority to GB7943451A priority patent/GB2038553B/en
Priority to IT28165/79A priority patent/IT1195749B/it
Priority to DE2950827A priority patent/DE2950827C2/de
Priority to FR7931145A priority patent/FR2445020A1/fr
Publication of NL7812388A publication Critical patent/NL7812388A/nl
Priority to US06/283,397 priority patent/US4389273A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7812388A 1978-12-21 1978-12-21 Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. NL7812388A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL7812388A NL7812388A (nl) 1978-12-21 1978-12-21 Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
CA000341796A CA1145065A (en) 1978-12-21 1979-12-13 Semiconductor device made by epitaxial growth
JP16369179A JPS5588321A (en) 1978-12-21 1979-12-18 Method of fabricating semiconductor device
GB7943451A GB2038553B (en) 1978-12-21 1979-12-18 Vapour phase method for manufacturing epitaxial semiconductor devices
IT28165/79A IT1195749B (it) 1978-12-21 1979-12-18 Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore ottenuto con tale metodo
DE2950827A DE2950827C2 (de) 1978-12-21 1979-12-18 Verfahren zum epitaktischen Abscheiden von einkristallinem Material
FR7931145A FR2445020A1 (fr) 1978-12-21 1979-12-19 Procede de croissance epitaxiale de dispositifs semiconducteurs, au moyen d'un courant gazeux sursature et soumis a un gradient de temperatures et dispositifs obtenus
US06/283,397 US4389273A (en) 1978-12-21 1981-07-15 Method of manufacturing a semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7812388 1978-12-21
NL7812388A NL7812388A (nl) 1978-12-21 1978-12-21 Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.

Publications (1)

Publication Number Publication Date
NL7812388A true NL7812388A (nl) 1980-06-24

Family

ID=19832106

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7812388A NL7812388A (nl) 1978-12-21 1978-12-21 Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.

Country Status (8)

Country Link
US (1) US4389273A (it)
JP (1) JPS5588321A (it)
CA (1) CA1145065A (it)
DE (1) DE2950827C2 (it)
FR (1) FR2445020A1 (it)
GB (1) GB2038553B (it)
IT (1) IT1195749B (it)
NL (1) NL7812388A (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4637127A (en) * 1981-07-07 1987-01-20 Nippon Electric Co., Ltd. Method for manufacturing a semiconductor device
JPS5927611B2 (ja) * 1981-08-08 1984-07-06 富士通株式会社 気相成長方法
JP3159136B2 (ja) * 1997-07-18 2001-04-23 日本電気株式会社 半導体装置の製造方法
US6749687B1 (en) * 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
DE19845252A1 (de) * 1998-10-01 2000-04-06 Deutsche Telekom Ag Verfahren zur Herstellung von Halbleiterschichten
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
US8673081B2 (en) 2009-02-25 2014-03-18 Crystal Solar, Inc. High throughput multi-wafer epitaxial reactor
US8298629B2 (en) 2009-02-25 2012-10-30 Crystal Solar Incorporated High throughput multi-wafer epitaxial reactor
CN107022789B (zh) 2011-05-27 2021-03-12 斯瓦高斯技术股份有限公司 在外延反应器中的硅衬底上外延沉积硅晶片的方法
DE102015225663A1 (de) 2015-12-17 2017-06-22 Siltronic Ag Verfahren zum epitaktischen Beschichten von Halbleiterscheiben und Halbleiterscheibe

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316121A (en) * 1963-10-02 1967-04-25 Northern Electric Co Epitaxial deposition process
US3496037A (en) * 1967-05-29 1970-02-17 Motorola Inc Semiconductor growth on dielectric substrates
US3926715A (en) * 1968-08-14 1975-12-16 Siemens Ag Method of epitactic precipitation of inorganic material
JPS509471B1 (it) * 1968-10-25 1975-04-12
US3634150A (en) * 1969-06-25 1972-01-11 Gen Electric Method for forming epitaxial crystals or wafers in selected regions of substrates
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
FR2227640B1 (it) * 1973-04-27 1977-12-30 Radiotechnique Compelec
JPS5117376A (en) * 1974-08-02 1976-02-12 Mitsubishi Petrochemical Co Fushokufuno seizosochi
DE2456827A1 (de) * 1974-12-02 1976-06-10 Siemens Ag Verfahren zur herstellung von einkristallinen siliziumschichten auf einem einkristallinen saphirsubstrat
SE432162B (sv) * 1976-04-22 1984-03-19 Fujitsu Ltd Forfarande for att utifran en anga bringa en tunn film att tillvexa
US4039357A (en) * 1976-08-27 1977-08-02 Bell Telephone Laboratories, Incorporated Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide
US4200484A (en) * 1977-09-06 1980-04-29 Rockwell International Corporation Method of fabricating multiple layer composite

Also Published As

Publication number Publication date
FR2445020A1 (fr) 1980-07-18
GB2038553A (en) 1980-07-23
US4389273A (en) 1983-06-21
CA1145065A (en) 1983-04-19
IT7928165A0 (it) 1979-12-18
DE2950827A1 (de) 1980-07-10
JPS5588321A (en) 1980-07-04
IT1195749B (it) 1988-10-27
GB2038553B (en) 1983-03-23
FR2445020B1 (it) 1984-10-19
DE2950827C2 (de) 1986-04-10

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