JPS5588321A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5588321A
JPS5588321A JP16369179A JP16369179A JPS5588321A JP S5588321 A JPS5588321 A JP S5588321A JP 16369179 A JP16369179 A JP 16369179A JP 16369179 A JP16369179 A JP 16369179A JP S5588321 A JPS5588321 A JP S5588321A
Authority
JP
Japan
Prior art keywords
semiconductor device
fabricating semiconductor
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16369179A
Other languages
English (en)
Inventor
Buroemu Yan
Hendorikusu Yoanesu Korunerisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5588321A publication Critical patent/JPS5588321A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP16369179A 1978-12-21 1979-12-18 Method of fabricating semiconductor device Pending JPS5588321A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7812388A NL7812388A (nl) 1978-12-21 1978-12-21 Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.

Publications (1)

Publication Number Publication Date
JPS5588321A true JPS5588321A (en) 1980-07-04

Family

ID=19832106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16369179A Pending JPS5588321A (en) 1978-12-21 1979-12-18 Method of fabricating semiconductor device

Country Status (8)

Country Link
US (1) US4389273A (ja)
JP (1) JPS5588321A (ja)
CA (1) CA1145065A (ja)
DE (1) DE2950827C2 (ja)
FR (1) FR2445020A1 (ja)
GB (1) GB2038553B (ja)
IT (1) IT1195749B (ja)
NL (1) NL7812388A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4637127A (en) * 1981-07-07 1987-01-20 Nippon Electric Co., Ltd. Method for manufacturing a semiconductor device
JPS5927611B2 (ja) * 1981-08-08 1984-07-06 富士通株式会社 気相成長方法
JP3159136B2 (ja) * 1997-07-18 2001-04-23 日本電気株式会社 半導体装置の製造方法
US6749687B1 (en) * 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
DE19845252A1 (de) * 1998-10-01 2000-04-06 Deutsche Telekom Ag Verfahren zur Herstellung von Halbleiterschichten
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
US8673081B2 (en) 2009-02-25 2014-03-18 Crystal Solar, Inc. High throughput multi-wafer epitaxial reactor
US8298629B2 (en) 2009-02-25 2012-10-30 Crystal Solar Incorporated High throughput multi-wafer epitaxial reactor
JP6097742B2 (ja) * 2011-05-27 2017-03-15 クリスタル・ソーラー・インコーポレーテッド エピタキシャル堆積によるシリコンウェハ
DE102015225663A1 (de) 2015-12-17 2017-06-22 Siltronic Ag Verfahren zum epitaktischen Beschichten von Halbleiterscheiben und Halbleiterscheibe

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016476A (ja) * 1973-04-27 1975-02-21

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316121A (en) * 1963-10-02 1967-04-25 Northern Electric Co Epitaxial deposition process
US3496037A (en) * 1967-05-29 1970-02-17 Motorola Inc Semiconductor growth on dielectric substrates
US3926715A (en) * 1968-08-14 1975-12-16 Siemens Ag Method of epitactic precipitation of inorganic material
JPS509471B1 (ja) * 1968-10-25 1975-04-12
US3634150A (en) * 1969-06-25 1972-01-11 Gen Electric Method for forming epitaxial crystals or wafers in selected regions of substrates
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
JPS5117376A (en) * 1974-08-02 1976-02-12 Mitsubishi Petrochemical Co Fushokufuno seizosochi
DE2456827A1 (de) * 1974-12-02 1976-06-10 Siemens Ag Verfahren zur herstellung von einkristallinen siliziumschichten auf einem einkristallinen saphirsubstrat
SE432162B (sv) * 1976-04-22 1984-03-19 Fujitsu Ltd Forfarande for att utifran en anga bringa en tunn film att tillvexa
US4039357A (en) * 1976-08-27 1977-08-02 Bell Telephone Laboratories, Incorporated Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide
US4200484A (en) * 1977-09-06 1980-04-29 Rockwell International Corporation Method of fabricating multiple layer composite

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016476A (ja) * 1973-04-27 1975-02-21

Also Published As

Publication number Publication date
IT1195749B (it) 1988-10-27
IT7928165A0 (it) 1979-12-18
FR2445020B1 (ja) 1984-10-19
GB2038553A (en) 1980-07-23
NL7812388A (nl) 1980-06-24
DE2950827C2 (de) 1986-04-10
DE2950827A1 (de) 1980-07-10
GB2038553B (en) 1983-03-23
FR2445020A1 (fr) 1980-07-18
CA1145065A (en) 1983-04-19
US4389273A (en) 1983-06-21

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