NL7604569A
(nl)
*
|
1976-04-29 |
1977-11-01 |
Philips Nv |
Veldemitterinrichting en werkwijze tot het vormen daarvan.
|
FR2443085A1
(fr)
*
|
1978-07-24 |
1980-06-27 |
Thomson Csf |
Dispositif de microlithographie par bombardement electronique
|
JPS608574B2
(ja)
*
|
1978-08-12 |
1985-03-04 |
大阪大学長 |
イオン源用半導体エミツタ−
|
US4291068A
(en)
*
|
1978-10-31 |
1981-09-22 |
The United States Of America As Represented By The Secretary Of The Army |
Method of making semiconductor photodetector with reduced time-constant
|
DE2920569A1
(de)
*
|
1979-05-21 |
1980-12-04 |
Ibm Deutschland |
Elektrodenfuehrung fuer metallpapier- drucker
|
FR2461281A2
(fr)
*
|
1979-07-06 |
1981-01-30 |
Thomson Csf |
Dispositif de microlithographie par bombardement electronique
|
US4307507A
(en)
*
|
1980-09-10 |
1981-12-29 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of manufacturing a field-emission cathode structure
|
US4728851A
(en)
*
|
1982-01-08 |
1988-03-01 |
Ford Motor Company |
Field emitter device with gated memory
|
US4498952A
(en)
*
|
1982-09-17 |
1985-02-12 |
Condesin, Inc. |
Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns
|
US4513308A
(en)
*
|
1982-09-23 |
1985-04-23 |
The United States Of America As Represented By The Secretary Of The Navy |
p-n Junction controlled field emitter array cathode
|
NL8400297A
(nl)
*
|
1984-02-01 |
1985-09-02 |
Philips Nv |
Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
|
FR2568394B1
(fr)
*
|
1984-07-27 |
1988-02-12 |
Commissariat Energie Atomique |
Dispositif de visualisation par cathodoluminescence excitee par emission de champ
|
FR2593953B1
(fr)
*
|
1986-01-24 |
1988-04-29 |
Commissariat Energie Atomique |
Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
|
US5201681A
(en)
*
|
1987-02-06 |
1993-04-13 |
Canon Kabushiki Kaisha |
Method of emitting electrons
|
US5176557A
(en)
*
|
1987-02-06 |
1993-01-05 |
Canon Kabushiki Kaisha |
Electron emission element and method of manufacturing the same
|
JP2616918B2
(ja)
*
|
1987-03-26 |
1997-06-04 |
キヤノン株式会社 |
表示装置
|
US4721885A
(en)
*
|
1987-02-11 |
1988-01-26 |
Sri International |
Very high speed integrated microelectronic tubes
|
USRE40062E1
(en)
*
|
1987-07-15 |
2008-02-12 |
Canon Kabushiki Kaisha |
Display device with electron-emitting device with electron-emitting region insulated from electrodes
|
USRE40566E1
(en)
*
|
1987-07-15 |
2008-11-11 |
Canon Kabushiki Kaisha |
Flat panel display including electron emitting device
|
US5066883A
(en)
*
|
1987-07-15 |
1991-11-19 |
Canon Kabushiki Kaisha |
Electron-emitting device with electron-emitting region insulated from electrodes
|
US5749763A
(en)
*
|
1987-07-15 |
1998-05-12 |
Canon Kabushiki Kaisha |
Display device with electron-emitting device with electron-emitting region insulted from electrodes
|
USRE39633E1
(en)
*
|
1987-07-15 |
2007-05-15 |
Canon Kabushiki Kaisha |
Display device with electron-emitting device with electron-emitting region insulated from electrodes
|
US4818914A
(en)
*
|
1987-07-17 |
1989-04-04 |
Sri International |
High efficiency lamp
|
GB8816689D0
(en)
*
|
1988-07-13 |
1988-08-17 |
Emi Plc Thorn |
Method of manufacturing cold cathode field emission device & field emission device manufactured by method
|
GB2227362B
(en)
*
|
1989-01-18 |
1992-11-04 |
Gen Electric Co Plc |
Electronic devices
|
GB2228822A
(en)
*
|
1989-03-01 |
1990-09-05 |
Gen Electric Co Plc |
Electronic devices.
|
US4975656A
(en)
*
|
1989-03-31 |
1990-12-04 |
Litton Systems, Inc. |
Enhanced secondary electron emitter
|
US4956574A
(en)
*
|
1989-08-08 |
1990-09-11 |
Motorola, Inc. |
Switched anode field emission device
|
JPH04505073A
(ja)
*
|
1989-08-14 |
1992-09-03 |
ヒューズ・エアクラフト・カンパニー |
フィールドエミッタアレイの製造用の自己整列ゲート方法
|
US4943343A
(en)
*
|
1989-08-14 |
1990-07-24 |
Zaher Bardai |
Self-aligned gate process for fabricating field emitter arrays
|
US5019003A
(en)
*
|
1989-09-29 |
1991-05-28 |
Motorola, Inc. |
Field emission device having preformed emitters
|
JP2745814B2
(ja)
*
|
1989-09-29 |
1998-04-28 |
モトローラ・インコーポレイテッド |
電解放出デバイスを用いる平面パネル・ディスプレイ
|
US5055077A
(en)
*
|
1989-11-22 |
1991-10-08 |
Motorola, Inc. |
Cold cathode field emission device having an electrode in an encapsulating layer
|
US5064396A
(en)
*
|
1990-01-29 |
1991-11-12 |
Coloray Display Corporation |
Method of manufacturing an electric field producing structure including a field emission cathode
|
US4964946A
(en)
*
|
1990-02-02 |
1990-10-23 |
The United States Of America As Represented By The Secretary Of The Navy |
Process for fabricating self-aligned field emitter arrays
|
US5030921A
(en)
*
|
1990-02-09 |
1991-07-09 |
Motorola, Inc. |
Cascaded cold cathode field emission devices
|
US5007873A
(en)
*
|
1990-02-09 |
1991-04-16 |
Motorola, Inc. |
Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
|
US5142184B1
(en)
*
|
1990-02-09 |
1995-11-21 |
Motorola Inc |
Cold cathode field emission device with integral emitter ballasting
|
US5079476A
(en)
*
|
1990-02-09 |
1992-01-07 |
Motorola, Inc. |
Encapsulated field emission device
|
US5047830A
(en)
*
|
1990-05-22 |
1991-09-10 |
Amp Incorporated |
Field emitter array integrated circuit chip interconnection
|
US5126287A
(en)
*
|
1990-06-07 |
1992-06-30 |
Mcnc |
Self-aligned electron emitter fabrication method and devices formed thereby
|
FR2663462B1
(fr)
*
|
1990-06-13 |
1992-09-11 |
Commissariat Energie Atomique |
Source d'electrons a cathodes emissives a micropointes.
|
US5141459A
(en)
*
|
1990-07-18 |
1992-08-25 |
International Business Machines Corporation |
Structures and processes for fabricating field emission cathodes
|
US5334908A
(en)
*
|
1990-07-18 |
1994-08-02 |
International Business Machines Corporation |
Structures and processes for fabricating field emission cathode tips using secondary cusp
|
DE69027611T2
(de)
*
|
1990-07-18 |
1997-01-23 |
Ibm |
Herstellungsverfahren und struktur einer integrierten vakuum-mikroelektronischen vorrichtung
|
US5203731A
(en)
*
|
1990-07-18 |
1993-04-20 |
International Business Machines Corporation |
Process and structure of an integrated vacuum microelectronic device
|
US5163328A
(en)
*
|
1990-08-06 |
1992-11-17 |
Colin Electronics Co., Ltd. |
Miniature pressure sensor and pressure sensor arrays
|
US5148078A
(en)
*
|
1990-08-29 |
1992-09-15 |
Motorola, Inc. |
Field emission device employing a concentric post
|
US5461280A
(en)
*
|
1990-08-29 |
1995-10-24 |
Motorola |
Field emission device employing photon-enhanced electron emission
|
US5156705A
(en)
*
|
1990-09-10 |
1992-10-20 |
Motorola, Inc. |
Non-homogeneous multi-elemental electron emitter
|
US5157309A
(en)
*
|
1990-09-13 |
1992-10-20 |
Motorola Inc. |
Cold-cathode field emission device employing a current source means
|
US5136764A
(en)
*
|
1990-09-27 |
1992-08-11 |
Motorola, Inc. |
Method for forming a field emission device
|
US5281890A
(en)
*
|
1990-10-30 |
1994-01-25 |
Motorola, Inc. |
Field emission device having a central anode
|
US5218273A
(en)
*
|
1991-01-25 |
1993-06-08 |
Motorola, Inc. |
Multi-function field emission device
|
JP2626276B2
(ja)
*
|
1991-02-06 |
1997-07-02 |
双葉電子工業株式会社 |
電子放出素子
|
JP2719239B2
(ja)
*
|
1991-02-08 |
1998-02-25 |
工業技術院長 |
電界放出素子
|
US5312514A
(en)
*
|
1991-11-07 |
1994-05-17 |
Microelectronics And Computer Technology Corporation |
Method of making a field emitter device using randomly located nuclei as an etch mask
|
JP3116398B2
(ja)
*
|
1991-03-13 |
2000-12-11 |
ソニー株式会社 |
平面型電子放出素子の製造方法及び平面型電子放出素子
|
US5245248A
(en)
*
|
1991-04-09 |
1993-09-14 |
Northeastern University |
Micro-emitter-based low-contact-force interconnection device
|
US5220725A
(en)
*
|
1991-04-09 |
1993-06-22 |
Northeastern University |
Micro-emitter-based low-contact-force interconnection device
|
US5660570A
(en)
*
|
1991-04-09 |
1997-08-26 |
Northeastern University |
Micro emitter based low contact force interconnection device
|
DE69223088T2
(de)
*
|
1991-06-10 |
1998-03-05 |
Fujitsu Ltd |
Apparat zur Musterüberprüfung und Elektronenstrahlgerät
|
US5557105A
(en)
*
|
1991-06-10 |
1996-09-17 |
Fujitsu Limited |
Pattern inspection apparatus and electron beam apparatus
|
US5211707A
(en)
*
|
1991-07-11 |
1993-05-18 |
Gte Laboratories Incorporated |
Semiconductor metal composite field emission cathodes
|
US5138237A
(en)
*
|
1991-08-20 |
1992-08-11 |
Motorola, Inc. |
Field emission electron device employing a modulatable diamond semiconductor emitter
|
US5399238A
(en)
*
|
1991-11-07 |
1995-03-21 |
Microelectronics And Computer Technology Corporation |
Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
|
US5536193A
(en)
*
|
1991-11-07 |
1996-07-16 |
Microelectronics And Computer Technology Corporation |
Method of making wide band gap field emitter
|
US5199918A
(en)
*
|
1991-11-07 |
1993-04-06 |
Microelectronics And Computer Technology Corporation |
Method of forming field emitter device with diamond emission tips
|
US5397428A
(en)
*
|
1991-12-20 |
1995-03-14 |
The University Of North Carolina At Chapel Hill |
Nucleation enhancement for chemical vapor deposition of diamond
|
JPH05182609A
(ja)
*
|
1991-12-27 |
1993-07-23 |
Sharp Corp |
画像表示装置
|
US5318918A
(en)
*
|
1991-12-31 |
1994-06-07 |
Texas Instruments Incorporated |
Method of making an array of electron emitters
|
US5252833A
(en)
*
|
1992-02-05 |
1993-10-12 |
Motorola, Inc. |
Electron source for depletion mode electron emission apparatus
|
US5229331A
(en)
*
|
1992-02-14 |
1993-07-20 |
Micron Technology, Inc. |
Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
|
US5696028A
(en)
*
|
1992-02-14 |
1997-12-09 |
Micron Technology, Inc. |
Method to form an insulative barrier useful in field emission displays for reducing surface leakage
|
US5653619A
(en)
*
|
1992-03-02 |
1997-08-05 |
Micron Technology, Inc. |
Method to form self-aligned gate structures and focus rings
|
US5371431A
(en)
*
|
1992-03-04 |
1994-12-06 |
Mcnc |
Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions
|
US6127773A
(en)
*
|
1992-03-16 |
2000-10-03 |
Si Diamond Technology, Inc. |
Amorphic diamond film flat field emission cathode
|
US5686791A
(en)
*
|
1992-03-16 |
1997-11-11 |
Microelectronics And Computer Technology Corp. |
Amorphic diamond film flat field emission cathode
|
US5449970A
(en)
*
|
1992-03-16 |
1995-09-12 |
Microelectronics And Computer Technology Corporation |
Diode structure flat panel display
|
US5543684A
(en)
|
1992-03-16 |
1996-08-06 |
Microelectronics And Computer Technology Corporation |
Flat panel display based on diamond thin films
|
US5675216A
(en)
*
|
1992-03-16 |
1997-10-07 |
Microelectronics And Computer Technololgy Corp. |
Amorphic diamond film flat field emission cathode
|
US5374868A
(en)
*
|
1992-09-11 |
1994-12-20 |
Micron Display Technology, Inc. |
Method for formation of a trench accessible cold-cathode field emission device
|
KR960009127B1
(en)
*
|
1993-01-06 |
1996-07-13 |
Samsung Display Devices Co Ltd |
Silicon field emission emitter and the manufacturing method
|
US5584739A
(en)
*
|
1993-02-10 |
1996-12-17 |
Futaba Denshi Kogyo K.K |
Field emission element and process for manufacturing same
|
JP2694889B2
(ja)
*
|
1993-03-10 |
1997-12-24 |
マイクロン・テクノロジー・インコーポレイテッド |
セルフアラインゲート構造および集束リングの形成法
|
JPH08507643A
(ja)
*
|
1993-03-11 |
1996-08-13 |
フェド.コーポレイション |
エミッタ先端構造体及び該エミッタ先端構造体を備える電界放出装置並びにその製造方法
|
US5903098A
(en)
*
|
1993-03-11 |
1999-05-11 |
Fed Corporation |
Field emission display device having multiplicity of through conductive vias and a backside connector
|
US5534743A
(en)
*
|
1993-03-11 |
1996-07-09 |
Fed Corporation |
Field emission display devices, and field emission electron beam source and isolation structure components therefor
|
US5561339A
(en)
*
|
1993-03-11 |
1996-10-01 |
Fed Corporation |
Field emission array magnetic sensor devices
|
JPH07111868B2
(ja)
*
|
1993-04-13 |
1995-11-29 |
日本電気株式会社 |
電界放出冷陰極素子
|
US5564959A
(en)
*
|
1993-09-08 |
1996-10-15 |
Silicon Video Corporation |
Use of charged-particle tracks in fabricating gated electron-emitting devices
|
US5462467A
(en)
*
|
1993-09-08 |
1995-10-31 |
Silicon Video Corporation |
Fabrication of filamentary field-emission device, including self-aligned gate
|
US5559389A
(en)
*
|
1993-09-08 |
1996-09-24 |
Silicon Video Corporation |
Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
|
WO1995012835A1
(en)
*
|
1993-11-04 |
1995-05-11 |
Microelectronics And Computer Technology Corporation |
Methods for fabricating flat panel display systems and components
|
US5445550A
(en)
*
|
1993-12-22 |
1995-08-29 |
Xie; Chenggang |
Lateral field emitter device and method of manufacturing same
|
US5583393A
(en)
*
|
1994-03-24 |
1996-12-10 |
Fed Corporation |
Selectively shaped field emission electron beam source, and phosphor array for use therewith
|
US5608283A
(en)
*
|
1994-06-29 |
1997-03-04 |
Candescent Technologies Corporation |
Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
|
US5607335A
(en)
*
|
1994-06-29 |
1997-03-04 |
Silicon Video Corporation |
Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material
|
US5629583A
(en)
*
|
1994-07-25 |
1997-05-13 |
Fed Corporation |
Flat panel display assembly comprising photoformed spacer structure, and method of making the same
|
EP0776493A4
(en)
*
|
1994-08-15 |
1999-01-07 |
Fed Corp |
COMPACT BODY FIELD EMISSION DISPLAY DEVICE AND DISPLAY PANEL TO BE USED THEREFORE
|
US5496200A
(en)
*
|
1994-09-14 |
1996-03-05 |
United Microelectronics Corporation |
Sealed vacuum electronic devices
|
KR100366694B1
(ko)
*
|
1995-03-28 |
2003-03-12 |
삼성에스디아이 주식회사 |
다중팁전계방출소자의그제조방법
|
US5621272A
(en)
*
|
1995-05-30 |
1997-04-15 |
Texas Instruments Incorporated |
Field emission device with over-etched gate dielectric
|
US5589728A
(en)
*
|
1995-05-30 |
1996-12-31 |
Texas Instruments Incorporated |
Field emission device with lattice vacancy post-supported gate
|
US5828288A
(en)
*
|
1995-08-24 |
1998-10-27 |
Fed Corporation |
Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
|
US5688158A
(en)
*
|
1995-08-24 |
1997-11-18 |
Fed Corporation |
Planarizing process for field emitter displays and other electron source applications
|
US5844351A
(en)
*
|
1995-08-24 |
1998-12-01 |
Fed Corporation |
Field emitter device, and veil process for THR fabrication thereof
|
US5632664A
(en)
*
|
1995-09-28 |
1997-05-27 |
Texas Instruments Incorporated |
Field emission device cathode and method of fabrication
|
US5693235A
(en)
*
|
1995-12-04 |
1997-12-02 |
Industrial Technology Research Institute |
Methods for manufacturing cold cathode arrays
|
US5727978A
(en)
*
|
1995-12-19 |
1998-03-17 |
Advanced Micro Devices, Inc. |
Method of forming electron beam emitting tungsten filament
|
US5766446A
(en)
*
|
1996-03-05 |
1998-06-16 |
Candescent Technologies Corporation |
Electrochemical removal of material, particularly excess emitter material in electron-emitting device
|
US5893967A
(en)
*
|
1996-03-05 |
1999-04-13 |
Candescent Technologies Corporation |
Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
|
US5865659A
(en)
*
|
1996-06-07 |
1999-02-02 |
Candescent Technologies Corporation |
Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
|
US5865657A
(en)
*
|
1996-06-07 |
1999-02-02 |
Candescent Technologies Corporation |
Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
|
US5755944A
(en)
*
|
1996-06-07 |
1998-05-26 |
Candescent Technologies Corporation |
Formation of layer having openings produced by utilizing particles deposited under influence of electric field
|
US6187603B1
(en)
|
1996-06-07 |
2001-02-13 |
Candescent Technologies Corporation |
Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
|
US6022256A
(en)
*
|
1996-11-06 |
2000-02-08 |
Micron Display Technology, Inc. |
Field emission display and method of making same
|
US5780960A
(en)
*
|
1996-12-18 |
1998-07-14 |
Texas Instruments Incorporated |
Micro-machined field emission microtips
|
US5828163A
(en)
*
|
1997-01-13 |
1998-10-27 |
Fed Corporation |
Field emitter device with a current limiter structure
|
US6120674A
(en)
*
|
1997-06-30 |
2000-09-19 |
Candescent Technologies Corporation |
Electrochemical removal of material in electron-emitting device
|
US6010918A
(en)
*
|
1998-02-10 |
2000-01-04 |
Fed Corporation |
Gate electrode structure for field emission devices and method of making
|
JP3553791B2
(ja)
*
|
1998-04-03 |
2004-08-11 |
株式会社ルネサステクノロジ |
接続装置およびその製造方法、検査装置並びに半導体素子の製造方法
|
US6391670B1
(en)
|
1999-04-29 |
2002-05-21 |
Micron Technology, Inc. |
Method of forming a self-aligned field extraction grid
|
US6566804B1
(en)
*
|
1999-09-07 |
2003-05-20 |
Motorola, Inc. |
Field emission device and method of operation
|
FR2818797B1
(fr)
*
|
2000-12-22 |
2003-06-06 |
Pixtech Sa |
Procede de fabrication d'une cathode a grille d'extraction et grille de focalisation alignees
|
US6833232B2
(en)
|
2001-12-20 |
2004-12-21 |
Dongbu Electronics Co., Ltd. |
Micro-pattern forming method for semiconductor device
|
US6963160B2
(en)
|
2001-12-26 |
2005-11-08 |
Trepton Research Group, Inc. |
Gated electron emitter having supported gate
|
US8048789B2
(en)
*
|
2005-04-26 |
2011-11-01 |
Northwestern University |
Mesoscale pyramids, arrays and methods of preparation
|
US11948769B2
(en)
*
|
2022-01-12 |
2024-04-02 |
Applied Physics Technologies, Inc. |
Monolithic heater for thermionic electron cathode
|