NL7010208A - - Google Patents
Info
- Publication number
- NL7010208A NL7010208A NL7010208A NL7010208A NL7010208A NL 7010208 A NL7010208 A NL 7010208A NL 7010208 A NL7010208 A NL 7010208A NL 7010208 A NL7010208 A NL 7010208A NL 7010208 A NL7010208 A NL 7010208A
- Authority
- NL
- Netherlands
Links
Classifications
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- H10P14/61—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
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- H10W10/00—
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- H10W10/01—
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- H10W10/012—
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- H10W10/0121—
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- H10W10/0126—
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- H10W10/13—
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- H10W15/00—
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- H10W15/01—
Priority Applications (34)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7010208A NL7010208A (cg-RX-API-DMAC10.html) | 1966-10-05 | 1970-07-10 | |
| CA117451A CA933675A (en) | 1970-07-10 | 1971-07-06 | Method of manufacturing a semiconductor device and semiconductor device obtained by using the method |
| CA117580A CA926029A (en) | 1970-07-10 | 1971-07-07 | Semiconductor device having a transistor |
| GB3184571A GB1353997A (en) | 1970-07-10 | 1971-07-07 | Semiconductor integrated devices |
| SE7108803A SE383581B (sv) | 1970-07-10 | 1971-07-07 | Forfarande for framstellning av en halvledaranordning |
| CH1001271A CH539949A (de) | 1970-07-10 | 1971-07-07 | Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung |
| GB3184371A GB1363515A (en) | 1970-07-10 | 1971-07-07 | Manufacture of semiconductor devices |
| GB186774A GB1365281A (en) | 1970-07-10 | 1971-07-07 | Manufacture of semiconductor devices |
| SE08804/71A SE368479B (cg-RX-API-DMAC10.html) | 1970-07-10 | 1971-07-07 | |
| CA117,581A CA1102012A (en) | 1970-07-10 | 1971-07-07 | Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same |
| SE08805/71A SE368480B (cg-RX-API-DMAC10.html) | 1970-07-10 | 1971-07-07 | |
| CH1000771A CH533364A (de) | 1970-07-10 | 1971-07-07 | Monolitische, intergrierte Schaltung |
| CH1001371A CH542517A (de) | 1970-07-10 | 1971-07-07 | Halbleitervorrichtung mit einem Transistor und Verfahren zur Herstellung der Halbleitervorrichtung |
| ES393040A ES393040A1 (es) | 1970-07-10 | 1971-07-08 | Un dispositivo semiconductor. |
| DE2133982A DE2133982C2 (de) | 1970-07-10 | 1971-07-08 | Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung |
| BE769735A BE769735A (fr) | 1970-07-10 | 1971-07-08 | Dispositif semiconducteur, en particulier circuit monolithique integre,et procede de fabrication de ce dispositif |
| ES393041A ES393041A1 (es) | 1970-07-10 | 1971-07-08 | Un dispositivo semiconductor. |
| BE769733A BE769733R (fr) | 1970-07-10 | 1971-07-08 | Dispositif semiconducteur et procede pour sa |
| ES393039A ES393039A2 (es) | 1970-07-10 | 1971-07-08 | Un metodo de fabricar un dispositivo semiconductor. |
| DE2133980A DE2133980C3 (de) | 1966-10-05 | 1971-07-08 | Verfahren zur Herstellung einer integrierten Halbleiterschaltung |
| AT594171A AT344788B (de) | 1970-07-10 | 1971-07-08 | Verfahren zur herstellung einer integrierten monolithischen halbleiteranordnung |
| BE769734A BE769734A (fr) | 1970-07-10 | 1971-07-08 | Dispositif semiconducteur comportant un transistor |
| DE19712133981 DE2133981C3 (de) | 1970-07-10 | 1971-07-08 | Halbleiterbauelement mit einem Halbleiterkörper mit einem Transistor und Verfahren zu seiner Herstellung |
| FR7125299A FR2098325B1 (cg-RX-API-DMAC10.html) | 1970-07-10 | 1971-07-09 | |
| IT26784/71A IT995017B (it) | 1970-07-10 | 1971-07-09 | Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodo |
| FR7125298A FR2098324B1 (cg-RX-API-DMAC10.html) | 1970-07-10 | 1971-07-09 | |
| FR7125297A FR2098323B2 (cg-RX-API-DMAC10.html) | 1966-10-05 | 1971-07-09 | |
| JP46050731A JPS517550B1 (cg-RX-API-DMAC10.html) | 1970-07-10 | 1971-07-10 | |
| JP46050732A JPS5010101B1 (cg-RX-API-DMAC10.html) | 1970-07-10 | 1971-07-10 | |
| JP50141236A JPS522273B2 (cg-RX-API-DMAC10.html) | 1970-07-10 | 1975-11-27 | |
| HK592/76*UA HK59276A (en) | 1970-07-10 | 1976-09-23 | Manufacture of semiconductor device |
| HK585/76*UA HK58576A (en) | 1970-07-10 | 1976-09-23 | Improvements in and relating to semiconductor integrated devices |
| HK595/76*UA HK59576A (en) | 1970-07-10 | 1976-09-23 | Manufacture of semiconductor devices |
| NLAANVRAGE8002038,A NL176414C (nl) | 1970-07-10 | 1980-04-08 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL666614016A NL153374B (nl) | 1966-10-05 | 1966-10-05 | Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
| NL7002384.A NL159817B (nl) | 1966-10-05 | 1970-02-19 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| NL7010208A NL7010208A (cg-RX-API-DMAC10.html) | 1966-10-05 | 1970-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7010208A true NL7010208A (cg-RX-API-DMAC10.html) | 1972-01-12 |
Family
ID=27351385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7010208A NL7010208A (cg-RX-API-DMAC10.html) | 1966-10-05 | 1970-07-10 |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2133980C3 (cg-RX-API-DMAC10.html) |
| NL (1) | NL7010208A (cg-RX-API-DMAC10.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3886000A (en) * | 1973-11-05 | 1975-05-27 | Ibm | Method for controlling dielectric isolation of a semiconductor device |
| FR2252638B1 (cg-RX-API-DMAC10.html) * | 1973-11-23 | 1978-08-04 | Commissariat Energie Atomique | |
| FR2341201A1 (fr) * | 1976-02-16 | 1977-09-09 | Radiotechnique Compelec | Procede d'isolement entre regions d'un dispositif semiconducteur et dispositif ainsi obtenu |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
| US3442011A (en) * | 1965-06-30 | 1969-05-06 | Texas Instruments Inc | Method for isolating individual devices in an integrated circuit monolithic bar |
| NL153374B (nl) * | 1966-10-05 | 1977-05-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
| US3488564A (en) * | 1968-04-01 | 1970-01-06 | Fairchild Camera Instr Co | Planar epitaxial resistors |
| US3649386A (en) * | 1968-04-23 | 1972-03-14 | Bell Telephone Labor Inc | Method of fabricating semiconductor devices |
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1970
- 1970-07-10 NL NL7010208A patent/NL7010208A/xx unknown
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1971
- 1971-07-08 DE DE2133980A patent/DE2133980C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2133980C3 (de) | 1983-12-22 |
| DE2133980B2 (de) | 1979-07-05 |
| DE2133980A1 (de) | 1972-01-13 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BN | A decision not to publish the application has become irrevocable |