Classifications

• • H10P14/61—
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
  • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
  • H10D84/401—Combinations of FETs or IGBTs with BJTs
  • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
• • H10W10/00—
• • H10W10/01—
• • H10W10/012—
• • H10W10/0121—
• • H10W10/0126—
• • H10W10/13—
• • H10W15/00—
• • H10W15/01—

Applications Claiming Priority (3)

Publications (1)

Family

ID=27351584

Family Applications (1)

Country Status (9)

Family Cites Families (1)

• 1971
  • 1971-07-07 CH CH1000771A patent/CH533364A/de not_active IP Right Cessation
  • 1971-07-07 GB GB3184571A patent/GB1353997A/en not_active Expired
  • 1971-07-07 CA CA117,581A patent/CA1102012A/en not_active Expired
  • 1971-07-07 SE SE08805/71A patent/SE368480B/xx unknown
  • 1971-07-08 ES ES393040A patent/ES393040A1/es not_active Expired
  • 1971-07-08 DE DE2133982A patent/DE2133982C2/de not_active Expired
  • 1971-07-08 ES ES393041A patent/ES393041A1/es not_active Expired
  • 1971-07-08 BE BE769735A patent/BE769735A/xx unknown
  • 1971-07-10 JP JP46050731A patent/JPS517550B1/ja active Pending
• 1976
  • 1976-09-23 HK HK585/76*UA patent/HK58576A/xx unknown

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